Non-invasive determination of ethanol, propylene glycol and water in a multi-component pharmaceutical oral liquid by direct measurement through amber plastic bottles using Fourier transform near-infrared spectroscopy

Fourier transform near-infrared (FT-NIR) spectroscopy was used to quantify rapidly the ethanol (34-49% v/v), propylene glycol (20-35% v/v) and water (11-20% m/m) contents within a multi-component pharmaceutical oral liquid by measurement directly through the amber plastic bottle packaging. Spectra were collected in the range 7302-12,000 cm-1 and calibration models set-up using partial least-squares regression (PLSR) and multiple linear regression. Reference values for the three components were measured using capillary gas chromatography (ethanol and propylene glycol) and Karl Fischer (water) assay procedures. The calibration and test sets consisted of production as well as laboratory batches that were made to extend the concentration ranges beyond the natural production variation. The PLSR models developed gave standard errors of prediction (SEP) of 1.1% v/v for ethanol, 0.9% v/v for propylene glycol and 0.3% m/m for water. For each component the calibration model was validated in terms of: linearity, repeatability, intermediate precision and robustness. All the methods produced statistically favourable outcomes. Ten production batches independent of the calibration and test sets were also challenged against the PLSR models, giving SEP values of 1.3% v/v (ethanol), 1.0% v/v (propylene glycol) and 0.2% m/m (water). NIR transmission spectroscopy allowed all three liquid constituents to be non-invasively measured in under 1 min.     

Piecewise optimal linearization method for nonlinear stochastic differential equations

A method for estimating the dynamical statistical properties of the solutions of nonlinear Langevin-type stochastic differential equations is presented. The non-linear equation is linearized within a small interval of the independent variable and statistical properties are expressed analytically within the interval. The linearization procedure is optimal in the sense of the Chebyshev inequality. Long-term behavior of the solution process is obtained by appropriately matching the approximate solutions at the boundaries between intervals. The method is applied to a model nonlinear equation for which the exact time-dependent moments can be obtained by numerical methods. The calculations demonstrate that the method represents a significant improvement over the method of statistical linearization in time regimes far from equilibrium.Supported in part by the National Science Foundation under Grants CHE77-16307 and PHY76-04761.     

Effect of inter-miniband tunneling on current resonances due to the formation of stochastic conduction networks in superlattices

We study the effects of inter-miniband electron tunneling and electric field domains on the current–voltage and conductance–voltage curves of biased semiconductor superlattices under the action of a magnetic field that is tilted relative to the plane of the layers. For this geometry, electrons in the superlattice minibands exhibit a unique type of stochastic semiclassical motion. At certain critical values of the electric field within the superlattice layers, the stochastic trajectories change abruptly from fully localized to completely unbounded, and map out an intricate web-like mesh of conduction channels in phase space. Delocalization of the electron paths produces a series of strong resonant peaks in the electron drift velocity versus electric field curves. We use these drift velocity characteristics to make self-consistent drift-diffusion calculations of the current–voltage and differential conductance–voltage curves of the superlattices, which reveal strong resonant features originating from the sudden delocalization of the stochastic single-electron paths. We show that this delocalization has a pronounced effect on the distribution of space charge and electric field domains within the superlattices. Inter-miniband tunneling greatly reduces the amount of space-charge buildup, thus enhancing the domain structure and both the strength and number of the current resonances.     

Far infrared photoconductivity from majority and minority impurities in high purity Si and Ge

The effects of intrinsic illumination on the far infrared photoconductivity of high purity Si and Ge are studied. Such illumination permits the observation of both the majority and minority impurities. One of the donors in Ge is highly sensitive to heat treatment, a result suggesting that it arises from lattice defects rather than chemical impurities.