On universal subsets of Banach spaces

We prove that to most of the known hypercyclic operators A on separable Banach spaces there exist compact (compact convex, compact connected) subsets K of E such that each compact (compact convex, compact connected) subset of E can be approximated with respect to Hausdorff's distance by for suitable . Received July 8, 1997, in final form October 17, 1997     

A note on a theorem of Raubenheimer and Rode

We prove the converse of Raubenheimer and Rode's Banach algebra version of the Perron-Frobenius Theorem.

     

Weighted Coorbit Spaces and Banach Frames on Homogeneous Spaces

This article is concerned with frame constructions on domains and manifolds. The starting point is a unitary group representation which is square integrable modulo a suitable subgroup and therefore gives rise to a generalized continuous wavelet transform. Then generalized coorbit spaces can be defined by collecting all functions for which this wavelet transform is contained in a weighted L_p-space. Moreover, we show that a judicious discretization of the representation leads to an atomic decomposition and to Banach frames for these coorbit spaces.     

Multicenter ligand transformations of thioureas on ruthenium clusters

The reaction of trirutheniumdodecacarbonyl with various thioureas was found to give, depending upon the substituents and the reaction conditions, a large variety of tri-, tetra-, penta-, and hexanuclear ruthenium clusters. The ligand systems observed in the products are derived from the thioureas employed; the fragmentation of the thiourea molecules involve N-H, C-S, C-H, and C-N activation processes.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.