Behavior of copper in gallium arsenide with a high tellurium concentration

The electrophysical properties and cathode luminescence spectra of gallium arsenide with a high tellurium concentration (n = 2·10¹⁸ cm^–3) alloyed with copper are investigated under different diffusion conditions. Centers are determined from measurements of the Hall effect with an ionization energy of 0.190 ± 0.006 eV whose concentration does not depend on the arsenic vapor pressure (0.1 and 1 atm) and the cooling rate of the samples from the diffusion temperature. A band with h_m = 1.30–1.32 eV whose intensity depends on the cooling conditions of the samples was observed in the cathode luminescence spectra of these samples. The nature of the observed defects is discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 93–99, July, 1979.In conclusion of this article the authors express their gratitude to L. K. Tarasova for preparation of the samples.     

Transformations of [Au(CN)2]− at the contact with activated carbon surface

We have studied the processes occurring when alkaline aqueous solution of Na[Au(CN)₂] is brought in contact with activated carbon surface. It has been shown that the adsorption of the gold cyanide complex occurs via several independent routes, one of them being accompanied with the partial breakdown of the inner sphere of the compound and free cyanide ions release into the solution. The latter process decreases the gold recovery by aqueous NaOH during the high-temperature (150°C) desorption. A prolonged storage of the adsorbent saturated with [Au(CN)₂]^? in air produces a similar result. The reasons of the observed phenomena have been discussed.     

Investigation of the electrophysical and photoelectric properties of diffused layers of gallium arsenide obtained by compensation of copper

The distribution of the electrophysical and photoelectric properties of diffuse layers of p-GaAs obtained by doping copper using different diffusion modes is investigated. The properties of diffuse layers of p — n structures and volume specimens doped with copper over the whole depth are compared. The behavior of impurity centers is studied in these specimens and their effect on the electrophysical and photoelectric parameters of the material is investigated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 95–100, October, 1977.In conclusion we thank I. V. Kamenskii for carrying out the experiments.     

Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

A study is made of the influence of the conditions of ion implantation (T_p, D) and subsequent heat treatment (T_ann, t_ann) on the implantation efficiency and the electrical properties of ion-doped films obtained by implanting Cd⁺ ions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 40–44, January, 1981.     

Planar detectors for multielement systems of millimeter-wave imaging

We discuss the concept of developing a millimeter-wave multielement matrix receiver on the basis of planar antennas with directly coupled low-barrier Schottky diodes. Three main problems are considered which involve choosing and developing a design of the planar antenna coupled with the low-barrier Schottky diode, optimizing the parameters of the low-barrier Schottky diodes for obtaining maximum sensitivity, and ensuring compact arrangement with weak mutual influence of the planar detectors in a two-dimensional array. We propose a design of the slot antenna with an active resistance of about 800 Ω at a resonant frequency of 94 GHz. The detection characteristics of diodes with the differential Schottky-barrier resistance in the range R_j = 0.4–1000 kΩ for a zero bias are studied experimentally. The mutual influence of the neighboring antennas is examined for developing the multielement radio-imaging system. The conditions of weak cross influence of the closely located planar detectors are determined. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 50, No. 12, pp. 1077–1087, December 2007.     

Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities

The temperature dependence of the charge carrier concentration and mobility in n-type GaAs monocrystals doped jointly by Ge and isovalent In and Sb impurities is investigated. The observable charge carrier concentration and mobility changes in the GaAs:Ge:In and GaAs:Ge:Sb are compared with the corresponding characteristics in GaAs:Ge, and the change in properties along the ingots can be explained by the Ge impurity redistribution in the gallium and arsenic sublattices in the presence of an isovalent impurity.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 3–8, September, 1987.