Study of the reactione + e −→K + K − in the energy range1350 \leqq \sqrt s \leqq 2400 MeV

Thee ⁺ e ^?→K ⁺ K ^? cross section has been measured from about 750 events in the energy interval \(1350 \leqq \sqrt s \leqq 2400 MeV\) with the DM2 detector at DCI. TheK ^± form factor |F _F ^±| cannot be explained by the ρ, ω, ? and ρ′(1600). An additional resonant amplitude at 1650 MeV has to be added as suggested by a previous experiment.     

Radiative decay ofJ/ψ into γ π+ π−

The radiative decayJ/ψ → γ π⁺ π^? has been studied using the 8.6 millionJ/ψ produced in the DM2 experiment at the DCIe ⁺e^? storage rings at Orsay. The π⁺ π^? mass spectrum shows a cleanf ₂ (1270) signal, and the possible presence of two other states at thef ₂ (1720) andf ₄ (2030) masses. For thef ₂ (1270), the branching ratio BR(J/ψ →γf)xBR(f→π⁺ π^?) is measured to be (7.50±0.30±1.12)×10^?4, and the spin analysis prefers theJ=2 assignment, with helicity parametersx=0.83±0.06 andy=0.01±0.06. The existence of higher mass states is discussed.     

Non-planar smoulder propagation governed by diffusion

The steady propagation of a thin smouldering front in a half-spacehas been considered. A suitable coordinate transformation hasallowed the region near the leading edge of the front to beexamined for both a maintained planar surface and with surfacecollapse due to material shrinkage. The change in the oxidizerconcentration for a small increment in the propagation speedfor large time and surface collapse has been determined. Theinfluence of two types of nonlinear diffusion on the shape ofthe smouldering front has been found; other cases can be dealtwith in a similar manner.     

Interaction of scanning probes with semiconductor nanocrystals; physical mechanism and basis for near-field optical imaging

We investigate the modification of photoluminescence (PL) from single semiconductor nanocrystal quantum dots (NCs) in the proximity of metal and semiconducting atomic force microscope (AFM) tips. The presence of the tip alters the radiative decay rate of an emitter via interference and opens efficient nonradiative decay channels via energy transfer to the tip material. These effects cause quenching (or enhancement) of the emitter's PL intensity as a function of its distance from the interacting tip. We take advantage of this highly distance-dependent effect to realize a contrast mechanism for high-resolution optical imaging. AFM tips are optimized as energy acceptors by chemical functionalization with InAs NCs to achieve optical resolution down to 30 nm. The presented experimental scheme offers high-resolution optical information while maintaining the benefits of traditional AFM imaging. We directly measure the PL intensity of single NCs as a function of the tip distance. Our results are in good agreement with calculations made by a classical theoretical model describing an oscillating dipole interacting with a planar mirror.     

KMgF3:Ni2+晶体的占位、局部结构、吸收光谱和顺磁g因子的统一解释

利用完全对角化方法和强场耦合方案,采用半自洽场(semi-SCF)自由Ni2+的d轨道模型和Ni2+-6X-(x=F,Cl,Br,I)络合物的μ-κ-α模型研究,建立了含有过渡族金属离子的晶体的局域结构与吸收光谱和顺磁g因子之间的定量关系,对KMgF3:Ni2+晶体的占位、局域结构、吸收光谱和顺磁g因子作出了统一解释,预测了KMgF3:Ni2+晶体的光谱精细结构.所得理论计算结果与实验值符合得很好.     

A comparison of JKR-based methods to analyze quasi-static and dynamic indentation force curves

The Johnson-Kendall-Roberts (JKR) theory of elastic contact, extended to take viscoelastic effects into account, is used to evaluate work of adhesion and modulus of elastomeric films. In this paper, we present a comparison of five approaches to analyze quasi-static and dynamic JKR force curve data obtained using instrumented indentation. The load-displacement experiments were performed using a 200-microm radius borosilicate glass sphere against poly(dimethyl siloxane) (PDMS). By applying a small oscillation to the tip during indentation, dynamic stiffness vs load data were also obtained for frequencies between 25 and 160 Hz. Direct curve fitting as well as simplified 2- and 3-point analysis methods were used to compare modulus values obtained from load-displacement and stiffness-load data. Fit methods not requiring determination of the initial point of tip-sample contact ("zero" displacement) provided modulus values closest to those obtained by direct curve fitting. The dynamic stiffness-load data revealed a frequency dependent modulus; load-displacement measurements obtained simultaneously were consistent with the relaxed, or low-frequency, modulus of the PDMS sample. These experiments demonstrate that both the frequency dependent and relaxed modulus can be obtained from a single experiment.     

Baryon pairs production ine + e − annihilation at\sqrt s = 2.4 GeV

Search for baryon pairs production ine ⁺ e ^? annihilation at \(\sqrt s = 2386 MeV\) is reported. The data relate to a luminosity of 161 nb^?1 collected by the DM2 experiment at DCI, the Orsay colliding ring. First measurements of directe ⁺ e ^? annihilation into \(\Lambda \bar \Lambda \) and ofe ⁺ e ^?→ \(p\bar p\) at this energy are presented. First observation of a goode ⁺ e ^?→ \(n\bar n\) candidate is reported and upper limits are given fore ⁺ e ^?→ \(n\bar n, \Lambda \bar \sum ^0 + c.c.\) and \(\Sigma ^0 \bar \Sigma ^0 \) .