Effects of composition grading at heterointefaces and layer thickness variations on Bragg mirror quality

GaAs/AlAs Bragg mirrors on GaAs with varied number of layer pairs were grown, by molecular beam epitaxy (MBE), to be applied for semiconductor saturable absorber mirrors (SESAMs) and intensity modulators. Due to the random variation of the growth rate, substrate surface roughness, and interdiffusion at the interfaces, precise control of the growth conditions of deposited layers poses a serious problem. Usually, thickness variations and composition grading at the heterointefaces result in variations of the mirror reflectivity. In this paper, the high resolution X-ray diffraction (HRXRD), optical reflectance, Rutherford backscattering/channelling (RBS), supported by numerical evaluation methods were employed to determine both the exact thickness of each layer and the composition grading at the interface between succeeding layers of GaAs/AlAs-based mirrors. To reduce ambiguity and to speed up the analysis, the rocking curves and RBS spectra were simulated concurrently, using results of one simulation to verify the others. This process was carried out until the best fit between experimental and calculated curves was achieved. The complementary use of both methods results in improved sensitivity and makes the whole process of evaluation of the thickness variation of each layer and the size of the composition grading at the interfaces less time consuming.     

Plasma plume photography and spectroscopy of Fe—Oxide materials

Time-resolved photography was employed to study plasma dynamics and particle ejection of laser-irradiated iron oxide materials. Nano-particle powder, pressed powder pellets and sintered ceramics were ablated in air and Ar gas background by means of short laser pulses (Nd:YAG laser wavelength λ = 1064 nm and pulse duration τ_L ≈ 6 ns; KrF laser λ = 248 nm and τ_L ≈ 20 ns). Plasma plume dynamics significantly depended on sample morphology. The ejection of non-luminous particles up to several hundreds of microseconds after the laser pulse was observed for powder and pressed powder target materials. Laser-induced breakdown spectroscopy (LIBS) was employed for element analysis of iron oxide powders, pressed pellets and sintered ceramics. LIBS spectra of the different targets were comparable to each other and qualitatively independent of target morphology.     

Vacuum ultraviolet laser-induced breakdown spectroscopy analysis of polymers

Laser-induced breakdown spectroscopy (LIBS) in the vacuum ultraviolet range (VUV, λ < 200 nm) is employed for the detection of trace elements in polyethylene (PE) that are difficult to detect in the UV/VIS range. For effective laser ablation of PE, we use a F₂ laser (wavelength λ = 157 nm) with a laser pulse length of 20 ns, a pulse energy up to 50 mJ, and pulse repetition rate of 10 Hz. The optical radiation of the laser-induced plasma is measured by a VUV spectrometer with detection range down to λ = 115 nm. A gated photon-counting system is used to acquire time-resolved spectra. From LIBS measurements of certified polymer reference materials, we obtained a limit of detection (LOD) of 50 µg/g for sulphur and 215 µg/g for zinc, respectively.The VUV LIBS spectra of PE are dominated by strong emission lines of neutral and ionized carbon atoms. From time-resolved measurements of the carbon line intensities, we determine the temporal evolution of the electronic plasma temperature, T_e. For this, we use Saha–Boltzmann plots with the electron density in the plasma, N_e, derived from the broadening of the hydrogen H-α line. With the parameters T_e and N_e, we calculate the intensity ratio of the atomic sulphur and carbon lines at 180.7 nm and at 175.2 nm, respectively. The calculated intensity ratios are in good agreement with the experimentally measured results.     

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

The influence of the growth rate and V/III ratio on the crystal quality of In_0.2GaAs/GaAs quantum well structures was examined. The investigated heterostructures were grown by molecular beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD). Reflection high energy electron diffraction (RHEED), photoluminescence measurements (PL), high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) were applied for evaluation of the interfaces smoothness and the overall layer quality. Comprehensive characterisation of InGaAs/GaAs structures allowed us to establish optimal values of analysed technological parameters. Moreover, the comparison between the results obtained for samples grown by two different epitaxial techniques allowed us to find, which of the analysed growth parameters has the strongest influence on the quality of MBE and MOCVD grown structures. In contrast with the growth temperature and the interruption time, which in different manner impact on the crystal quality of QWs obtained by different method, the growth rate and the V/III ratio play similar role in both epitaxial techniques.     

Possible schemes of photoassociation processes in the KLi molecule with newly calculated potential energy curves

We present four promising schemes for photoassociative formation of KLi molecule in its ground electronic state. Analysis is based on newly calculated adiabatic potentials supported by transition dipole moments and Franck-Condon factors.     

Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

Results of high-pressure directional growth of GaN on foreign substrates: SiC, sapphire and GaN/sapphire MOCVD templates are presented. The role of nitrogen pressure and supersaturation in the growth process is discussed. The conditions for stable growth of the nitride are determined. The results of the crystallization process are compared with those obtained for directional growth on pressure grown GaN crystals.     

Calculation of adiabatic potentials of Li<Subscript>2</Subscript><Superscript>+</Superscript>

We report adiabatic potential energy curves of the Li₂ ⁺ molecule. Our curves are tabulated according to internuclear distance from 2 a₀ to 100 a₀. We compare our theoretical results with the ones calculated by other authors and potential energy curves derived from experiments. For the ground state and 17 excited states we calculate spectroscopic parameters and compare them with parameters obtained by other authors. For the first time we present three new minima for 3²Σ_u ⁺, 4²Σ_u ⁺ and 2²Π_g excited states. In our approach we use the configuration interaction method where only the valence electrons of Li atoms are treated explicitly. The core electrons are represented by pseudopotential. All calculations are performed by means of MOLPRO program package.