Spin squeezing and quantum correlations

We discuss the notion of spin squeezing considering two mutually exclusive classes of spin-s states, namely, oriented and non-oriented states. Our analysis shows that the oriented states are not squeezed while non-oriented states exhibit squeezing. We also present a new scheme for construction of spin-s states using 2s spinors oriented along different axes. Taking the case of s=1, we show that the ‘non-oriented’ nature and hence squeezing arise from the intrinsic quantum correlations that exist among the spinors in the coupled state.     

Direct observation of defect levels in InN by soft X-ray absorption spectroscopy

We have used synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to study the electronic structure of nitrogen-related defects in InN(0001). Several defect levels within the band gap or the conduction band of InN were clearly resolved in NEXAFS spectra around the nitrogen K-edge. We attribute the level observed at 0.3 eV below the conduction band minimum (CBM) to interstitial nitrogen, the level at 1.7 eV above the CBM to antisite nitrogen, and a sharp resonance at 3.2 eV above the CBM to molecular nitrogen, in full agreement with theoretical simulations.     

Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers

Defects created in rapid thermally annealed n-GaAs epilayers capped with native oxide layers have been investigated using deep-level transient spectroscopy (DLTS). The native oxide layers were formed at room temperature using pulsed anodic oxidation. A hole trap H0, due to either interface states or injection of interstitials, is observed around the detection limit of DLTS in oxidized samples. Rapid thermal annealing introduces three additional minority-carrier traps H1 (E_V+0.44 eV), H2 (E_V+0.73 eV), and H3 (E_V+0.76 eV). These hole traps are introduced in conjunction with electron traps S1 (E_C-0.23 eV) and S2 (E_C-0.45 eV), which are observed in the same epilayers following disordering using SiO₂ capping layers. We also provide evidence that a hole trap whose DLTS peak overlaps with that of EL2 is present in the disordered n-GaAs layers. The mechanisms through which these hole traps are created are discussed. Capacitance–voltage measurements reveal that impurity-free disordering using native oxides of GaAs produced higher free-carrier compensation compared to SiO₂ capping layers. Received: 12 March 2002 / Accepted: 15 July 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +61-2/6125-0381, E-mail: pnk109@rsphysse.anu.edu.au     

Selective photon-stimulated desorption of hydrogen from GaAs surfaces

Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces.     

Sleep disturbances in highly stress reactive mice: Modeling endophenotypes of major depression

Background  

Neuronal mechanisms underlying affective disorders such as major depression (MD) are still poorly understood. By selectively breeding mice for high (HR), intermediate (IR), or low (LR) reactivity of the hypothalamic-pituitary-adrenocortical (HPA) axis, we recently established a new genetic animal model of extremes in stress reactivity (SR). Studies characterizing this SR mouse model on the behavioral, endocrine, and neurobiological levels revealed several similarities with key endophenotypes observed in MD patients. HR mice were shown to have changes in rhythmicity and sleep measures such as rapid eye movement sleep (REMS) and non-REM sleep (NREMS) as well as in slow wave activity, indicative of reduced sleep efficacy and increased REMS. In the present study we were interested in how far a detailed spectral analysis of several electroencephalogram (EEG) parameters, including relevant frequency bands, could reveal further alterations of sleep architecture in this animal model. Eight adult males of each of the three breeding lines were equipped with epidural EEG and intramuscular electromyogram (EMG) electrodes. After recovery, EEG and EMG recordings were performed for two days.     

Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si

The authors review what has been learned concerning the electrical and annealing properties of point defects in high-energy electron or proton irradiated Si from deep level transient spectroscopy (DLTS). The authors have focused mainly on the properties of electron traps, and to a lesser extent on the properties of hole traps. In addition to an in-depth discussion of hydrogen-related defects in Si, this review article provides a brief tutorial on ion-solid interactions and the theory underlying DLTS. The authors also provide a few examples of the power of high resolution Laplace DLTS in analyzing radiation induced defects. The collection of results gathered in this article may provide the fundamental information for successful defect engineering in light-particle irradiated Si.     

Electrical properties and diffusion behavior of hafnium in single crystal silicon

Electrical properties and diffusivity of Hf in single crystal Si have been studied. Several deep level defects were found for Hf in both the upper and lower half of the silicon band gap, and their parameters were measured. Energy levels, concentrations, and capture cross sections were determined for all Hf defects. The DLTS spectra depend on the cooling rate. Analysis of electrical properties yielded a dominant deep level defect at E_C -0.27 eV, which showed field enhanced emission due to Poole–Frenkel effect, confirming its donor nature. This agreed with results obtained using CV and TSCAP. In the lower half of the bandgap, a defect level at E_V +0.24 eV was found to have a capture barrier of 0.04 eV. Diffusivity of Hf was studied using two methods for Hf incorporation in Si – ion implantation and sputtering. Analysis of broadening of the Hf profile in implanted samples, which were annealed for 168 h, allowed us to estimate the diffusivity of Hf as 1.7×10^-15 cm²/s at 1250 °C: the spreading of implanted profiles at lower temperatures was too small. Analysis of Hf depth profiles in the sputtered and annealed samples reveals that Hf appears to have a fast and slow component to its diffusivity whose migration energy was determined to be 3.5±0.3 eV and 4.1±0.3 eV respectively. The fast and slow component are ascribed to interstitial and substitutional Hf with an energy level of E_C -0.27 eV and E_V +0.43 eV respectively. The mechanism for the fast component seems to indicate a direct interstitial diffusion mechanism whereas the diffusion of the substitutional Hf seems most consistent with the concerted exchange diffusion mechanism. In addition, estimates of solubility for both, interstitial and substitutional Hf, are included. PACS 61.72.Tt; 66.30.Jt; 71.55.Cn     

Effects of lipopolysaccharide-induced inflammation on expression of growth-associated genes by corticospinal neurons

Background  

Inflammation around cell bodies of primary sensory neurons and retinal ganglion cells enhances expression of neuronal growth-associated genes and stimulates axonal regeneration. We have asked if inflammation would have similar effects on corticospinal neurons, which normally show little response to spinal cord injury. Lipopolysaccharide (LPS) was applied onto the pial surface of the motor cortex of adult rats with or without concomitant injury of the corticospinal tract at C4. Inflammation around corticospinal tract cell bodies in the motor cortex was assessed by immunohistochemistry for OX42 (a microglia and macrophage marker). Expression of growth-associated genes c-jun, ATF3, SCG10 and GAP-43 was investigated by immunohistochemistry or in situ hybridisation.     

Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies

Interaction of low-energy nitrogen ions with ZnO surface has been studied by photoemission spectroscopy (PES) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. Nitrogen can break Zn-O bonds at the surface and form N-O, Zn-N or Zn-N-O bonds, characterised by specific chemical shifts in PES or absorption peaks in NEXAFS. A distinctive signal from molecular nitrogen has also been observed in ion-bombarded samples in both NEXAFS and PES.