Synthèse de nouveaux dérivés tétrahydroquinoléines et quinoléines via la réaction d'aza-Diels-Alder suivie d'aromatisation

The Aza-Diels-Alder reaction of aldimines with isoeugenol is described. New 1,2,3,4-tetrahydroquinoline and quinoline structures are reported. The stereo- and regioselectivities of the [4+2] cycloaddition are discussed.     

Electrical and thermal properties of chalcogenide glass system Se75Ge25−x Sb x

The dc and thermal conductivities of five different compositions of the chalcogenide glass system Se₇₅Ge_25–x Sb _x have been studied in a temperature range below T _g. The dc conductivity results indicate that each composition has a single activation energy in the considered temperature range. The coefficient of thermal conductivity increased linearly with temperature below T _g for the compositions investigated. The increase of Sb content in the chalcogenide glass system leads to an increased coefficient of electrical conductivity , an increased coefficient of thermal conductivity , and to a decreased activation energy E and pre-exponential factor ₀. The observed compositional dependencies of and E have been correlated with the increase of weak bond density and the decrease of covalent bond density in the structure of the compositions investigated with increasing Sb content at the expense of Ge content. The decrease in ₀ and the increase in has been, respectively, correlated with the decrease in mobility and the increase in phonon velocity.     

Structural study of the smectic phases of several 4-cyanoalkoxybenzylidene-4'-alkylanilines

Abstract

A series of 4-cyanoalkoxybenzylidene-4'-alkylanilines (CN-nO. m; n = 3, 4, 6 and m = 4, 5, 8) have been synthesized. Their thermotropic liquid-crystalline polymorphism has been investigated using optical microscopy, differential scanning calorimetry and dilatometry. Nematic, smectic A and smectic B mesophases have been identified. The structure of the smectic phases has been studied with X-ray diffraction. Depending upon the compound and the temperature, the smectic layers have been found to be either single (A₁) or double (A₂) layers of molecules. Unexpected from a simple comparison with the well-known behaviour of the very similar nO. m smectogens, which belong to the class of the so-called symmetric and therefore exhibit single-layered smectics only, this structural behaviour has been interpreted to mean the importance of the dipole interactions of the terminal cyano groups. For CN-60.8, a transition has been detected at 64°C between the single and double layered structure.     

Negative capacitance of ZnGa2Se4/Si nano-heterojunction diode

The negative capacitance (NC) behavior in p-ZnGa₂Se₄/n-Si nano-crystalline HJD was characterized by admittance-voltage method. The C–V, G–V and R _s –V for the studied diode were analysed in the frequency range of 1–5 MHz and in the temperature range of 303–423 K. The capacitance and conductance plots were interpreted in terms of interface states and series resistance. The C–V and G/ω–V plots exhibit a pounced peak due to the interface states and the series resistance effects. The negative capacitance behavior in the studied diode can be explained in terms of the transient currents.     

Investigation of solid-state reaction in Ag/Sn nanostructured thin films at room temperature

Diffusion intermixing processes in nanostructured Ag/Sn thin-film system at room temperature were investigated by means of secondary neutral mass Spectrometry depth profiling technique. As it was confirmed by X-ray diffraction too, the reaction started already in the as-deposited sample. Since the bulk diffusion was frozen at room temperature, the Ag₃Sn phase was formed along the grain boundaries (GBs), gradually consuming the interior of grains, and was grown perpendicular to the GBs. At the same time, formation and growth of a small compact reaction layer near the interface were observed and the shift of the bordering parallel interfaces was controlled by GB diffusion. From the kinetics of the diffusion process in the above two mechanisms, both the interface velocity in the diffusion-induced grain boundary motion regime as well as the coefficient of parabolic growth in the planar growth regime were determined.     

Advances on the Determination of the Astatine Pourbaix Diagram: Predomination of AtO(OH)2− over At− in Basic Conditions

It is generally assumed that astatide (At^?) is the predominant astatine species in basic aqueous media. This assumption is questioned in non‐complexing and non‐reductive aqueous solutions by means of high‐pressure anion‐exchange chromatography. Contrary to what is usually believed, astatide is found to be a minor species at pH=11. A different species, which also bears a single negative charge, becomes predominant when the pH is increased beyond 7. Using competition experiments, an equilibrium constant value of 10^?6.9 has been determined for the formation of this species from AtO(OH) with the exchange of one proton. The identification of this species, AtO(OH)₂^?, is achieved through relativistic quantum mechanical calculations, which rule out the significant formation of the AtO₂^? species, while leading to a hydrolysis constant of AtO(OH) in excellent agreement with experiment when the AtO(OH)₂^? species is considered. Beyond the completion of the Pourbaix diagram of astatine, this new information is of interest for the development of ²¹¹At radiolabeling protocols.     

High‐order finite difference schemes for incompressible flows

This paper presents a new high‐order approach to the numerical solution of the incompressible Stokes and Navier–Stokes equations. The class of schemes developed is based upon a velocity–pressure–pressure gradient formulation, which allows: (i) high‐order finite difference stencils to be applied on non‐staggered grids; (ii) high‐order pressure gradient approximations to be made using standard Padé schemes, and (iii) a variety of boundary conditions to be incorporated in a natural manner. Results are presented in detail for a selection of two‐dimensional steady‐state test problems, using the fourth‐order scheme to demonstrate the accuracy and the robustness of the proposed methods. Furthermore, extensions to higher orders and time‐dependent problems are illustrated, whereas the extension to three‐dimensional problems is also discussed. Copyright © 2010 John Wiley & Sons, Ltd.     

Electrical and thermal properties of Ge40S60 films

Films of the composition Ge₄₀S₆₀ have been studied in the temperature range of 313–423 K for electrical conductivity, and 293–373 K for thermal conductivity. The dc conductivity results indicate a single value activation energy of 0.863 eV for the conductivity in the applied temperature range. The thermal conductivity coefficient increases linearly with temperature at a thickness of d=0.311 cm. It was found that the investigated samples show a memory effect. The threshold switching voltage was found to increase linearly with film thickness. Moreover, the threshold voltage decreases exponentially with temperature. The data are analysed using a thermal model for the switching process.     

Relaxation and thermodynamic parameters of the theory of spin-wave damping in low-dimensional magnetic materials

Several basic parameters of the surface spectrum of a system are estimated with respect to the spin-spin interaction. An expression for the surface relaxation time and its numerical estimation are given. The dependence of the relaxation time on the geometric factor determined by the surface geometry only is presented. The conditions for the resonance absorption of spin-wave energy by the surface are considered. Certain expressions for the thermodynamic potentials taking the effect of surface resonance on the equilibrium properties of the system into account are given.