M4C9+(M = Ti, V): New gas phase clusters

New metal-carbon clusters, M₄C₉ ⁺ (M = Ti, V), generated using a combined thermal arc discharge evaporation set-up, have been studied with quadrupole mass spectrometry. Reactivities of these clusters have been investigated by means of association reactions with H₂O. Metal-carbon clusters of other compositions have also been studied. We speculate on the mechanism of formation of larger metal-carbon clusters.     

Three dimensional transport lattice model for describing action potentials in axons stimulated by external electrodes

Conditions that stimulate action potentials in one or more nerves is of widespread interest. Axon and nerve models are usually based on two dimensional pre-specified lumped equivalents that assume where currents will flow. In contrast, here we illustrate creation of three dimensional (3D) system models with a transport lattice of interconnected local models for external and internal electrolyte and axon membrane. The transport lattice solves Laplace's equation in the extracellular medium and is coupled to the Hodgkin-Huxley model at local membrane sites. These space-filling models incorporate the geometric scale, which allows explicit representation of confined axons and external electrodes. The present results demonstrate feasibility of the basic approach. These models are spatially coarse and approximate, but can be straightforwardly improved. The transport lattice system models are modular and multiscale (spatial scales ranging from the membrane thickness of 5 nm to the axon segment length of 2 cm).     

有机硅活性中间体的研究 II. 一些含环丙基的有机硅化合物的合成及其结构

用锂有机物的方法合成了四种含有环丙基有机硅化合物,对上述每种化合物中可能存在着的立体异构进行了分离和和构型测定。     

The 160.44 day Lu as a new gamma calibration standard

Gamma emissions in the decay of 160.44 day isomer ^177mLu were analyzed with a 60 cc, coaxial HPGe detector. The energies and intensities of 50 gamma transition - 40 of which belong to the daughter ¹⁷⁷Hf, that was excited by beta decay of the isomer, and 10 to the isomeric transition in ¹⁷⁷Lu were precisely determined. These precise values have resulted in an internally consistent decay scheme for ^177mLu. These gamma intensity and gamma emission probability measurements will help in making the long lived ^177mLu available as a calibration standard for HPGe detectors and also for other applications.     

Influence of substrate and film thickness on structural,optical and electrical properties of ZnO thin films

Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of 450 °C. It has been found that the average growth rate on Si (100) substrate (8.6 nm/min) is higher than that on Sapphire (0001) substrate (2.6 nm/min) in an identical growth condition which clearly shows the virtual role of substrates. The lower growth rate on Sapphire (0001) suggests that the increasingly ordered and uniform growth due to less lattice mismatch. The grown films have been characterized by X‐ray diffraction (XRD), Reflectance, Photoluminescence (PL) and Hall measurements. The XRD result (FWHM) reveals that for lower growth time, the films grown on Si (100) is better than on Sapphire (0001). Conversely, for higher growth time, the films grown on Sapphire (0001) is better than on Si (100). The variation of strain behavior due to thickness on both substrates has been justified by UV‐Vis reflectance, photoluminescence and Hall effect measurements. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Performance evaluation of a single queue capable of handling two like jobs as a single entity

In this paper, we model an open queuing network and analyze performance measures with and without feedback as two individual cases. The model comprises a single queue with a dedicated processor capable of handling two like jobs as a single job. Two different job arrivals with different processing times are considered with an internal timer. Performance measures such as average queue length, average response time, average waiting time of the jobs are computed and plotted. The joint density function for the inter arrival time and arrival rate are derived. The probability mass function has been derived for all possible cases that may arise in a duration (0, t], considering n job arrivals during that period of time and an integer programming problem is formulated to obtain optimal sequence patterns which would maximize the efficiency of the model.     

Model of a confined spherical cell in uniform and heterogeneous applied electric fields

Cells exposed to electric fields are often confined to a small volume within a solid tissue or within or near a device. Here we report on an approach to describing the frequency and time domain electrical responses of a spatially confined spherical cell by using a transport lattice system model. Two cases are considered: (1) a uniform applied field created by parallel plane electrodes, and (2) a heterogeneous applied field created by a planar electrode and a sharp microelectrode. Here fixed conductivities and dielectric permittivities of the extra- and intracellular media and of the membrane are used to create local transport models that are interconnected to create the system model. Consistent with traditional analytical solutions for spherical cells in an electrolyte of infinite extent, in the frequency domain the field amplification, G(m) (f) is large at low frequencies, f<1 MHz. G(m) (f) gradually decreases above 1 MHz and reaches a lower plateau at about 300 MHz, with the cell becoming almost "electrically invisible". In the time domain the application of a field pulse can result in altered localized transmembrane voltage changes due to a single microelectrode. The transport lattice approach provides modular, multiscale modeling capability that here ranges from cell membranes (5 nm scale) to the cell confinement volume ( approximately 40 microm scale).     

Influence of Al concentration on electrical, structural and optical properties of Al-As codoped p-ZnO thin films

We report the influence of Al concentration on electrical, structural, optical and morphological properties of Al-As codoped p-ZnO thin films using RF magnetron sputtering. Al-As codoped p-ZnO films with different Al concentrations were fabricated using As back diffusion from the GaAs substrate and sputtering Al₂O₃ mixed ZnO targets (1, 2 and 4 at%). The grown films were investigated by Hall effect measurement, X-ray diffraction (XRD), electron probe microanalysis (EPMA), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and atomic force microscopy (AFM) to study the electrical, structural, optical and morphological properties of the films. From the XRD, it was observed that both full-width at half-maximum (FWHM) and c-axis lattice constant have similar trends with respect to Al concentration. Hall measurements showed that the hole concentration increases as the Al concentration increases from 10¹⁵ to 10²⁰ cm⁻³. The increase in hole concentration upon codoping was supported by the red shift in the near-band-edge (NBE) emission observed from room temperature PL spectra. The proposed p-type mechanism due to As_Zn-2V_Zn complex was confirmed by low temperature PL and XPS analysis. The low FWHM, resistivity and peak-to-valley roughness observed by XRD, Hall measurement and AFM, respectively, suggest that 1 at% Al-doped ZnO:As film is the best codoped film.     

The microwave heating of two-dimensional slabs with small Arrhenius absorptivity

The microwave heating of two-dimensional slabs in a long rectangularwaveguide propagating the TE₁₀ mode is examined. The temperaturedependency of the electrical conductivity and the thermal absorptivityis assumed to be governed by the Arrhenius law, while both theelectrical permittivity and the magnetic permeability are assumedconstant. The governing equations are the forced heat equationand the steady-state version of Maxwell's equation while theboundary conditions take into account both convective and radiativeheat loss. Approximate analytical solutions, valid for smallthermal absorptivity, are found for the temperature and theelectric-field amplitude using the Galerkin method. As the Arrheniuslaw is not amenable analytically, it is approximated by a rational-cubicfunction. At the steady state the temperature versus power relationshipis found to be multivalued; at the critical power level thermalrunaway occurs when the temperature jumps from the lower (cool)temperature branch to the upper (hot) temperature branch ofthe solution. In the steady-state limit the approximate analyticalsolutions are compared with the numerical solutions of the governingequations for various special cases. These are the limits ofsmall and large heat loss and an intermediate case involvingradiative heat loss. Results are also presented for a case wheredifferential cooling occurs on the different sides on the slab.An alternative heating scenario, where one end of the waveguideis blocked by a short, is also considered. The approximate solutionsare found for this geometry and compared in the small Biot-numberlimit to Kriegsmann (1997). Also, a control process is presented,which allows thermal runaway to be avoided and the desired finalsteady state to be reached. Various special cases of the feedbackparameters associated with the control process are examined.