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Set-Valued and Variational Analysis - In a Hilbert framework ℌ, we study the convergence properties of a Newton-like inertial dynamical system governed by a general maximally monotone...  相似文献   
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NOx mitigation is a central focus of combustion technologies with increasingly stringent emission regulations. NOx can also enhance the autoignition of hydrocarbon fuels and can promote soot oxidation. The reaction between allyl radical (C3H5) and NOx plays an important role in the oxidation kinetics of propene. In this work, we measured the absolute rate coefficients for the redox reaction between C3H5 and NOx over the temperature range of 1000–1252 K and pressure range of 1.5–5.0 bar using a shock tube and UV laser absorption technique. We produced C3H5 by shock heating of C3H5I behind reflected shock waves. Using a Ti:Sapphire laser system with frequency quadrupling, we monitored the kinetics of C3H5 at 220 nm. Unlike low-temperature chemistry, the two target reactions, C3H5 + NO → products (R1) and C3H5 + NO2 → products (R2), exhibited a strong positive temperature dependence for this radical-radical type reaction. However, these reactions did not show any pressure dependence over the pressure range of 1.5–5.0 bar, indicating that the measured rate coefficients are close to the high-pressure limit. The measured values of the rate coefficients resulted in the following Arrhenius expressions (in unit of cm3/molecule/s):k1(C3H5+NO)=1.49×10?10exp(?6083.6KT)(1017?1252K)k2(C3H5+NO2)=1.71×10?10exp(?3675.7KT)(1062?1250K)To our knowledge, these are the first high-temperature measurements of allyl + NOx reactions. The reported data will be highly useful in understanding the interaction of NOx with resonantly stabilized radicals as well as the mutual sensitization effect of NOx on hydrocarbon fuels.  相似文献   
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We describe the synthesis and the physical properties of polyaromatic hydrocarbons (PAHs) containing a phosphorus atom at the edge. In particular, the impact of the successive addition of aromatic rings on the electronic properties was investigated by experimental (UV/Vis absorption, fluorescence, cyclic voltammetry) and theoretical studies (DFT). The physical properties recorded in solution and in the solid state showed that the P‐containing PAHs exhibit properties expected for an emitter in white organic light‐emitting diodes (WOLEDs).  相似文献   
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Regioselective demethylation of 3,4-dihydropapaveraldine (2a) at 7 and 3' positions affords a properly substituted diphenolic key intermidiate (2d) for the synthesis of reticuline and N-norreticuline.  相似文献   
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The exponential functional of simple, symmetric random walks with negative drift is an infinite polynomial Y = 1 + ξ1 + ξ1ξ2 + ξ1ξ2ξ3 + ⋯ of independent and identically distributed non-negative random variables. It has moments that are rational functions of the variables μ k = E k ) < 1 with universal coefficients. It turns out that such a coefficient is equal to the number of permutations with descent set defined by the multiindex of the coefficient. A recursion enumerates all numbers of permutations with given descent sets in the form of a Pascal-type triangle. This revised version was published online in August 2006 with corrections to the Cover Date.  相似文献   
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The function lattice, or generalized Boolean algebra, is the set of ℓ-tuples with the ith coordinate an integer between 0 and a bound ni. Two ℓ-tuples t-intersect if they have at least t common nonzero coordinates. We prove a Hilton–Milner type theorem for systems of t-intersecting ℓ-tuples.Received September 29, 2004  相似文献   
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A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.  相似文献   
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