排序方式: 共有58条查询结果,搜索用时 15 毫秒
1.
2.
Jie Han Feng-Yan Zhang Juan-Yu Wang Yan-Mei Wang Mei-Li Pang Ji-Ben Meng 《Liquid crystals》2013,40(8):825-833
A series of heterocyclic liquid crystalline compounds containing 1,3,4-oxadiazole/thiadiazole, furan and thiophene units were synthesised and characterised by means of electrospray ionisation-mass spectrometry (ESI-MS), high-resolution mass spectroscopy (HRMS), 1H nuclear magnetic resonance (NMR) and 13C NMR. The thermal behaviours were investigated by differential scanning calorimetry (DSC) and polarised optical microscopy (POM). The effect of the 1,3,4-oxadiazole, 1,3,4-thiadiazole, furan, thiophene and benzene rings on the liquid crystalline properties was discussed briefly in context with the geometrical and electronic factors. The results showed that the tendency to form mesophases follows the sequence: 1,4-disustituted benzene >2,5-disubstituted thiophene >2,5-disustituted furan and 1,3,4-thiadiazole >1,3,4-oxadiazole. 相似文献
3.
分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上,采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se2薄膜,用X射线衍射仪测量薄膜的织构,研究衬底对Cu(In,Ga)Se2薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se2薄膜的(112)衍射峰强度依次逐渐减弱,(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se2关键词:
择优取向
Cu(In
2薄膜')" href="#">Ga)Se2薄膜
太阳电池 相似文献
4.
在室温条件下的激光晶体MgF2单晶中,实验发现含有130多条峰的电子自旋共振(ESR)波谱。两个样品分别取自MgF2单晶生长放肩的尖锥部位和MgF2:Co晶体.两个样品都没有经过任何辐照处理。两个样品具有相同的各向异性谱,说明掺入的Co2+离子引发了与MgF2单晶放肩部位相同的位错缺陷,产生了相同的多核固体自由基。这些顺磁固体自由基稳定且寿命长,产生的ESR信号是各向异性的。经初步计算拟合,谱线是由三种不同的多核自由基产生的。当磁场方向与晶体的[100]或[010]方向平行时,样品的ESR信号出现在磁场从0.2292特斯拉(T)到0.4654T的0.2362T范围内(相当于能带宽度为0.233eV)。最窄的线宽DH约为0.00128特斯拉,DH相当于相邻的能级差,是非常小的,仅有1.85×10-7eV 或1.46×10-3cm-1。这一事实表明其基态简并度是相当高的,在不太高的直流磁场下几乎是一个由准连续的能级组成的能带。这有可能成为可调谐的固体激光介质的新基点。 相似文献
5.
Preparation of Cu(In,Ga)Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere 总被引:1,自引:0,他引:1
下载免费PDF全文
![点击此处可从《中国物理快报》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Cu(In, Ga)Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu(In,Ga)Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu(In, Ga)Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized. 相似文献
6.
7.
Yin P Pradeep CP Zhang B Li FY Lydon C Rosnes MH Li D Bitterlich E Xu L Cronin L Liu T 《Chemistry (Weinheim an der Bergstrasse, Germany)》2012,18(26):8157-8162
An organic-inorganic molecular hybrid containing the Dawson polyoxometalate, ((C(4)H(9))(4)N)(5)H[P(2)V(3)W(15)O(59)(OCH(2))(3)CNHCOC(15)H(31)], was synthesized and its surfactant-like amphiphilic properties, represented by the formation of bilayer vesicles, were studied in polar solvents. The vesicle size decreases with both decreasing hybrid concentration and with increasing polarity of the solvent, independently. The self-assembly behavior of this hybrid can be controlled by introducing different counterions into the acetonitrile solutions. The addition of ZnCl(2) and NaI can cause a gradual decrease and increase of vesicular sizes, respectively. Tetraalkylammonium bromide is found to disassemble the vesicle assemblies. Moreover, the original counterions of the hybrid can be replaced with protons, resulting in pH-dependent formation of vesicles in aqueous solutions. The hybrid surfactant can further form micro-needle structures in aqueous solutions upon addition of Ca(2+) ions. 相似文献
8.
9.
Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect. 相似文献
10.