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Al-doped n-ZnO/p-Si heterojunctions were fabricated using a sol–gel dip coating technique at 700 °C, in a nitrogen ambient.
The structural, optical, and electrical properties of ZnO:Al thin films, and the heterojunction properties of ZnO:Al/p-Si
were investigated with respect to the effects of Al doping concentration. Hexagonal nano-structured ZnO: Al thin films with
a 1.2% and a 1.6 at.% Al concentration exhibited high optical transmittance in visible ranges. Electrical resistivity changed
with respect to Al doping concentration, and minimum resistivity was detected at a 1.2 at.% Al concentration. The ZnO:Al/p-Si
heterojunction properties were analysed using current–voltage (I–V) measurements at four different Al concentrations, ranging
from 0.8 to 1.6 (at.%). The ZnO:Al/p-Si heterojunctions exhibited diode-like rectifying behaviour. Under UV illumination,
the photoelectric behaviour observed for the ZnO:Al/p-Si heterojunctions was diode. 相似文献
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