The formation of sub-10 nm nanohole array on block copolymer thin films on gold surface using surface neutralization based on O2 plasma treatment and self-assembled monolayer

Blockcopolymer (BCP) lithography is an emerging nanolithography technique for fabrications of various nanoscale devices and materials. In this study, self-assembled BCP thin films having cylindrical nanoholes were prepared on gold by surface neutralization using self-assembled monolayer (SAM). Oxygen plasma treatment was investigated as a way to enhance the functionality of Au surface toward SAM formation. After surface neutralization, well-ordered nanoholes with 9 to 20 nm diameters were formed inside BCP thin films on Au surfaces through microphase separation. The effects of oxygen plasma treatment on the formation of BCP nanopattern were investigated using surface analysis techniques including X-ray photoelectron spectroscopy (XPS) and water contact angle measurement. Au nanodot arrays were fabricated on gold film by utilizing the BCP nanotemplate and investigated by atomic force microscopy (AFM).     

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)₂, and NH₃ or H₂ or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)₂) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp₂) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).     

Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Dielectric layer containing CoSi₂ nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp₂ and NH₃ plasma mixed with SiH₄ without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi₂ nanocrystal. The gate stack composed of dielectric layer containing CoSi₂ nanocrystals with ALD HfO₂ capping layer together with Ru metal gate was analyzed by capacitance–voltage (C–V) measurement. Large hysteresis of C–V curves indicated charge trap effects of CoSi₂ nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.     

A Conductive Hybridization Matrix of RuO2 Two‐Dimensional Nanosheets: A Hybrid‐Type Photocatalyst

A universal methodology to efficiently improve the photocatalyst performance of semiconductors was developed by employing exfoliated RuO₂ two‐dimensional nanosheets as a conducting hybridization matrix. The hybridization with a RuO₂ nanosheet is easily achieved by crystal growth or electrostatically derived anchoring of semiconductor nanocrystals on the RuO₂ nanosheet. An enhanced chemical interaction of inorganic semiconductor with hydrophilic RuO₂ nanosheet is fairly effective in optimizing their photocatalytic activity and photostability by the enhancement of charge separation and charge mobility. The RuO₂‐containing nanohybrids show much better photocatalyst functionalities than do the graphene‐containing ones. The present study clearly demonstrates that hydrophilic RuO₂ nanosheets are superior hybridization matrices, over the widely used hydrophobic graphene nanosheets, for exploring new efficient hybrid‐type photocatalysts.     

Characterization of wafer-scale MoS2 and WSe2 2D films by spectroscopic ellipsometry

Here, we present the spectroscopic ellipsometry investigation of synthetically grown wafer-scale two-dimensional (2D) MoS₂ and WSe₂ films to access quality and thickness uniformity. MoS₂ and WSe₂ samples were grown by chemical vapor deposition and atomic layer deposition, respectively. Complex dielectric function ($\epsilon ={\epsilon }_1+i{\epsilon }_2$) and thickness information of these 2D films were extracted from the measured data using multilayer optical calculations. Broad spectral range (1.2–6 eV) and multiple angles of incidence were used to reduce correlations among fitting parameter. Lineshape of ε of MoS₂ and WSe₂ monolayer films are consistent with literature but shows higher values, suggests better quality of our samples. Eight-inch wafer size MoS₂ monolayer sample shows ～ 70% uniformity with an average thickness of 0.65 ± 0.2 nm, and three-layer WSe₂ sample of 8 × 1 cm² area shows ～ 80% uniformity with an average thickness of 2.5 ± 0.4 nm. Our results will be helpful to accelerate commercialization process of 2D devices.     

Formation of Ge self-assembled quantum dots on a SixGe1−x buffer layer

Ge self-assembled quantum dots (SAQDs) grown on a relaxed Si_0.75Ge_0.25 buffer layer were observed using an atomic force microscopy (AFM) and a transmission electron microscopy (TEM). The effect of buried misfit dislocations on the formation and the distribution of Ge SAQDs was extensively investigated. The Burgers vector determination of each buried dislocation using the g·b = 0 invisibility criterion with plane-view TEM micrographs shows that Ge SAQDs grow at specific positions related to the Burgers vectors of buried dislocations. The measurement of the lateral distance between a SAQD and the corresponding misfit dislocation with plane-view and cross-sectional TEM images reveals that SAQDs form at the intersections of the top surface with the slip planes of misfit dislocations. The stress field on the top surface due to misfit dislocations is computed, and it is found that the strain energy of the misfit dislocations provides the preferential formation sites for Ge SAQDs nucleation.     

Plasma-enhanced atomic layer deposition of Co using Co（MeCp）2 precursor

Cobalt（Co） thermal or plasma enhanced atomic layer deposition（PE-ALD） was investigated using a novel metal organic precursor,Co（MeCp）₂, and NH₃ or H₂ or their plasma as a reactant.The growth characteristics,electrical and microstructural properties were investigated.Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃.Interestingly,the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃.The growth characteristics and films properties of PE-ALD Co using bis（η-methylcyclopentadienyl） Co（Ⅱ）（Co（MeCp）₂） was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt（II）（CoCP₂） and cyclopentadienyl isopropyl acetarrudinato-cobalt（Co（CpAMD））.     

Thermodynamics of d-dimensional hard sphere fluids confined to micropores

We derive an analytical expression of the second virial coefficient of d-dimensional hard sphere fluids confined to slit pores by applying Speedy and Reiss' interpretation of cavity space. We confirm that this coefficient is identical to the one obtained from the Mayer cluster expansion up to second order with respect to fugacity. The key step of both approaches is to evaluate either the surface area or the volume of the d-dimensional exclusion sphere confined to a slit pore. We, further, present an analytical form of thermodynamic functions such as entropy and pressure tensor as a function of the size of the slit pore. Molecular dynamics simulations are performed for d = 2 and d = 3, and the results are compared with analytically obtained equations of state. They agree satisfactorily in the low density regime, and, for given density, the agreement of the results becomes excellent as the width of the slit pore gets smaller, because the higher order virial coefficients become unimportant.