表面修饰纳米CdS制备中两个重要影响因素及结构表征

利用溶胶-凝胶法制备了PVP表面修饰的CdS纳米晶粒。考察了影响纳米CdS制备的两个重要因素Cd²⁺/S^2-和PVP,及其作用机理。确证表面过剩S^2-和PVP在反应体系中的作用是在较高浓度下制备纳米CdS的两个重要因素,进一步确定了PVP的最佳用量。通过TEM、ED、XRD、FT-IR等手段对合成的纳米粒子进行了结构表征,最小粒径为7～10nm,闪锌矿构型,粒子大小及形貌可通过改变Cd²⁺/S^2-及反应物浓度来控制。最后给出了CdS/PVP纳米晶粒的结构模型。     

HCN(HNC)与NH3, H2O和HF分子间相互作用的理论研究

在MP2/aug-cc-pVTZ水平上, 对HCN(HNC)与NH3, H2O和HF分子间可能存在的氢键型复合物进行了全自由度能量梯度优化, 通过在相同水平上的频率验证分析发现了稳定的分子间相互作用形式是HCN(HNC)作为质子供体或作为质子受体形成的复合物. 基组重叠误差对总相互作用能的影响均小于3.34 kJ/mol. 通过自然键轨道(NBO)分析, 研究了单体和复合物中的原子电荷和电荷转移对分子间相互作用的影响. 对称性匹配微扰理论(SAPT, Symmetry Adapted Perturbation Theory)能量分解结果表明, 在分子间相互作用中, 静电作用与诱导作用占主导地位, 而诱导作用与复合物的电荷转移之间具有良好的正相关性.     

Theoretical studies on the substitution effect of fluorine on ethylene

The substitution effect of fluorine on ethylene is investigated by means of studyingthe properties of the charge distribution at the bond critical points with the theory of atomsin molecules.It is found that fluorine atom acts not only as a σ electron acceptor,but also asa π electron donor,and these double effects are reflected in the quantity of ellipticity,Lap-lacian and the charge density of charge distribution at the bond critical points.For C—C,C—Fbonds,the major axis of elliptical contours is perpendicular to the molecular plane,but forC—H bond,it is parallel to the molecular plane.Other effects originating from the substi-tution have also been discussed.     

简便合成3,3'-联-1,6-亚甲基桥[10]轮烯

以1,6-二甲酰基环庚三烯为原料通过10π电子环化反应等3步反应制备了3-溴代-1,6-亚甲基桥[10]轮烯, 通过3-溴代-1,6-亚甲基桥[10]轮烯的碱诱导的偶联反应, 简便地合成3,3'-联-1,6-亚甲基桥[10]轮烯, 并用NMR, MS等波谱进行了表征.     

Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates

Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.     

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

ZnO homojunction light-emitting diodes are fabricated on Si（100） substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V. Distinct electrolumineseence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Intense up-conversion emissions of Yb3+/Dy3+ co-doped Al2O3 nanopowders prepared by non-aqueous sol—gel method

Yb³⁺/Dy³⁺ co-doped Al₂O₃ nanopowders have been prepared by the non-aqueous sol-gel method and their up- conversion photoluminescence spectra are measured under excitation by 980-nm semiconductor laser. The results show that there are comparatively abundant spectra of up-conversion emissions centered at 378, 408, 527 and 543, and 663 nm, corresponding to ⁴G_9/2 → ⁶H_13/2, ⁴G_9/2 → ⁶H_11/2, ⁴I_15/2 → ⁶H_13/2, and ⁴F_9/2 → ⁶H_11/2 transitions of Dy³⁺, respectively. Two-photon and three-photon processes are involved in ultraviolet, violet, green, and red up-conversion emissions. The energy transition between Yb³⁺ and Dy³⁺ is discussed.     

薄层色谱法测定二磺化和三磺化 5H-苯基联苯膦氧化物的含量

采用薄层色谱法,对新型化合物5H-苯基联苯磷（PDBP）磺化产物的分离、二磺化和三磺化PDBP氧化物标准品的制备及其定量分析进行了研究。     

聚合物-溶剂-超临界CO_2三元体系的相行为

研究了聚合物－超临界二氧化碳二元体系溶解性,并考查了添加共溶剂对溶解性的影响,结果表明,添加共溶剂会大大提高ＣＯ２的溶解度．此外,还研究了聚合物－溶剂－超临界二氧化碳三元体系在高压时的相行为,探讨了组分性质、含量等对温度 压力相图的影响．随着ＣＯ２含量的增加,压力－温度相图Ｌ－ＬＶ（单一液相向液气两相共存）边界线的斜率会出现突变点,发生由Ｌ－ＬＶ边界线向Ｌ－ＬＬ（单一液相向液液两相共存）边界线的过渡,而Ｌ－ＬＶ边界线对不同聚合物并不敏感．