On the continuation for variational inequalities depending on an eigenvalue parameter

In this paper we generalize recent theoretical results on the local continuation of parameter-dependent non-linear variational inequalities. The variational inequalities are rather general and describe, for example, the buckling of beams, plates or shells subject to obstacles. Under a technical hypothesis that is satisfied by the simply supported beam, we obtain the existence of a continuation of both the solution and the eigenvalue with respect to a local parameter. A numerical continuation method is presented that easily overcomes turning points. Numerical results are presented for the non-linear beam.     

Standardization of Methods for Characterizing the Surface Geometry of Solids

Since a comprehensive survey published in 1999 [1] much work was done in standardizing measuring methods to characterize the surface geometry of dispersed and/or porous solids and to certify reference materials. The present paper is an extension of a short communication [2]. It gives a survey on existing standards and reports on new drafts and proposals.     

The use of an atomizer for chemical pleurodesis

Summary An atomizer had been designed that could create an aerosol of a liquid with high viscosity. The amount of additional driving gas that had to be used was very low. In a cooperation with the University Hospital in Zurich the atomizer was miniaturized and used for treating six patients.     

Polarization inscription in ferroelectric (111) PZT and (100) SBT films

Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch². Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular.     

Chaotic resonance: A simulation

Stochastic resonance is a statistical phenomenon that has been observed in periodically modulated, noise-driven, bistable systems. The characteristic signatures of the effect include an increase in the signal-to-noise of the output as noise is added to the system, and exponentially decreasing peaks in the probability density as a function of residence times in one state. Presented are the results of a numerical simulation where these same signatures were observed by adding achaotic driving term instead of a white noise term. Although the probability distributions of the noise and chaos inputs were significantly different, the stochastic and chaotic resonances were equal within the experimental error.     

An almost sure invariance principle for stationary ergodic sequences of Banach space valued random variables

Summary In this paper we establish an almost sure invariance principle with an error termo((t log logt)^1/2) (ast) for partial sums of stationary ergodic martingale difference sequences taking values in a real separable Banach space. As partial sums of weakly dependent random variables can often be well approximated by martingales, this result also leads to almost sure invariance principles for a wide class of stationary ergodic sequences such as ø-mixing and -mixing sequences and functionals of such sequences. Compared with previous related work for vector valued random variables (starting with an article by Kuelbs and Philipp [27]), the present approach leads to a unification of the theory (at least for stationary sequences), moment conditions required by earlier authors are relaxed (only second order weak moments are needed), and our proofs are easier in that we do not employ estimates of the rate of convergence in the central limit theorem but merely the central limit theorem itself.     

Otpically illuminated dielectric interfaces as high-speed far-infrared modulators

A new device for the gigahertz modulation of far-infrared radiation is analytically and numerically analyzed. It consists of a thin layer of a high-mobility, direct-bandgap semiconductor, such as GaAs, in which a high-density electron-hole plasma is rapidly created and destroyed, thereby rapidly changing the free-carrier reflectivity of the active layer. Illumination by a high-power, near-infrared laser diode array generates the plasma through intrinsic photoconduction. It is shown that this device acis primarily as an amplitude modulator, and that its efficiency increases sharply with increasing far-IR frequency, in contrast to a Schottky diode, which acts primarily as a phase modulator, and whose efficiency falls off sharply with far-IR frequency. The breakeven frequency lies at about 1.5 THz, depending slightly on the assumed device parameters. The relative advantage of the new device increases rapidly with increasing far-infrared frequency. At an operating frequency of 2.5 THz (119 m), for example, a 1 GHz modulation bandwidth may be achieved with a single-sideband conversion loss of only-21 db, versus a Schottky's loss of-39 db, assuming a laser diode power of 1 W, which is readily available from recently developed laser diode arrays.