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In this study a novel technique for 2D spray temperature measurement is presented. For this purpose the thermographic phosphor (TP) Mg4GeO5.5F:Mn was dispersed in n-dodecane and atomised using a conventional semi solid-cone nozzle. The thermographic phosphor was excited electronically by a frequency tripled Nd:YAG laser (355 nm). An ICCD-camera in combination with an image doubler detected the subsequently emitted phosphorescence at both peak emission wavelengths located at 633 nm and 659 nm, respectively. Utilising suitable calibration measurements, the local spray temperature was determined by evaluating the intensity ratio of both emission wavelengths. To the knowledge of the authors this is the first approach of spray temperature measurement exploiting the temperature dependent intensity ratio of thermographic phosphors. PACS 07.20.Dt; 32.50.+d  相似文献   
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In Part I of this study, we suggest to identify an operations research (OR) problem with the equivalence class of models describing the problem and enhance the standard computer-science theory of computational complexity to be applicable to this situation of an often model-based OR context. The Discrete Lot-sizing and Scheduling Problem (DLSP) is analysed here in detail to demonstrate the difficulties which can arise if these aspects are neglected and to illustrate the new theoretical concept. In addition, a new minimal model is introduced for the DLSP which makes this problem eventually amenable to a rigorous analysis of its computational complexity.  相似文献   
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Let Top 0 be the category of topological T 0-spaces, QU 0 the category of quasi-uniform T 0-spaces, T : QU 0 Top 0 the usual forgetful functor and K : QU 0 QU 0 the bicompletion reflector with unit k : 1 → K. Any T-section F : Top 0 QU 0 is called K-true if KF = FTKF, and upper (lower) K-true if KF is finer (coarser) than FTKF. The literature considers important T-sections F that enjoy all three, or just one, or none of these properties. It is known that T(K,k)F is well-pointed if and only if F is upper K-true. We prove the surprising fact that T(K,k)F is the reflection to Fix(TkF) whenever it is idempotent. We also prove a new characterization of upper K-trueness. We construct examples to set apart some natural cases. In particular we present an upper K-true F for which T(K,k)F is not idempotent, and a K-true F for which the coarsest associated T-preserving coreflector in QU 0 is not stable under K. We dedicate this paper to the memory of Sérgio de Ornelas Salbany (1941–2005).  相似文献   
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In this paper the effects of surface roughness and annealing temperature (T) of latex coating films on adhesion are discussed for the different stages of the film formation process. The surface free energy of latex films was assessed in terms of practical work of adhesion (W) (or adherence) using a custom-built adhesion-testing device (ATD), atomic force microscopy (AFM), and contact angle measurements. For preannealed latex films surface roughness averages (Ra) were determined from AFM height images and were related to the values of W obtained from ATD measurements at room temperature. The results obtained using these tests exhibiting surface behavior on different length scales indicate a dependence of the measured adhesion on surface roughness and temperature, as well as on the length scale of the measurements.First preannealed samples were studied, which were obtained by heat treatment above the respective glass transition temperatures (Tg). Increasing the temperature of preannealing resulted in a decrease of the adherence observed in ATD experiments at room temperature. However, on the nanoscale, using AFM, no significant variation of the adherence was observed. This observation can be explained by roughness arguments. Preannealing decreases roughness which results in lower adherence values measured by ATD while for essentially single asperity AFM experiments roughness has an insignificant effect. Specimens were also annealed over a constant period of time (90 min) at different temperatures. At the end of the heat treatment, adhesion was measured at the treatment temperature by ATD. The amplified effect of temperature observed in this case on adherence is attributed to the combination of roughness decrease and increasing test temperature. In a third set of experiments completely annealed samples were studied by ATD as well as by AFM as a function of temperature. With increasing T values ATD showed a decrease in adherence, which is attributed to a decreasing surface free energy of the annealed films at elevated T values. AFM, on the other hand, showed an opposite trend which is assigned to increasing penetration of the tip into the tip/wetting polymer samples versus increasing temperature. Finally, annealing isotherms as a function of time were investigated by ATD in situ at different temperatures. This last set of experiments allowed us to optimize annealing time and temperature to achieve complete curing.  相似文献   
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Fe2O3--V2O5 catalysts doped with Cs2SO4 (molar ratio: V:Fe:Cs=1:0.74:0.06) were found to be a rather inhomogeneous mixture of various crystalline and amorphous iron vanadate phases. After calcination in air the catalyst was divided into three different parts which were analyzed separately revealing the formation of FeVO4 in the top and bottom fraction of the crucible and Fe2V4O13 in the middle fraction. As compared to the well crystallized FeVO4 reference sample, the quadrupole splittings of FeVO4 in the Cs-doped catalysts were larger pointing to more distorted iron sites which were assumed to be responsible for high catalytic selectivities. In contrast, the quadrupole splittings of FeVO4 in the less selective K- and Rb-doped Fe2O3--V2O5 catalysts were smaller. Additional components in the bottom fraction were also α-Fe2O3 and Fe1-xS. As indicated by the CEMS spectra the latter is located preferentially on the surface of the catalyst particles. This revised version was published online in August 2006 with corrections to the Cover Date.  相似文献   
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Positron-lifetime measurements have been used to study the annealing of vacancies in neutron-irradiated GaAs. The vacancies which are interpreted as defects in the Ga sublattice disappear in a single annealing stage (at 500°C in GaAs doped with Si or Zn, and at 600°C in Cr-doped GaAs).  相似文献   
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