Synthesis,Electronic Properties and WOLED Devices of Planar Phosphorus‐Containing Polycyclic Aromatic Hydrocarbons

We describe the synthesis and the physical properties of polyaromatic hydrocarbons (PAHs) containing a phosphorus atom at the edge. In particular, the impact of the successive addition of aromatic rings on the electronic properties was investigated by experimental (UV/Vis absorption, fluorescence, cyclic voltammetry) and theoretical studies (DFT). The physical properties recorded in solution and in the solid state showed that the P‐containing PAHs exhibit properties expected for an emitter in white organic light‐emitting diodes (WOLEDs).     

Study of the charge-exchange reactions\pi ^ - p \to (\pi ^0 ,\eta ,\eta \prime )n at 63 GeV

Muon electron pairs were detected in an Al multiplate spark chamber, exposed to a neutrino beam from the CERN PS. The leptons were not accompanied by other particles, except occasionally by protons. The background came mainly from muon associated π⁰ production, with one decay gamma lost. It was determined empirically, together with the small contribution from υ _e reactions. For electron energies above 2 GeV the background is 5.7±1.5 events, whereas 18 (μe)-candidates have been observed. Hence the effect is established, with a rate of about 10^?4 as compared to the muonic reactions above 3 GeV. Charm creation as the origin of this (μe)-production process is excluded; heavy neutral lepton production does not fit the kinematics observed. Instead the events are compatible with the two-body decay of an object with variable invariant mass of order 1 GeV, possibly resulting from axion interactions.     

Obituary Gilbert Grynberg (1948-2003)

We mourn the death of Professor Dr. Gilbert Grynberg, April 17, 1948 - January 27, 2003. We have lost an excellent and highly esteemed scientist, an outstanding character and a good friend. He has been a very active colleague in the merger of Zeitschrift für Physik and Journal de Physique in the early days. As one of the Co-Editors-in-Chief of The European Physical Journal D, from its start, he has formed the scienti.c standards of EPJ. Untiringly he has served our Journal with greatest dedication. We are grateful that he has been with us. The editorial board and o.ce of EPJ B Siegfried Grossmann, Denis Jérome, Antonio Paoletti     

Micellar effect in hydroformylation of high olefin catalysed by water-soluble rhodium complexes associated with sulfonated diphosphines

High linear alkenes (1-octene and 1-decene) have been hydroformylated using water-soluble rhodium complexes associated with sulfonated diphosphines in the presence of ionic surfactants or methanol. In all cases, the hydroformylation activities were higher than in experiments without additives. The selectivity in aldehydes was higher when we used cetyltrimethylammonium hydrogensulfate (CTAHSO₄) as the surfactant or methanol as the co-solvent.     

On the distribution of the number of customers in the symmetric M/G/1 queue

We consider an M/G/1 queue with symmetric service discipline. The class of symmetric service disciplines contains, in particular, the preemptive last-come-first-served discipline and the processor-sharing discipline. It has been conjectured in Kella et al. [1] that the marginal distribution of the queue length at any time is identical for all symmetric disciplines if the queue starts empty. In this paper we show that this conjecture is true if service requirements have an Erlang distribution. We also show by a counterexample, involving the hyperexponential distribution, that the conjecture is generally not true. AMS Subject Classifications Primary—60K25; Secondary—90B22     

Uniform non-amenability of free Burnside groups

The aim of this paper is to show that free Burnside groups of sufficiently large odd exponent are non-amenable in a certain strong sense. More precisely their left regular representations are isolated from the trivial representation uniformly on finite generating sets. It follows that free Burnside groups are of uniform exponential growth. This answers a question of de la Harpe. This work has been partially supported by the NSF grant DMS-0605093 and by the RFBR Grant # 05-01-00892. Received: 25 April 2006     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.