CO2激光外差接收的实时强度成像

利用国内的元器件建立了声光调制CO_2激光外差接收系统,并进行了实验室内静止目标的实时强度成像,成像距离3m,成像视场7°× 5°,像素128×98,4个颜色梯度显示像强度.     

层状锑磷酸嵌接式卟啉锰制备与模拟细胞色素氧化催化研究

层状锑磷酸嵌接式卟啉锰制备与模拟细胞色素氧化催化研究胡希明，皮宗新，梅治乾，古国榜，黄仲涛（华南理工大学应用化学系，华南理工大学化学工程系，广州，５１０６４１）关键词卟啉锰，层状锑磷酸，嵌接，催化性能细胞色素Ｐ４５０是一种含血红素的单充氧化酶，在室温...     

Alkaloids from Fritillaria Hupehensis

Phytochemical investigation of the bulbs of Fritillaria hupehensis resulted in the isolation and structural elucidation of a new highly conjugated alkaloid of veratramine type identified as 3β,23β-dihydroxy-7,12（14）-dien-5α- veratramin-6-one （1）, together with two known alkaloids, ebeinine （2） and zhebeinine （3）, which were isolated for the first time from F. hupehensis. The structures of alkaloids 1-3 were established by extensive 1D and 2D NMR spectral analyses.     

Effect of substituents in the ring on the structure and electron density distribution in benzyl halides

The results of calculations for benzyl chlorides and benzyl bromides that contain substituents in the ring by different quantum-chemical methods are compared. The electron density on the benzyl carbon atom increases as the electron-withdrawing properties of substituents are enhanced due to the shift of the electron density from the benzyl halogen atom to the adjacent carbon atom. A topological analysis according to Bader confirmed the main reason for the change in the paramagnetic shielding of the benzyl¹³C nuclei. The results of calculations provide, for the first time, an explanation for the resonance upfield¹³C shift of this atom as the Hammett constant of a substituent increases in compounds of the series under consideration. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 12, pp. 2111–2119, December, 1997.     

高效液相色谱-荧光检测法测定敬钊毒素-I的磷脂膜结合活性

敬钊毒素-I(JZTX-I)是一种能够抑制心肌钠通道失活的新型蜘蛛神经毒素,该文结合高效液相色谱与色氨酸荧光测定技术研究了JZTX-I的磷脂膜结合活性。脂质体共沉淀实验表明,JZTX-I具有不依赖于带负电荷磷脂组成的生物膜结合活性。当加入由酸性或中性磷脂构成的脂质体后,JZTX-I能够分别产生6.4和4.7nm的蓝移以及7.4和8.0nm的红移激发漂移,显示JZTX-I能够插入磷脂膜,同时该分子疏水表面的色氨酸残基处于一个运动受限的界面区域。荧光淬灭实验进一步证实,与脂质体结合能够减少该毒素分子表面色氨酸残基的溶剂暴露。该研究结果为阐明JZTX-I的离子通道门控调节机制提供了新的信息。     

Structures and hardness of ethyl halides and ethyl tosylate

Ab initio calculations (RHF) of EtX molecules (X=F, Cl, Br, I, or OTs) were carried out with the use of different basis sets. Total charges on the atoms in the compounds under study were determined by Mulliken's, NPA, and Bader's methods, and a comparison of these values was performed. For all EtX compounds, a topological analysis of the electron density was carried out within the framework of Bader's theory, and the global and relative local hardnesses of the above-mentioned ethylating agents were estimated. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 608–612, April, 1998.     

Investigation of Aconitine-type Alkaloids from Processed Tuber of Aconitum carmiechaeli by HPLC-ESI-MS/MS~n

Introduction Aconitine-type alkaloids isolated from the roots of Aconitum carmiechaeli show a potential toxicity and a broad spectrum of bioactivity[1-4].On the basis of the C8-substituent of C19-diterpenoid skeleton,aconitine-type alkaloids can be divided into diester-diterpenoid alkaloids(DDAs),monoester-diterpenoid alkaloids(MDAs),and lipo-alkaloids(Fig.1).     

己内酰胺的聚合——Ⅳ.一元羧酸对聚合过程所发生的作用

己内酰胺在苯甲酸和6-氨基己酸存在下的聚合反应,实验结果表明苯甲酸具有引发 单体聚合、酸解大分子链和酰化大分子的氨基的作用。反应的开始为催化引发单体生成大分子链而不是苯甲酸与单体的加成。随着大分子的增多,酸解和酰化也同时发生。在反应半小时后酸解的影响逐渐显著,到3—4小时以后,酸解影响超过缩聚使聚合物分子量下降羧基含量增加。到反应7—8小时后,聚合物生成量及分子量已达恒定而酰化仍继续进行。到反应达到平衡时,仍然有游离的苯甲酸,聚合物中仍有游离的氨基和羧基,说明酸解、酰化与缩聚都是可逆反应。 在不用苯甲酸的己内酰胺与水的聚合实验中,聚合物虽在常压通氮的情况下在250°,270°或300°加热6小时分子量仍能稳定在一定数值而不升高,即加热15小时(250°)变化也很小。氨基与羧基不再进行缩聚,可能系由于反应系统粘稠,水分子不易扩散除去,大分子不易移动接触,功能基又受本身分子链的空间阻碍,使反应不易继续进行,维持在一定平衡状态。     

高效液相色谱-荧光检测法测定敬钊毒素-I的磷脂膜结合活性

敬钊毒素-I(JZTX-I)是一种能够抑制心肌钠通道失活的新型蜘蛛神经毒素,该文结合高效液相色谱与色氨酸荧光测定技术研究了JZTX-I的磷脂膜结合活性。脂质体共沉淀实验表明,JZTX-I具有不依赖于带负电荷磷脂组成的生物膜结合活性。当加入由酸性或中性磷脂构成的脂质体后,JZTX-I能够分别产生6.4和4.7 nm的蓝移以及7.4和8.0 nm的红移激发漂移,显示JZTX-I能够插入磷脂膜,同时该分子疏水表面的色氨酸残基处于一个运动受限的界面区域。荧光淬灭实验进一步证实,与脂质体结合能够减少该毒素分子表面色氨酸残基的溶剂暴露。该研究结果为阐明JZTX-I的离子通道门控调节机制提供了新的信息。     

基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。