Mapping of possible prion protein self-interaction domains using peptide arrays

Background  

The common event in transmissible spongiform encephalopathies (TSEs) or prion diseases is the conversion of host-encoded protease sensitive cellular prion protein (PrP^C) into strain dependent isoforms of scrapie associated protease resistant isoform (PrP^Sc) of prion protein (PrP). These processes are determined by similarities as well as strain dependent variations in the PrP structure. Selective self-interaction between PrP molecules is the most probable basis for initiation of these processes, potentially influenced by chaperone molecules, however the mechanisms behind these processes are far from understood. We previously determined that polymorphisms do not affect initial PrP^C to PrP^Sc binding but rather modulate a subsequent step in the conversion process. Determining possible sites of self-interaction could elucidate which amino acid(s) or amino acid sequences contribute to binding and further conversion into other isoforms. To this end, ovine – and bovine PrP peptide-arrays consisting of 15-mer overlapping peptides were probed with recombinant sheep PrP^C fused to maltose binding protein (MBP-PrP).     

Quantitative determination of oxygen in silicon by combination of FTIR-spectroscopy,inert gas fusion analysis and secondary ion mass spectroscopy

Analytical and Bioanalytical Chemistry - VLSI devices are almost exclusively fabricated on Czochralski (CZ) silicon containing high concentrations of interstitially dissolved oxygen ([Oi] ∼...     

Boron implantation in Si: Channeling effects studied by SIMS and simulation

The axial channeling behaviour of boron implants in <100>, <110> and <111> silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the projected range of channeled ions or channeling peak) and the fraction of channeled to implanted ions are observed among the three major crystal orientations. Within the critical angle, the channeling behaviour is very sensitive to the incidence beam angle with respect to crystal orientations. SIMS measurements are performed at different positions along several critical directions over a whole wafer. Well channeled profiles with an incidence beam angle to crystal orientations of 0 ° are obtained for each ion implantation energy and orientation. The results are used to test various models of ion implantation by simulation. A 3-parameter model for electronic stopping power of boron in silicon was proposed.     

Systems biology reveals biology of systems

In the last decades, genomic and postgenomic technologies obtained a great amount of information on molecular bases of cell physiology and organization. In spite of this, the knowledge of cells and living organisms in their entirety, is far from being achieved. In order to deal with biological complexity, Systems Biology uses a new approach to overcome this inadequacy. Despite different definitions, Systems Biology's view of biological phenomena highlights that a holistic perspective is needed to integrate and understand the huge amount of empirical data which have been collected. This is one of the aspects that makes Systems Biology so interesting, from a theoretical and epistemological point of view, and that renders it a useful tool to help students approach living beings' dynamics within a comprehensive framework of their biological features as well. © 2010 Wiley Periodicals, Inc. Complexity, 2010     

Diffractively produced charm final states in 800-GeV/c pp collisions

We report the first observation of diffractively produced open charm in 800-GeV/c pp collisions of the type pp-->pD*X. We measure cross sections of sigma(diff)(D*+) = (0.185+/-0.044+/-0.054) (mu)b and sigma(diff)(D(*-)) = (0.174+/-0.034+/-0.029) (mu)b. Our measurements are based on 4.3x10(9) events recorded by FNAL E690 in the fixed-target run of 1991. We compare our results with previous fixed-target charm experiments.     

Studies on photoinduced effects in pulse-electrodeposited Ag/Hg-1212/CdSe hetero-nanostructures

Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined. The increase in carrier concentration across the junction due to photo-irradiation has been observed.     

Effect of laser irradiation of C-V characteristics of electrodeposited Ag/Tl-2223/CdSe hetero-nanostructures

One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation, metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction built-in-potential (V _D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied.