Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

On equivalence of L p -norms related to Schrödinger type operators on Riemannian manifolds

In this paper, we study Schrödinger type operator on a Riemannian manifold. Under some assumptions on a potential function, we characterize the domain of the square root of the Schrödinger type operator on L ^p space. In the proof, the defective intertwining properties and the Littlewood-Paley inequalities play important roles.     

Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.     

Mass spectrometric studies of alkyl-, phenyl- and chloropyrimidines

The mass spectra of alkyl- and chloropyrimidines are recorded. A generalised fragmentation mechanism for the derivatives of pyrimidine is proposed. The principle of α-cleavage for heterocyclic compounds as proposed in the previous paper is shown to be valid for pyrimidine derivatives. Electronic structures of some molecular and intermediate ions are calculated by the openshell CNDO/2 and INDO methods.