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In this work, we have used the MuMax3 software to simulate devices consisting of a ferromagnetic thin film placed over a heavy metal thin film. The devices are two interconnected partial-disks where a Néel domain wall is formed in the disks junction. In our simulations we investigate devices with disk radius r=50 nm and different distance d between the disks centers (from d=12 nm to d=2R=100 nm). By applying strong sinusoidal external magnetic fields, we find a mechanism able to create, annihilate and even manipulate a skyrmion in each side of the device. This mechanism is discussed in terms of interactions between skyrmion and domain wall. The Néel domain wall formed in the center of the device interacts with the Néel skyrmion, leading to a process of transporting a skyrmion from one disk to the other periodically. Our results have relevance for potential applications in spintronics such as logical devices.  相似文献   
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The structure, chemical composition, and magnetic properties of electrochemically deposited nanocrystalline Co-Ni-Fe films were investigated using a number of techniques. A high saturation magnetic induction up to B s = 21 kG was attained. An enhancement of the saturation magnetization compared to the ideal anticipated one was revealed, which correlated with the nonlinear behavior of the structural phase composition and lattice parameters with the change of the composition. The text was submitted by the authors in English.  相似文献   
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Methods for phase stabilization of ammonium nitrate were sought for in order to considerably expand the application area of this oxidizing agent in various-purpose self-combustible formulations, including that in a new generation of gas-generating formulations for automobile air bags. New methods for stabilization of ammonium nitrate were studied and, in particular, a search was made for organic compounds that can stabilize ammonium nitrate even at their low content. The mechanism of phase state stabilization of ammonium nitrate by compounds of this kind was examined.  相似文献   
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Kinetic, sorption and selectivity properties of commercial adsorbents are improved by adding petroleum residues (tar asphaltene concentrates) 13% of whole mass. Obtained adsorbents can be used for selective extraction of nobel metals from multicomponent polymetallic solutions of heavy metals and fro sewages purification for removing arsenic.  相似文献   
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Experimental data on the effect of thallium and sodium impurities on the lattice heat conductivity of PbTe at room temperature are reported. Because the lattice of lead chalcogenides is strongly polarized near charged impurities, the effect of impurities on the lattice heat conductivity depends substantially on their charge state. This property of the material has been used to determine the charge state of the thallium impurity in PbTe. The results obtained argue for a model of quasi-local thallium-impurity states which assumes low electron-correlation energy at an impurity center. Fiz. Tverd. Tela (St. Petersburg) 40, 1206–1208 (July 1998)  相似文献   
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We prove a character formula for any finite-dimensional irreducible representationV of the “queer” Lie superalgebra g=q(n). It expresses chV in terms of the multiplicities of the irreducible g-subquotients of the cohomology groups of certain dominant g-bundles on the Π-symmetric projective spaces (i.e., on the homogeneous superspacesG/P whose reduced space is a projective space, whereG=Q(n)). We also establish recurrent relations for the above multiplicities, and this enables us to compute explicitly chV for any givenV. This provides a complete solution to the Kac character problem for the Lie superalgebraq(n). Finally, we consider the particular cases ofq(2), q(3), andq(4) in which we compare the new character formula with the generic character formula of [12]. Translated from Itogi Nauki i Tekhniki, Seriya Sovremennaya Matematika i Ee Prilozheniya. Tematicheskie Obzory. Vol. 41, Algebraic Geometry-7, 1997.  相似文献   
10.
The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures is discussed. Zh. Tekh. Fiz. 67, 97–99 (December 1997)  相似文献   
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