Tetramethyldisilan-1,2-diyl-verbrückte Dicyclopentadienyl-und Diindenylmetalldichloride der 4. Gruppe – Kristallstruktur von

Tetramethyldisilane-1,2-diyl bridged Dicyclopentadienyl and Diindenyl Metal Dichlorides of the Group 4 Metals – Crystal Structure of Dicyclopentadienyl and diindenyl metal dichlorides of the type Cp′? SiMe₂SiMe₂? Cp′MCl₂ (Cp′ = C₅H₄, M = Ti ( 1 ), Zr ( 2 ), Hf ( 3 ); Cp′ = C₉H₇, M = Zr ( 4 ), Hf ( 5 )) were synthesized and characterized by means of their ¹H, ¹³C, ²⁹Si-n.m.r., MS, and IR spectra. The crystal structure of 2 was determined.     

Darstellung und Charakterisierung der Trisilylphosphane (Ph 3Si) n P(SiMe 3)3−n,n=1,2,3

A simple preparation of the title compounds is achieved by reacting Na₃P/K₃P with stoichiometric mixtures of chlorotriphenylsilane and chlorotrimethylsilane.³¹P- and²⁹Si-NMR-Data as well as Ir and Raman spectra of the compounds are reported.

     

The vibrational spectra of linear and branched perchlorosilanes Si n Cl2n+2 and their simulation using a local symmetry force field

Infrared andRaman vibrational spectra ofn-Si₄Cl₁₀,n-Si₅Cl₁₂,neo-Si₅Cl₁₂ and [(SiCl₃)₃Si]₂ have been measured and assigned. A local symmetry force field has been developed to simulate vibrational spectra of all (noncyclic) perchlorosilanes Si _n Cl_2n+2 known today (n=2, 3, 4, 5, 8). The observed spectra are reproduced satisfactorily

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Die Vibrationsspektren linearer und verzweigter PerchlorsilaneSi _n Cl _2n+2 und deren Simulierung mittels eines lokalen Symmetrie-Kraftfeldes

Zusammenfassung Infrarot- undRaman-Spektren vonn-Si₄Cl₁₀,n-Si₅Cl₁₂,neo-Si₅Cl₁₂ und [(SiCl₃)₃Si]₂ wurden aufgenommen und zugeordnet. Ein lokales Symmetrie-Kraftfeld zur Simulation der Spektren aller bisher bekannten (nicht cyclischen) Perchlorsilane Si _n Cl_2n+2 (n=2, 3, 4, 5, 8) wird angegeben. Die beobachteten Spektren werden zufriedenstellend reproduziert

     

Determination of trace impurities in boron nitride by graphite furnace atomic absorption spectrometry and electrothermal vaporization inductively coupled plasma optical emission spectrometry using solid sampling

Two digestion-free methods for trace analysis of boron nitride based on graphite furnace atomic absorption spectrometry (GFAAS) and electrothermal vaporization inductively coupled plasma spectrometry optical emission (ETV-ICP-OES) using direct solid sampling have been developed and applied to the determination of Al, Ca, Cr, Cu, Fe, Mg, Mn, Si, Ti and Zr in four boron nitride materials in concentration intervals of 1–23, 54–735, 0.05–21, 0.005–1.3, 1.6–112, 4.5–20, 0.03–1.8, 6–46, 38–170 and 0.4–2.3 μg g^− 1, respectively. At optimized experimental conditions, with both methods, effective in-situ analyte/matrix separation was achieved and calibration could be performed using calibration curves measured with aqueous standard solutions. In solid sampling GFAAS, before sampling, the platform was covered with graphite powder and, for determination of Si, also the Pd/Mg(NO₃)₂ modifier was used. In the determination of all analyte elements by solid sampling ETV-ICP-OES, Freon R12 was added to argon carrier gas. For solid sampling GFAAS and ETV-ICP-OES, the achievable limits of detection were within 5 (Cu)–130 (Si) ng g^− 1 and 8 (Cu)–200 (Si) ng g^− 1, respectively. The results obtained by these two methods for four boron nitride materials of different purity grades are compared each with the other and with those obtained in analysis of digests by ICP-OES. The performance of the two solid sampling methods is compared and discussed.     

Comparison of various calibration techniques for the direct spectroscopical analysis of SiC powders

Techniques for the direct analysis of powdered advanced ceramics provide an advantageous alternative to methods using wet digestion in sample preparation. The direct spectrochemical methods based on electrothermal vaporization (ETV-ICP-OES, solid-ETV-AAS, etc.) show a great similarity to the classical method of d. c. arc excitation. The calibration procedure is the major difficulty of all techniques applied for direct solid sample analysis, as there is a lack of suitable reference materials of ceramics. Consequently, it was necessary to verify various possibilities of preparation and application of model calibration samples. The results of such a calibration are compared with those using within-laboratory standards.     

1,1,2,2-tetrabromodisilane: gas-phase molecular structure and conformational composition as determined by electron diffraction

The molecular structure of 1,1,2,2-tetrabromodisilane has been investigated using gas-phase electron diffraction data obtained at 110°C. At this temperature the molecules exist as a mixture of about equal parts (X = 0.5 ±0.2) of the two conformers with the H---Si---Si---H torsion angle equal to 180° (anti) or 60° (gauche). Assuming that the two conformers differ in their geometries only in the torsion angle φ, some of the important distance (r_a) and angle () parameters are: r(Si---Si) = 2.349(19) Å, r(Si---Br) = 2.205(5) Å, r(Si---H) = 1.485 Å (assumed), Br---Si---Br = 110.1(1.6)°, Si---Si---Br = 107.1(1.2)° Si---Si---H = 108.6° (assumed). The error limits are 2σ. The observed conformational composition (X_anti = 0.5(0.2)) corresponds to an energy difference between the conformers of ΔE = E(gauche) — E(anti) = 0.5 ± 0.6 kcal mol⁻¹, assuming ΔS = Rln2.     

The Cyclohexasilanes Si6H11X and Si6Me11X with X=F,Cl, Br and I: A Quantum Chemical and Raman Spectroscopic Investigation of a Multiple Conformer Problem

The conformers of the monohalocyclohexasilanes, Si₆H₁₁X (X=F, Cl, Br or I) and the haloundecamethylcyclohexasilanes, Si₆Me₁₁X (X=F, Cl, Br or I) are investigated by DFT calculations employing the B3LYP density functional and 6‐31+G* basis sets for elements up to the third row, and SDD basis sets for heavier elements. Five minima are found for Si₆H₁₁X—the axial and equatorial chair conformers, with the substituent X either in an axial or equatorial position—and another three twisted structures. The equatorial chair conformer is the global minimum for the X=Cl, Br and I, the axial chair for X=F. The barrier for the ring inversion is ～13 kJ mol^?1 for all four compounds. Five minima closely related to those of Si₆H₁₁X are found for Si₆Me₁₁X. Again, the equatorial chair is the global minimum for X=Cl, Br and I, and the axial chair for X=F. Additionally, two symmetrical boat conformers are found as local minima on the potential energy surfaces for X=F, Cl and Br, but not for X=I. The barrier for the ring inversion is ～14–16 kJ mol^?1 for all compounds. The conformational equilibria for Si₆Me₁₁X in toluene solution are investigated using temperature dependent Raman spectroscopy. The wavenumber range of the stretching vibrations of the heavy atoms X and Si from 270–370 cm^?1 is analyzed. Using the van′t Hoff relationship, the enthalpy differences between axial and equatorial chair conformers (H_ax?H_eq.) are 1.1 kJ mol^?1 for X=F, and 1.8 to 2.8 kJ mol^?1 for X=Cl, Br and I. Due to rapid interconversion, only a single Raman band originating from the “averaged” twist and boat conformers could be observed. Generally, reasonable agreement between the calculated relative energies and the experimentally determined values is found.     

Determination of trace metals in industrial boron carbide by solid sampling optical emission spectrometry. Optimization of DC arc excitation (current, atmosphere and chemical modifier)

Graphite arc emission spectrometry has become possible as a result of the invention of novel types of optical spectrometers with Echelle-optics and semiconductor array detectors, and by the application of electronically controlled, high current arc generators. An optimization of the excitation parameters to boron carbide analysis is reported here, measuring background corrected line intensities that were integrated for the time of total evaporation of 5 mg boron carbide sample with or without added chemical modifiers. The following set of experimental conditions were compared with respect of analytical sensitivity and precision: (A) no modifier, Ar + O₂ (20%), 16 A; (B) sample + graphite powder (1 + 1), Ar + O₂ (20%), 16 A; (C) sample + CaF₂ (1 + 1), Ar, 25 A; (D) sample + CaF₂ + graphite powder (1 + 1 + 1), Ar, 25 A. The graphite powder modifier resulted in improved precision in general, and the CaF₂ was effective as a plasma ionization buffer and fluorinating agent. The best compromise was found under conditions B, when oxygen was present in the discharge atmosphere. This is likely due to the stepwise conversion of the boron carbide matrix to the more volatile boron oxide. Under conditions B, detection limits in the ranges of 0.3–9 μg g⁻¹ for Al, Ca, Cr, Cu, Fe, Mg, Mn and Si and that of 18–38 μg g⁻¹ for Ti, W, and Zr were attained. Average RSDs of 10.2 and 9.7% were found, respectively, without and with internal referencing to boron.     

Do halogen and methyl substituents have electronic effects on the structures of simple disilanes? An experimental and theoretical study of the molecular structures of the series X3SiSiMe3 (X = H, F, Cl and Br)

The gas-phase molecular structures of a series of halogen-substituted disilanes [X₃SiSiMe₃ (X = H, F, Cl and Br)], 1,1,1-trimethyldisilane (H₃SiSiMe₃), 1,1,1-trifluoro-2,2,2-trimethyldisilane (F₃SiSiMe₃), 1,1,1-trichloro-2,2,2-trimethyldisilane (Cl₃SiSiMe₃) and 1,1,1-tribromo-2,2,2-trimethyldisilane (Br₃SiSiMe₃), have been determined in the gas phase by electron diffraction. Ab initio calculations at the HF and MP2 level were used to support the experimental investigation using the SARACEN method. All of the investigated structures were determined to adopt a staggered structure with C _3v symmetry. The effect of substitution on the Si–Si bond and the Si–Si–X bond angle was investigated and these results were compared to results obtained from a recent study of halogen-substituted disilanes [X₃SiSiXMe₂ (X = F, Cl, Br and I)] to consider the effect of the methyl groups on the substituted disilanes.     

New fluorine derivatives of methylcyclohexasilane

1,1-Difluorodecamethyl- and 1,1,4,4-tetrafluorooctamethylcyclohexasilane were synthesized by the reaction of LiF with the corresponding trifluoromethanesulfonic derivatives and were characterized by spectroscopic methods, mainly by modern NMR techniques. The stability of the fluorinated cyclosilanes decreases with an increase of fluorine substituents. This seems to be the reason for the instability of perfluorinated cyclosilanes.