Focused ion beam sectioning and lift-out method for copper and resist vias in organic low-k dielectrics.

The focused ion beam lift-out technique for scanning electron microscope (SEM) and transmission electron microscope (TEM) sample preparation was shown to be applicable to copper/low-k dielectric semiconductor technology. High resolution SEM, TEM, and scanning transmission electron microscope analyses were performed on metal contacts and resist vias with no evidence of the interface damage or metal smearing commonly observed with mechanical polishing. Ion milling of the sample ex situ to the substrate provided decoration and adjustment of the exposed plane of the section when necessary for SEM analysis.     

Rapid crack growth in a thermoelastic solid under mixed-mode thermomechanical loading

A two-dimensional steady-sate analysis of semi-infinite brittlecrack growth at a constant subcritical rate in an unboundedfully-coupled thermoelastic solid under mixed-mode thermomechanicalloading is made. The loading consists of normal and shear tractionsand heat fluxes applied as point sources (line loads in theout-of-plane direction). A related problem is solved exactly in an integral transformspace, and robust asymptotic forms used to reduce the originalproblem to a set of integral equations. The equations are partiallycoupled and exhibit operators of both Cauchy and Abel types,yet can be solved analytically. The temperature change field at a distance from the moving crackedge is then constructed, and its dominant term is found tobe controlled by the imposed heat fluxes. The role of this termis, indeed, enhanced if the heat fluxes serve to render thecrack as a net heat source/sink for the solid, as opposed tobeing a transmitter of heat across its plane. More generally,the influence of the thermoelastic coupling on this field, aswell as other functions, is found to increase with crack speed.     

Low dielectric constant nanocomposite thin films based on silica nanoparticle and organic thermosets

Low dielectric constant (low-k) nanocomposite thin films have been prepared by spin coating and thermal cure of solution mixtures of one of two organic low-k thermoset prepolymers and a silica nanoparticle with an average diameter of about 8 nm. The electrical, the mechanical, and the thermomechanical properties of these low-k nanocomposite thin films have been characterized with 4-point probe electrical measurements, nanoindentation measurements with an atomic force microscope, and specular X-ray reflectivity. Addition of the silica nanoparticle to the low-k organic thermosets enhances both the modulus and the hardness and reduces the coefficient of thermal expansion of the resultant nanocomposite thin films. The enhancements in the modulus of the nanocomposite thin films are less than those predicted by the Halpin-Tsai equations, presumably due to the relatively poor interfacial adhesion and/or the aggregation of the hydrophilic silica nanoparticles in the hydrophobic organic thermoset matrices. The addition of the silica nanoparticle to the low-k organic thermoset matrices increases the relative dielectric constant of the resultant nanocomposite thin films. The relative dielectric constant of the nanocomposite thin films has been found to agree fairly well with an additive formula based on the Debye equation. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1482–1493, 2007     

Synthetic magnetic opals

We present studies of novel nanocomposites of BiNi impregnated into the structure of opals as well as inverse opals. Atomic force microscopy and high resolution elemental analyses show a highly ordered structure and uniform distribution of the BiNi filler in the matrix. These BiNi-based nanocomposites are found to exhibit distinct ferromagnetic-like ordering with transition temperature of about 675 K. As far as we know there exists no report in literature on any BiNi compound which is magnetic.     

Tungsten oxide nanowire growth by chemically induced strain

We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposition (CVD) conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900 degrees C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also to other nanowire systems.     

Multiple double cross-section transmission electron microscope sample preparation of specific sub-10 nm diameter Si nanowire devices

The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.     

Monocyte-specific esterase isoenzyme demonstrated by isoelectric focusing

Using horizontal thin-layer isoelectric focusing in polyacrylamide gels, we separated the isoenzymes of carboxylic esterase (EC 3.1.1.1) of cell extracts prepared from human hematopoietic cells. Isoenzyme bands were visualized by staining with naphthol ester as substrate and coupling to an azo dye. Staining intensities of isoenzymes were quantified by densitometric scanning. On isoelectric focusing in a pH 2-11 gradient, distinct esterase isoenzyme profiles could be discerned and correlated to various types of normal hematopoietic cells and their leukemic counterparts. One unique isoenzyme, termed monoband, could be clearly identified on the basis of its isoelectric point (pI 6.0), its strong expression by normal and malignant monocytes and its complete and selective inhibition by sodium fluoride. This band was only found in monocytes of either normal or leukemic origin, but not in lymphoid or myeloid cells. The monocyte esterase could be inhibited by sodium fluoride whereas other isoenzyme bands were resistant to this inhibition. However, the specificity of this inhibitory reaction was relative, depending on the concentration of sodium fluoride. Compared with normal monocytes, leukemic monocytes often showed an overexpression of the mono-bands. Dilution experiments established the distinct prominence of the mono-band which could be detected among the other isoenzymes even when only 1% of the total cell population consisted of monocytes. Immature myeloid, but mono-band negative leukemic cells whose arrest of differentiation can be overcome by in vitro 12-O-tetradecanoylphorbol 13-acetate-promoted differentiation to more mature cells, could be induced to express the mono-band which paralleled their maturation to monocytes.(ABSTRACT TRUNCATED AT 250 WORDS)     

InAs nanowire growth on oxide-masked 〈111〉 silicon

Here we investigate the growth of InAs nanowires on 〈111〉 Si substrates masked by SiO_x using metal–organic chemical vapor deposition. We study 〈111〉 (axial) and 〈1?10〉 (radial) growth of InAs NWs by varying growth duration, temperature, group-III molar flows, V/III ratio, mask material, mask opening size, and inter-wire distance. We find that growth takes place without an In droplet and the process evolves through three successive phases: nucleation of an InAs cluster, followed by two distinct nanowire growth phases. These two growth phases have different axial and radial growth rates, which originate in a transition from having In supply dominated by the open Si area in the first phase towards an In supply from the vapor/oxide mask in the second growth phase. The linear relation found between nanowire length and diameter vs. time in the last growth phase indicates that 〈111〉 growth is not surface diffusion limited as is usually the case for catalyzed growth. A high yield of vertical nanowires is obtained if group-III flow is above and V/III ratio below threshold values, in addition to having an arsenic-terminated Si surface. Furthermore, we observe that 〈111〉 and 〈1?10〉 growth is surface kinetically limited below 520 °C and 540 °C, respectively, with activation energies of 20 and 6.5 kcal/mol. This difference in activation energies limits the selectivity of the 〈111〉 to 〈1?10〉 growth to 25:1 under optimized conditions, which must be considered when fabricating axially modulated structures. However, we find that by placing wires in large arrays it is possible to completely stop the 〈1?10〉 growth rate in favor of the 〈111〉 growth rate.