Change of evaporation rate of single monocomponent droplet with temperature using time-resolved phase rainbow refractometry

Droplet evaporation characterization, although of great significance, is still challenging. The recently developed phase rainbow refractometry (PRR) is proposed as an approach to measuring the droplet temperature, size as well as evaporation rate simultaneously, and is applied to a single flowing n-heptane droplet produced by a droplet-on-demand generator. The changes of droplet temperature and evaporation rate after a transient spark heating are reflected in the time-resolved PRR image. Results show that droplet evaporation rate increases with temperature, from ?1.28$\times {10}^{?8}$ m²/s at atmospheric 293 K to a range of (?1.5, ?8)$\times {10}^{?8}$ m²/s when heated to (294, 315) K, agreeing well with the Maxwell and Stefan–Fuchs model predictions. Uncertainty analysis suggests that the main source is the indeterminate gradient inside droplet, resulting in an underestimation of droplet temperature and evaporation rate. With the demonstration on simultaneous measurements of droplet refractive index as well as droplet transient and local evaporation rate in this work, PRR is a promising tool to investigate single droplet evaporation in real engine conditions.     

Asymptotic expansion of the logistic midrange

Using the symbolic computation program MAPLE, we compute several terms of an asymptotic expansion for the distribution function of the logistic midrange.     

Exploring Little Higgs models with ATLAS at the LHC-

The European Physical Journal C - We discuss possible searches for the new particles predicted by Little Higgs Models at the LHC. By using a simulation of the ATLAS detector, we demonstrate how the...     

Knowing and Teaching Middle School Mathematics: A Professional Development Course for In‐Service Teachers

This article describes a professional development course intended to improve the content understanding of middle school mathematics teachers. The design of the course included three professional learning strategies: problem solving, examination of student thinking, and discussion of research. The concepts studied in the course included multi‐digit subtraction, multi‐digit multiplication, operations with fractions, and concepts of area and perimeter. Results from pre‐ and post‐tests administered to the nineteen participants indicate a significant increase in the mean score for each concept and document growth in the teachers' content understanding. In particular, their solutions moved from primarily procedural to more conceptual. Responses to an open‐ended survey indicate other important aspects of the professional development. Examples of teachers' work and comments are included.     

Straightforward conversion of alcohols into dibenzenesulfonimides

The reaction of various alcohols with N-fluorodibenzenesulfonimide and triphenylphosphine leads to the corresponding dibenzenesulfonylated amines in high yields.     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

Growth and characterisation of Eu doped GaN thin films

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.     

Synthesis and stereochemical studies of di and tetra 9,9′-spirobifluorene porphyrins: new building blocks for catalytic material

We report the synthesis and stereochemical properties of a new class of molecules containing a covalently-linked porphyrin and spiro-9,9′-bifluorene derivatives. The large spiro substituents hinder rotation about the meso position to give atropisomers which can be detected by ¹H NMR after phosphine or isocyanide complexation to the ruthenium spiroporphyrins.     

Simultaneous observation of coherent and incoherent resonant re-emission in the condensed phase

We report simultaneous observation of coherent resonance Raman scattering and incoherently broadened resonance fluorescence following excitation of cytochrome c in the α(0, 0) region. The influence of incoherent broadening processes on resonance Raman scattering experiments is considered.