Photocatalytic hydrogen evolution and Rifampicinum destruction over carbon-modified TiO2

Research on Chemical Intermediates - Carbon-modified TiO2 using a sol–gel method (TiO2/CSG) and mechanochemical treatment (TiO2/CMC) was obtained. X-ray powder diffraction (XRD), scanning...     

Effect of Production Conditions of Hierarchical SnAl-BEA Zeolites on Their Acidity and Catalytic Activity in Tandem Process for the Production of 4-Methoxybenzyl-sec-Butyl Ether

Theoretical and Experimental Chemistry - Hierarchical SnAl-silicate zeolites of the BEA structural type with Lewis (up to 130 μmol/g) and Brønsted (up to 330 μmol/g) acid sites, the...     

Electronic structure of Ti<Subscript>4</Subscript>Fe<Subscript>2</Subscript>O as determined from <Emphasis Type="Italic">ab initio</Emphasis> calculations and X-ray spectroscopy studies

The TiL _α, FeL _α and OK _α ultrasoft X-ray emission bands obtained in experiment reflect, respectively, the energy distribution of mainly the Ti3d, Fe3d and O2p electronic states in Ti₄Fe₂O compound, which is an efficient hydrogen absorber for energy cells. Full and partial densities of electronic states for all atoms constituting the indicated oxide were calculated by a modified method of associated plane waves (APW) using the WIEN2k software package. The APW calculation data for Ti₄Fe₂O compound as well as superposition of TiL _α, FeL _α and OK _α ultrasoft X-ray emission bands on a single energy scale indicate that O2p states in the oxide are localized mainly near the bottom of the valence band, the major contribution near the ceiling of the valence band belonging to Fe3d and Ti3d states. According to the APW calculation, the major contribution to the bottom of Ti₄Fe₂O conduction band is made by Fe3d* and Ti3d* states. The APW data for Ti₄Fe₂O are supported by the cluster calculation performed for this compound using a FEFF82 software package.     

Interfacial oxidation of ultrathin nickel and chromium films on yttria-stabilized zirconia

The substrate-induced oxidation upon prolonged annealing in UHV of ultrathin films of Ni and Cr vapor deposited on yttria-stabilized zirconia YSZ(100) was studied by X-ray photoelectron spectroscopy (XPS) to obtain information about the oxidation mechanism, determine the available quantity of reactive oxygen in YSZ, and investigate the thermal stability of the thin oxide films. Up to about 0.8 ML of Ni deposited at room temperature was oxidized to NiO at a constant rate at 650 K via the substrate, whereas at slightly higher coverage, the oxidation rate under identical conditions was drastically reduced. In contrast to Ni, up to 4.8 ML of Cr deposited at 275 K could be oxidized via the substrate to Cr2O3 upon extensive UHV annealing at increasing temperature up to 820 K, indicating a reactive oxygen content of at least 4 x 10(-6) with respect to the lattice oxygen in the YSZ specimen. The Cr2O3 decomposed to metallic Cr above about 800 K, whereas NiO was stable up to the maximum temperature of 875 K. These results indicate that the oxidation via the substrate is kinetically analogous to the gas-phase oxidation of bulk Ni and Cr. The reactive oxygen content of the single-crystal YSZ is larger than expected, and part of it is accommodated at the surface of the substrate. The thermal stability of the thin oxide films is determined by the oxygen exchange with YSZ and not by the respective bulk oxide thermodynamic decomposition temperature.     

First-principles FP-LAPW calculations and X-ray spectroscopy studies of the electronic structure of Zr3V3O and Zr3V3O0.6 oxides

Electronic properties of Zr₃V₃O oxide, a very promising hydrogen-storage material, were studied both from theoretical and experimental points of view employing the full potential linearized augmented plane wave (FP-LAPW) method as well as X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). Total and partial densities of states of the constituting atoms of Zr₃V₃O have been derived from the FP-LAPW calculations. These data indicate that, the O 2p-like states are the dominant contributors in the bottom of the valence band, whilst the top of the valence band and the bottom of the conduction band of Zr₃V₃O are dominated by contributions of the V2 3d-like states, with slightly smaller contributions of the V1 3d-like states as well. Significant contributions of the Zr 4d-like states throughout the whole valence-band region and near the bottom of the conduction band are also characteristic of the electronic structure of Zr₃V₃O. The XPS valence-band spectra and the XES Zr Lβ_2,15, V L_α and O K_α bands have been derived and compared on a common energy scale for Zr₃V₃O and Zr₃V₃O_0.6 oxides. This comparison of the experimental spectra was found to be in excellent agreement with the results of the FP-LAPW calculations. In addition, the XPS Zr 3d, V 2p and O 1s core-level binding energies have been measured for Zr₃V₃O and Zr₃V₃O_0.6 oxides.     

Electronic structure of ZrTiO4 and HfTiO4: Self-consistent cluster calculations and X-ray spectroscopy studies

Total and partial densities of states of the constituent atoms of ZrTiO₄ and HfTiO₄ titanates have been calculated using a self-consistent cluster method as incorporated in the FEFF8 code. The calculations reveal the similarity of the electronic structure of both titanates and indicate that the valence band of the compounds under consideration is dominated by contributions of O 2p states. These states contribute throughout the whole valence-band region; however their maximum contributions occur in the upper portion of the band. Other significant contributors in the valence-band region are Ti 3d and Zr 4d states in ZrTiO₄ and Ti 3d and Hf 5d states in HfTiO₄. All the above d-like states contribute throughout the whole valence-band region of the titanates; however maximum contributions of the Ti 3d states occur in the upper portion, whilst those of the Zr 4d (Hf 5d) states are in the central portions of the valence band. The FEFF8 calculations render that the bottom of the conduction band of ZrTiO₄ and HfTiO₄ is dominated by contributions of Ti 3d^? states, with also smaller contributions of Zr 4d^?/Hf 5d^? and O 2p^? states. To verify the above FEFF8 data, the X-ray emission bands, representing the energy distributions of mainly O 2p, Ti 3d and Zr 4d states, were measured and compared on a common energy scale. These experimental data are found to be in agreement with the theoretical FEFF8 results for the electronic structure of ZrTiO₄ and HfTiO₄ titanates. Additionally, X-ray photoelectron valence-band and core-level spectra were recorded for the constituent atoms of the titanates under study.     

Electronic structure and fundamental absorption edges of KPb2Br5, K0.5Rb0.5Pb2Br5, and RbPb2Br5 single crystals

X-ray photoelectron core-level and valence-band spectra for pristine and Ar⁺-ion irradiated (001) surfaces of KPb₂Br₅, K_0.5Rb_0.5Pb₂Br₅, and RbPb₂Br₅ single crystals grown by the Bridgman method have been measured and fundamental absorption edges of the ternary bromides have been recorded in the polarized light at 300 K and 80 K. The present X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of (001) surfaces of K_xRb_1?xPb₂Br₅ (x=0, 0.5, and 1.0) single crystals. Substitution of potassium for rubidium in K_xRb_1?xPb₂Br₅ does not cause any changes of binding energy values and shapes of the XPS constituent element core-level spectra. Measurements of the fundamental absorption edges indicate that band gap energy, E_g, increases by about 0.14 and 0.19 eV when temperature decreases from 300 K to 80 K in KPb₂Br₅ and RbPb₂Br₅, respectively. Furthermore, there is no dependence of the E_g value for KPb₂Br₅ upon the light polarization, whilst the band gap energy value for RbPb₂Br₅ is bigger by 0.03–0.05 eV in the case of E6c compared to those in the cases of E6a and E6b.     

Electron energy structure of defect chalcopyrite CdGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>

The CdGa₂Se₄ compound, with a crystalline lattice of defect chalcopyrite, shows birefringence. However, in contrast to the similar CdGa₂S₄ compound, CdGa₂Se₄ has no experimentally observed isotropic points in the optical spectral range. In this study, the electron energy structure and optical spectra of CdGa₂Se₄ are calculated for three different experimentally obtained sets of crystalline parameters. Only one of these sets shows the absence of isotropic points.