Effects of boron and barium dopants on VMgO catalysts employed in the oxidative dehydrogenation of n-octane

Kinetics and Catalysis - Boron and barium were employed as dopants for the VMgO system. The catalysts were characterized by ICP-OES, BET, IR, powder XRD, EDX, TPR-H2, TPD-NH3, XPS, and 51V MAS NMR....     

Conformal fields,restriction properties,degenerate representations and SLEChamps conformes,propriété de restriction,représentations dégénérées et SLE

We relate the Schramm–Loewner Evolution processes (SLE) to highest-weight representations of the Virasoro Algebra. The restriction properties of SLE that have been recently derived in [19] play a crucial role. In this setup, various considerations from conformal field theory can be interpreted and reformulated via SLE. This enables one to make a concrete link between the two-dimensional discrete critical systems from statistical physics and conformal field theory. To cite this article: R. Friedrich, W. Werner, C. R. Acad. Sci. Paris, Ser. I 335 (2002) 947–952.     

面心立方晶体外延膜沉积生长中失配位错的结构与形成过程

用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明，失配位错在形成之初即呈现为Shockley扩展位错，即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成，两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致；外延晶体薄膜沉积生长中，位错对会发生滑移，但其间距保持稳定.进一步观察发现，该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词： 失配位错 外延生长 薄膜 分子动力学 铝     

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Towards molecular-scale electronics and biomolecular self-assembly

This paper provides an overview of recent research developments in the field of nanoelectronics with organic materials such as carbon nanotubes and DNA-templated nanowires. Carbon nanotubes and gold electrodes are chemically functionalized in order to contact carbon nanotubes by self-assembly. The transport properties of these nanotubes are dominated by charging effects and display clear Coulomb blockade behaviour. A different approach towards nanoscale electronics is based on the molecular recognition properties of biomolecules such as DNA. As an example, DNA is stretched between electrodes using a molecular combing technique. A two-step metallization procedure leads to the formation of highly conductive gold nanowires.