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1.
The mass spectra of O-methyloximes of fifteen aliphatic aldehydes and ketones of various molecular weights and degrees of branching have been examined. All give molecular ions, and many of the fragmentations parallel those of aldoximes and ketoximes. The formation of some ions is better explained by the initial production of a novel substituted cyclopropene ion. O-Methyloximes of of the long-chain aldehydes and methyl ketones are readily distinguished by the masses of abundant products of McLafferty rearrangement at m/e 73 and 87, repectively.  相似文献   
2.
In this paper we outline two recent results which demonstrate the utility of deep-level engineering in silicon photonics. We describe the integration of silicon waveguide p-i-n photo-detectors in a ring (or race-track) resonator structure. The detectors are made sensitive to wavelengths around 1,550?nm via the introduction of deep-levels into the intrinsic volume of the waveguide detector. By exploiting the multiple-pass of the optical signal through the detector, we are able to significantly decrease the size of the detector structure (relative to straight waveguide detectors) while maintaining excellent responsivity on resonance. We also describe the use of deep-levels for optical modulation. Preliminary results show that thallium doped silicon waveguides may be switched between a dark and transparent condition through the variation of phosphorus doping. It is suggested that active devices may be fabricated in such a way as to vary the occupancy of the thallium level through field mediated modulation. The straightforward fabrication methods described lend themselves to a high-volume, high yield manufacturing process which should find general applicability in wavelength division multiplexing systems.  相似文献   
3.
A new polymer-supported chromium porphyrin has been prepared and fully characterised; its catalytic activity and recyclability were investigated for the ring-opening copolymerisation of 1,2-cyclohexene oxide (CHO) and carbon dioxide (CO2).  相似文献   
4.
Graphene and nitrogen doped graphene have been prepared by modified Hummers’ method and the following ammonia heat-treatment process, respectively. The effects of N-doping on the structure of graphene have been systematically investigated by various characterization techniques. SEM, TEM, BET, Raman and XRD analysis were used to distinguish the difference of the microstructures; and FT-IR, XPS, especially XANES were performed to elucidate the bonding information such as C-N. The effect of nitrogen doping on the structure of graphene has been obtained. More defects are present on nitrogen doped graphene as elucidated by BET, XRD, Raman, and XANES characterizations. XANES analysis also indicates that the N-doping decreases the surface oxygen-containing groups.  相似文献   
5.
We report the first observations of optically induced electron spin resonance signals in doped and undoped amorphous silicon. We also report the observation of equilibrium surface or interface spin densities ~ 1013cm?2 and volume spin densities ~ 6 × 1015 cm?3. The small number of spins observed in equilibrium compared to the large optically induced spin density shows that most electrons are spin paired in equilibrium. We conclude that this implies a very small mean effective correlation energy, UkT.  相似文献   
6.
A model is proposed to explain the outstanding features of the free-carrier photogeneration process in amorphous selenium. The excitation of an electron-hole pair and the subsequent separation or recombination are considered as a function of photon energy, applied electric field and temperature. The results of the model are compared in detail with new experimental data and also with published results from a number of sources.  相似文献   
7.
The rates of ozonolysis of four sesquiterpenes, β-caryophyllene, α-humulene, isolongifolene and α-cedrene, are determined in the gas phase at an elevated temperature of 366 ± 3 K and a pressure of ~780 Torr using the EXTreme RAnge chamber (EXTRA). The experimentally obtained rate coefficients agree with extrapolated room temperature rate coefficients for isolongifolene and α-cedrene but not for β-caryophyllene and α-humulene, which were found to be three orders of magnitude slower than this in the literature. These new measurements support the hypothesis that operating under ambient conditions, kinetic measurements of condensable species can be influenced adversely by heterogeneous processes and should therefore be treated with caution.  相似文献   
8.
Electrochemical stabilities of Pt deposited on carbon nanotubes (CNTs) and nitrogen-doped carbon nanotubes (CNx) of different nitrogen contents are compared with accelerated durability tests (ADT) for the first time. Transmission electron microscopy (TEM) images reveal the different structures of CNTs and CNx, and the decrease of Pt particle size with the nitrogen incorporation into CNTs. Based on the loss of electrochemical surface area (ESA) and TEM images, Pt/CNx exhibited much higher stability than Pt/CNTs, and the Pt stability increases with the increase of nitrogen contents in the CNx supports.  相似文献   
9.
The ability of 2'-alpha-C-carboxyalkyl nucleosides to undergo an unusual two-step stereocontrolled nucleobase exchange process has been investigated. Upon silylation a protected 2'-deoxy-2'-alpha-C-(carboxymethyl)uridine derivative can undergo intramolecular displacement of the uracil base, by the 2'-carboxylic acid group, to form a pentofuranosyl gamma-lactone. Under identical conditions the homologous 2'-deoxy-2'-alpha-C-(carboxyethyl)uridine derivative does not yield the corresponding delta-lactone, but undergoes elimination of uracil to give the corresponding glycal. The pentofuranosyl gamma-lactone is a good substrate for nucleoside synthesis by the Vorbrüggen procedures and undergoes completely stereoselective ring opening with either pyrimidine or purine silylated nucleobases to give novel 2'-C-carboxymethyl beta-nucleosides in moderate to high yield.  相似文献   
10.
Although glow discharge decomposition of SiH4 has been demonstrated to yield a-Si:H films with potential for large area device applications, the a-Si:H films often have high impurity level (~ 1019t- 1020/cc). Moreover, cross contamination of dopants at interfaces between differently doped layers is a problem. Since both issues may be the key to improving material quality, a UHV plasma deposition systems has been built to address them. By controlling all sources of contaminants such as chamber walls, gas lines and gas bottles, the impurity levels have been significantly lowered to ~1017?1018/cc. In addition, sharp interfaces between differently doped layers are obtained, which allow the preparation of multilayer structures.  相似文献   
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