Single-pulse multiphoton fabrication of high aspect ratio structures with sub-micron features using vortex beams

Single ultra-short pulses from Gaussian and vortex beams have been used for the fabrication of complex micro-structures via multi-photon polymerization. The complexity of the resultant micro-structures stems from the modification of both transverse intensity and phase profiles of these single pulses to create modulated scaffolds and hollow cylinders. Experimental results are compared to theoretical models, and good agreement is shown.     

Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric properties

We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi₂Te₃, Bi₂Se₃ and Bi_0.5Sb_1.5Te₃) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ～15 mm² in size. A morphological study showed that it was possible to partially preserve the polycrystalline structure of the transferred films. The films’ Seebeck coefficients after LIFT transfer were measured and resulted in ?49±1 μV/K, ?93±8 μV/K and 142±3 μV/K for Bi₂Te₃, Bi₂Se₃ and Bi_0.5Sb_1.5Te₃, respectively, which were found to be ～23±6 % lower compared to their initial values. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ～15 mm² with minimal damage onto a non-standard polymer-coated substrate.     

Multiplicity structure of proton and kaon diffractive dissociation in 10 and 16 GeV/c K-p interactions

A new method to calculate diffractive mass spectra has been developed. It is applied to K^-p interactions at 10 and 16 GeV/c. Cross sections and mass spectra are given for the difractive dissociation processes p→(N+iπ) and K^-p→(K+iπ) for i = 1 to 5 and also summed over all multiplicities. In addition to the diffractive peak at low mass coming from low multiplicities, a long tail extending to high masses and high multiplicities has been found. The multiplicity structure of diffraction dissociation can be understood in the context of the two-step dynamical picture of Pokorsky and Van Hove.     

Propagation of waves from spherical and cylindrical cavities

Résumé L'auteur examine la propagation des ondes d'une cavité sphérique ou cylindrique dans une substance avec une isotropie transversale et curviligne. Il traite d'une manière assez détaillée le cas particulier d'un solide infini dans lequel existe un trou sphérique ou cylindrique, et les résultats numériques sont donnés sous une forme graphique pour le trou cylindrique avec un démarrage à fonction type unitaire.     

Study of proton dissociation into ΛK+ in 3-body final states at 10 and 16 GeV/c

Results are presented for p → (ΛK⁺) dissociation in the reactions K^?p → ΛK⁺K^? and and π^±p → ΛK⁺π^±at 10 and 16 GeV/c. The cross sections for the low-mass ΛK⁺ enhancement are compatible with the energy dependence σ ∝ p_lab^?0.3. The t′ spectra or the (ΛK⁺) threshold enhancement are exponential in shape. Its decay angular distribution reveals neither s-channel nor t-channel helicity conservation. The relative probabilities of the processes $\text{p}\text{→}\text{p, p}\text{→ (}\text{N}\text{π)}{}_{\mathrm{<mtext>I=</mtext><mtext>1</mtext><mtext>2</mtext>}}\text{and p}\text{→ (Λ}\text{K}{}^{\mathrm{+}}\text{)}$ dissociation are in the ratios 100 : 10 : 0.2, independent of the nature of the incident particle.     

The effects of temperature and frequency on the magnetization switching mode in circular MI sensors

This paper presents results computed using a meshless method in a point collocation formulation to investigate the effects of temperature and frequency on the magnetization switching mode in the circular amorphous magneto-impedance sensor (element). Specifically, the solutions characterizing the MI effect are solved from a set of coupled nonlinear equations consisting of the Maxwell’s equations, the Landau-Lifshitz-Gilbert equation, and the thermal diffusion equation. This coupled nonlinear space-time model predicts the formation and propagation of dynamic domain walls in switching and it is shown how they contribute to experimentally observed temperature and frequency effects. Computed results (that agree well with reported experimental data) suggest radial domain walls may play a larger role in the MI effect than originally believed even for the realistic conditions considered here at 1 MHz or more.     

Recent atomic clock comparisons at NIST

The record of atomic clock frequency comparisons at NIST over the past half-decade provides one of the tightest constraints of any present-day temporal variations of the fundamental constants. Notably, the 6-year record of increasingly precise measurements of the absolute frequency of the Hg⁺ single-ion optical clock (using the cesium primary frequency standard NIST-F1) constrains the temporal variation of the fine structure constant α to less than 2 · 10⁻⁶yr⁻¹ and offers a Local Position Invariance test in the framework of General Relativity. The most recent measurement of the frequency ratio of the Al⁺ and Hg⁺ optical clocks is reported with a fractional frequency uncertainty of ±5.2 · 10⁻¹⁷. The record of such measurements over the last year sensitively tests for a temporal variation of α and constrains , consistent with zero.     

Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>

We have demonstrated pulsed laser deposition of Nd-doped gadolinium gallium garnet on Y₃Al₅O₁₂ by the simultaneous ablation of two separate targets of Nd:Gd₃Ga₅O₁₂ (GGG) and Ga₂O₃. Such an approach is of interest as a method of achieving stoichiometry control over films whilst the growth parameters are kept constant and optimal for high quality crystal growth. We show here how the stoichiometry and resultant lattice parameter of a film can be controlled by changing the relative deposition rates from the two targets. Films have been grown with enough extra Ga to compensate for the deficiency that commonly occurs when depositing only from a GGG target. We have also grown crystalline GGG films with an enriched Ga concentration, and this unconventional approach to film stoichiometry control may have potential applications in the fabrication of films with advanced compositionally graded structures.     

Ti:sapphire planar waveguide laser grown by pulsed laser deposition

We document the lasing performance of a waveguiding layer of Ti:sapphire, of ~12-mum thickness, grown by pulsed laser deposition from a 0.12-wt.% Ti(2)O(3) Ti:sapphire single-crystal target onto an undoped z-cut sapphire substrate. Lasing around 800 nm is observed when the waveguide layer is pumped by an argon-ion laser running on all-blue-green lines, with an absorbed power threshold of 0.56 W, with high-reflectivity (R>98%) mirrors. With a 5% pump duty cycle and a T=35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-cw output powers in excess of 350 mW.