Investigation of thin-film electroluminescent structures on rough subsrates

Results of experimental investigations of the volt-brightness characteristics, frequency dependences of brightness, and the directional radiation pattern of electroluminescent MSDM, MSCM, and MSDCM emitters, where M stands for the first transparent and second nontransparent electrodes, S is a semiconductor, D is a thin-film dielectric, and C is a silicone-based composite liquid dielectric with a powdered segnetoelectric filler, developed on conventional “smooth” and rough glass substrates are presented. It is shown that electroluminescent structures on rough surfaces have a brightness approximately two times higher than that of similar structures developed on a “smooth” substrate. Ul’yanovsk State University, 42, L. Tolstoi St., Ul’yanovsk, 432700, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 507–512, July–August, 1997.     

Influence of ionizing radiation on the magnetically sensitive properties of planar triacs

Changes in the magnetically sensitive properties of multilayer semiconductors devices, such as planar diffusion triacs, that are related to atomic-displacement-induced defects and ionization by irradiation are considered. It is shown that irradiation may significantly raise the magnetic sensitivity of the triacs. Processes and underlying mechanisms responsible for the improvement of the magnetic sensitivity under the action of a number of galvanomagnetic effects are studied.     

Partition of Euclidean space into polyhedra induced by a small deformation of the densest lattice sphere packing

The number of combinatorially nonequivalent Dirichlet-Voronoi diagrams constructed for the centers of balls in the packing obtained from the densest lattice packing of equal spheres by a small displacement of the spheres is estimated. __________ Translated from Fundamentalnaya i Prikladnaya Matematika, Vol. 11, No. 5, pp. 79–84, 2005.     

The studies of structural aspects of the cluster formation in silicate glasses doped with cerium and titanium oxides by small-angle neutron scattering

The structural aspects of the formation of Ti-Ce-O nanoclusters in silicate glasses doped with oxides TiO₂ and CeO₂ have been studied by means of small-angle neutron scattering. It has been obtained that, in such glasses, complex oxide nanoclusters with sizes of 300–380 Å are formed; their average size increases and the fractal dimension is changed as the concentration of the initial oxides increases. Correlation between the structural characteristics of the nanoclusters and the optical properties of the doped silicate glasses is discussed.     

Low-temperature transport and ferromagnetism in GaAs-based structures with Mn

GaAs structures with implanted Mn and, additionally, with Mg for increasing the hole concentration in the implanted Mn layer are synthesized and investigated. SQUID magnetometer measurements revealed the existence of ferromagnetism in the temperature range 4.2 K ≤ T < 400 K, which is associated with the formation of the Ga_1?x Mn _x As solid solution and MnAs and Ga_1?y Mn _y clusters in the sample as a result of rapid high-temperature annealing. At temperatures from 4.2 to approximately 200 K, the anomalous Hall effect associated with additional magnetization of the sample is observed. As the temperature increases from 4.2 K, the colossal negative magnetoresistance is transformed into a positive magnetoresistance at T ≈ 35 K.     

Transport and ferromagnetism in InGaAs quantum well structures delta-doped with Mn

Samples containing InGaAs quantum wells with p-type conductivity delta-doped by Mn were synthesized and studied. Magnetic moment measurements on a SQUID magnetometer revealed the presence of ferromagnetism at temperatures T from 4.2 to 400 K. Anomalous Hall effect caused by additional sample magnetization was observed at temperatures of from about 30 to 80 K. The Shubnikov-de Haas effect was recorded at 4.2 K. Negative magnetoresistance changed sign for positive at T ≈ 30 K as the temperature increased.     

The physicochemical features of binary immiscible metal systems in a new method of synthesis and crystallization

Features of the structure of phase diagrams of immiscible binary metal systems for synthesis and crystallization of various compounds by a new method are considered: temperature and concentration limits of immiscibility, ratio of densities of system components, use of mixed solvents, and processes of hardening of pure immiscible systems. An example of obtaining crystals of refractory compounds is given.     

Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility

Magnetic and magnetotransport properties of GaAs(δ〈Mn〉)/In_0.17Ga_0.83As/GaAs quantum wells with different Mn concentrations are studied. The delta-doped manganese layer has been separated from the GaAs quantum well with a spacer with an optimal thickness (3 nm), which has provided a sufficiently high hole mobility (≥10³ cm²V^?1 s^?1) in the quantum wells and their effective exchange with Mn atoms. It is found that the anomalous Hall effect (AHE) is exhibited only in a restricted temperature range above and below the Curie temperature, while the AHE is not observed in quantum wells with quasi-metallic conductivity. Thus, it is shown that the use of the AHE is inefficient in studying magnetic ordering in semiconductor systems with high-mobility carriers. The features observed in the behavior of the resistance, magnetoresistance, and Hall effect are discussed in terms of the interaction of holes with magnetic Mn ions with regard to fluctuations of their potential, hole transport on the percolation level, and hopping conduction.