Voltammetric determination of selenosulfate ions at a mercury-film electrode

A procedure is proposed for the voltammetric determination of selenium as selenosulfate (SO₃Se^2?) ions at a mercury-film electrode (MFE). Selenosulfate ions are determined in the range from 2 × 10^?4 to 1.0 × 10^?3 M without analyte accumulation, using peak current at ?0.92 ± 0.02 V and in the range from 1 × 10^?7 to 2 × 10^?4 M after analyte accumulation with the open circuit, using peak current at ?1.18 ± 0.03 V as the analytical signal. The mechanisms of SO₃Se^2? reduction at an MFE under the conditions of direct voltammetry and stripping voltammetry with accumulation are proposed and discussed.     

A radical mechanism of the reaction of molybdenum carbonyl complexes with bis(triethylgermyl)mercury

The reaction of [Cp(CO)₃Mo]₂ with (Et₃Ge)₂Hg occurs in toluene and THF by a radical mechanism. The interaction between [Cp(CO)₃Mo]₂Hg and (Et₃Ge)₂Hg has a radical character only in THF. The formation of Cp(CO)₃MoH at the first stage of these reactions substantially affects the further course of the process.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1648–1650, September, 1993.     

Reactions of silylmercury compounds with sodium and potassium in the aromatic solvents

Bis(triethylsilyl)mercury (I) and triethylsilyl(pentaethyldisilanyl)mercury (II) react with metallic sodium or potassium in benzene solution to give phenyltriethylsilane (III) and a mixture of III and 1-phenyl-2,2,3,3,3-pentaethyldisilane, respectively, instead of the expected silylmetallic compounds (e.g. Et₃SiM and Et₅Si₂M, where M = Na or K). These results may be explained by the intermediate formation of silylmetallic compounds which reacted with the solvent. The reaction of I with potassium in toluene proceeds analogously.     

Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them

Results of investigation of 1550 nm range stripe semiconductor lasers fabricated from heterostructures with different designs of the gain medium are presented. It is shown that the proposed designs of the gain medium allow obtaining the effective lasing at high level of total optical losses, comparable with the typical optical losses in the vertical-cavity surface-emitting lasers. The evaluation of modal gain in different types of the gain mediummade it possible to estimate the possible frequencies of the small-signal modulation of vertically emitting lasers and proposed the ways to increase them up to 20 GHz or more.     

Heat resistance of composite sorption-active materials based on zeolite and fluoroethylene polymers

Relationship was found between the temperature of thermal degradation of composite sorption-active materials based on fluorinated ethylene polymers and the content of NaX zeolite in these materials.     

Advection of a passive vector field by the Gaussian velocity field with finite correlations in time

Using the field theoretic renormalization group technique the model of a passive vector field advected by an incompressible turbulent flow is investigated up to the second order of the perturbation theory (two-loop approximation). The turbulent environment is given by statistical fluctuations of the velocity field that has a Gaussian distribution with zero mean and defined noise with finite correlations in time. Two-loop analysis of all possible scaling regimes in general d-dimensional space is done in the plane of exponents ? ? η, where ? characterizes the energy spectrum of the velocity field in the inertial range E ∝ k ^{1 ? 2ε}, and η is related to the correlation time at the wave number k which is scaled as k ^{?2 + η}. It is shown that the scaling regimes of the present model of vector advection have essentially different properties than the scaling regimes of the corresponding model of passively advected scalar quantity. The results demonstrate the fact that within the present model of passively advected vector field the internal tensor structure of the advected field can have nontrivial impact on the diffusion processes deep inside in the inertial interval of given turbulent flow.     

Emission of terahertz radiation from GaAsN/GaAs heterostructures in an electric field

Emission of terahertz radiation from strained Be-doped GaAsN layers has been revealed at 4.2 K in postbreakdown electric fields. Heavy and light hole subbands are split in strained layers, and, along with localized acceptor states, resonant states arise. The spectrum of terahertz radiation has been obtained, the current-voltage characteristics of the samples were investigated, and the energy spectra of acceptors were calculated. Peaks in the spontaneous emission spectrum correlate well with the results of the energy spectrum calculations. The transitions between the resonant and localized states of the acceptors make the main contribution to the terahertz radiation intensity.     

Optical Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Fifth-Group Elements

Optics and Spectroscopy - The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs...