排序方式: 共有33条查询结果,搜索用时 218 毫秒
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Eves BJ Sun QY Lopinski GP Zuilhof H 《Journal of the American Chemical Society》2004,126(44):14318-14319
Photochemical reactions of terminal alkenes with hydrogen-terminated silicon surfaces are being used by many groups to produce covalently attached organic monolayers with a wide range of terminal functionalities. Despite the considerable activity in this area, the mechanism for these reactions has not been definitively established. Here we present STM and HREELS data on a sequence of partially reacted samples, showing the progress of the reaction. The attachment reaction is found to proceed via formation of irregularly shaped islands that appear to grow by a pseudorandom walk process. These data support a radical chain propagation mechanism previously suggested for this reaction. However, since the photons employed here (447 nm) lack sufficient energy for Si-H bond cleavage, an alternate mechanism for initiating the chain reaction appears to be required. 相似文献
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Isoperimetric inequalities are applied to a moving-boundaryproblem for doubly-connected domains. This problem occurs forexample in electrochemistry, in which case the domains in questionare the electrolyte of an electrolytic cell. The two electrodessurrounding the electrolyte are assumed to grow or dissolve,at different rates in general, by electrochemical reaction.We obtain optimal estimates showing, for example, that the leastchange in volume of each electrode always occurs in sphericalsymmetry. 相似文献
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Dative bonding of nitrogen-containing heterocycles offers a strategy for the controlled attachment of aromatic molecules to silicon surfaces. However, while scanning tunneling microscopy shows that pyridine on clean Si(100) initially binds via a dative bonding configuration, slow conversion to a more stable bridging state, destroying the aromaticity, is observed. To restrict adsorption to the dative bonded form, we investigated the interaction of pyridine with isolated reactive sites on partially H-terminated Si(100). While dative bonding on isolated clean dimers is observed, single dangling bonds remain unreacted. This selectivity can be accounted for by the ability of the Si-Si dimers to act as electron acceptors that stabilize the dative bonded species. This observation has important implications for the controlled positioning of single molecules on silicon via dative bonding. 相似文献
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John L. Eves Naoise Grisewood Remo Hügli Hans-Benjamin Braun 《Journal of magnetism and magnetic materials》2010,322(9-12):1381-1384
Magnetic domain wall racetrack memory samples allow for the controlled motion of isolated magnetic domain walls in a quasi one-dimensional geometry. Here we consider the possibility of the dynamical formation of bound states of domain walls that can be prepared via a suitably chosen external field. Upon switching off the external field, these domain walls oscillate around their common center of mass, with a frequency depending on the relative initial handedness of the domain wall. Such breather states may be observed by detecting the resulting magnetization oscillations. 相似文献