Hexagonal Si−Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature

Multi-anvil and laser-heated diamond anvil methods have been used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500–1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge−Si solid solutions (P6₃/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge−Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge−Si solid solution family, and is of interest for optoelectronic applications.     

Untersuchung von Wasser

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BiVO4‐TiO2 Composite Photocatalysts for Dye Degradation Formed Using the SILAR Method

Composite photocatalyst films have been fabricated by depositing BiVO₄ upon TiO₂ via a sequential ionic layer adsorption reaction (SILAR) method. The photocatalytic materials were investigated by XRD, TEM, UV/Vis diffuse reflectance, inductively coupled plasma optical emission spectrometry (ICP‐OES), XPS, photoluminescence and Mott–Schottky analyses. SILAR processing was found to deposit monoclinic‐scheelite BiVO₄ nanoparticles onto the surface, giving successive improvements in the films′ visible light harvesting. Electrochemical and valence band XPS studies revealed that the prepared heterojunctions have a type II band structure, with the BiVO₄ conduction band and valence band lying cathodically shifted from those of TiO₂. The photocatalytic activity of the films was measured by the decolourisation of the dye rhodamine 6G using λ>400 nm visible light. It was found that five SILAR cycles was optimal, with a pseudo‐first‐order rate constant of 0.004 min^?1. As a reference material, the same SILAR modification has been made to an inactive wide‐band‐gap ZrO₂ film, where the mismatch of conduction and valence band energies disallows charge separation. The photocatalytic activity of the BiVO₄–ZrO₂ system was found to be significantly reduced, highlighting the importance of charge separation across the interface. The mechanism of action of the photocatalysts has also been investigated, in particular the effect of self‐sensitisation by the model organic dye and the ability of the dye to inject electrons into the photocatalyst′s conduction band.     

Synthesis and high-resolution study distinguishing between very similar interstitial iron nitride structures

Angle-dispersive X-ray diffraction and microfluorescence together with precession electron diffraction (PED) and scanning electron microscopy measurements on iron nitride prepared at 15?GPa and 1800?K from iron and sodium azide starting materials reveal synthesis of both hexagonal P6₃22 and trigonal P312 Fe₃N_1+x modifications (a?=?4.745 (1) Å, c?=?4.403 (1) Å, Z?=?2). Nitrogen access to vacant interstitial sites, repulsions between nitrogen ions and metal nitride thermal stability are the factors relating iron nitride-phase relations to those of other early (Hf, Zr, Ti)-N and late (Ni-N) transition metal nitrides subjected to similar pressure and temperature conditions. Here, Fe₃N_1+x can accommodate pressure and x variability by situating nitrogen in a broader range of interstitial crystallographic sites in the intimately related hexagonal and trigonal crystal structures.     

Entdeckung des Arsens in Kupfer

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Creating Reactivity with Unstable Endmembers using Pressure and Temperature: Synthesis of Bulk Cubic Mg0.4Fe0.6N

Alloy and nitride solid solutions are prominent for structural, energy and information processing applications. There are frequently however barriers to making them. We remove barriers to reactivity here using pressure with a new synthetic approach. We target pressures where the reasons for cubic endmember nitride instability can become the driving force for cubic nitride solid solution stability. Using this approach we form a novel rocksalt Mg_0.4Fe_0.6N solid solution at between 15 and 23 GPa and up to 2500 K. This is a system where, neither an alloy nor a nitride solid solution form at ambient conditions and bulk MgN and FeN endmembers do not form, either at ambient or at high pressure. The new nitride is formed, by removing endmember lattice mismatch with pressure, allowing a stabilizing redistribution of valence electrons upon heating. This approach can be employed for a range of normally unreactive systems. Mg, Fe and enhanced nitrogen presence, may also indicate a richer reaction chemistry in our planets interior.