Light-emitting diodes with semiconductor nanocrystals

Colloidal semiconductor nanocrystals are promising luminophores for creating a new generation of electroluminescence devices. Research on semiconductor nanocrystal based light-emitting diodes (LEDs) has made remarkable advances in just one decade: the external quantum efficiency has improved by over two orders of magnitude and highly saturated color emission is now the norm. Although the device efficiencies are still more than an order of magnitude lower than those of the purely organic LEDs there are potential advantages associated with nanocrystal-based devices, such as a spectrally pure emission color, which will certainly merit future research. Further developments of nanocrystal-based LEDs will be improving material stability, understanding and controlling chemical and physical phenomena at the interfaces, and optimizing charge injection and charge transport.     

Pressure-induced transformations in α- and β-Ge3N4: in situ studies by synchrotron X-ray diffraction

Metastable high-pressure transformations in germanium nitride (α- and β-Ge₃N₄ polymorphs) have been studied by energy- and angle-dispersive synchrotron X-ray diffraction at high pressures in a diamond anvil cell. Between P=22 and 25 GPa, the phenacite-structured β-Ge₃N₄ phase (P6₃/m) undergoes a 7% reduction in unit-cell volume. The densification is primarily concerned with the a-axis parameter, in a plane normal to the hexagonal c-axis. Based on results of previous LDA calculations and Raman spectroscopic studies, we propose that the structural collapse is due to transformation into a new metastable polymorph (δ-Ge₃N₄) that has a unit-cell symmetry based upon P3, that is related to the low-pressure β-Ge₃N₄ phase by concerted displacements of N atoms away from special symmetry sites in the plane normal to the c-axis. No such transformation occurs for α-Ge₃N₄, due to the different stacking of linked GeN₄ layers. All three polymorphs (α-, β- and δ-Ge₃N₄) are based on tetrahedrally coordinated Ge atoms, unlike the spinel-structured γ-Ge₃N₄ phase, that contains octahedrally coordinated Ge⁴⁺. Experimentally determined bulk modulus values for α-Ge₃N₄ (K₀=165(10) GPa, K₀′=3.7(4)) and β-Ge₃N₄ (K₀=185(7) GPa, K₀′=4.4(5)) are in excellent agreement with theoretical predictions. The bulk modulus for the new δ-Ge₃N₄ polymorph is only determined above the β-δ transition pressure (P=24 GPa); K=161(20) GPa, assuming K′=4. Above 45 GPa, both α- and δ-Ge₃N₄ polymorphs become amorphous, as determined by X-ray diffraction and Raman scattering.     

Numerical characterization of nanopillar photonic crystal waveguides and directional couplers

We numerically characterize a novel type of a photonic crystal waveguide, which consists of several rows of periodically arranged dielectric cylinders. In such a nanopillar photonic crystal waveguide, light confinement is due to the total internal reflection. A nanopillar waveguide is a multimode waveguide, where the number of modes is equal to the number of rows building the waveguide. The strong coupling between individual waveguides leads to the proposal of an ultrashort directional coupler based on nanopillar waveguides. We present a systematic analysis of the dispersion and transmission efficiency of nanopillar photonic crystal waveguides and directional couplers. Plane wave expansion and finite difference time domain methods were used to characterize numerically nanopillar photonic crystal structures both in two- and three-dimensional spaces.     

Orthorhombic HP‐REOF (RE = Pr,Nd, Sm – Gd) – High‐Pressure Syntheses and Single‐Crystal Structures (RE = Nd,Sm, Eu)

High‐pressure modifications of the rare earth oxide fluorides REOF (RE = Pr, Nd, Sm – Gd) were successfully synthesized under conditions of 11 GPa and 1200 °C applying the multianvil high‐pressure/high‐temperature technique. Single crystals of HP‐REOF (RE = Nd, Sm, Eu) were obtained making it possible to analyze the products by means of single‐crystal X‐ray diffraction. The compounds HP‐REOF (RE = Nd, Sm, Eu) crystallize in the orthorhombic α‐PbCl₂‐type structure (space group Pnma, No. 62, Z = 4) with the parameters a = 632.45(3), b = 381.87(2), c = 699.21(3) pm, V = 0.16887(2) nm³, R₁ = 0.0156, and wR₂ = 0.0382 for HP‐NdOF, a = 624.38(3), b = 376.87(2), c = 689.53(4) pm, V = 0.16225(2) nm³, R₁ = 0.0141, and wR₂ = 0.0323 for HP‐SmOF, and a = 620.02(4), b = 374.24(3), c = 686.82(5) pm, V = 0.15937(2) nm³, R₁ = 0.0177, and wR₂ = 0.0288 for HP‐EuOF. Calculations of the bond valence sums clearly showed that the oxygen atoms occupy the tetrahedrally coordinated position, whereas the fluorine atoms are fivefold coordinated in form of distorted square‐pyramids. The crystal structures and properties of HP‐REOF (RE = Nd, Sm, Eu) are discussed and compared to the isostructural phases and the normal‐pressure modifications of REOF (RE = Nd, Sm, Eu). Furthermore, results of investigations by EDX and Raman measurements including quantum mechanical calculations are presented.     

Soft-graphoepitaxy using nanoimprinted polyhedral oligomeric silsesquioxane substrates for the directed self-assembly of PS-b-PDMS

We report here the fabrication of periodic sub-25 nm diameter size cylinder structures using block copolymer (BCP) directed self-assembly on nanoimprinted topographically patterned substrates. Tailored polyhedral oligomeric silsesquioxanes (POSSs) films were spin coated onto silicon substrates and were patterned by nanoimprint lithography to produce topographies commensurable with the BCP domain spacing. The chemistry of the POSS was tuned to control the alignment and orientation of the BCP films. The substrates were used to direct the microphase separation (following toluene solvent annealing) of a hexagonal structure forming polystyrene-block-polydimethylsiloxane (PS-b-PDMS) having a domain spacing of 42.6 nm and PDMS cylinder widths of 23.7 nm. On more hydrophilic POSS substrates the cylinders were obtained parallel to the substrate plane and aligned with the topography. In contrast, in more hydrophobic POSS patterns, the cylinders align perpendicular to the substrate plane. The use of these methods for the nanofabrication of vias, nanofluidic devices or interconnect structures of sub-25 nm feature size is discussed.     

Chemosorption-related shift of a photonic bandgap in photoconductive ZnO inverse opal

A change of up to 40% of the relative transmission at the photonic bandgap edge has been observed in photoconductive inverted ZnO opals under ultraviolet laser irradiation. This effect has been related to the irradiation-stimulated change of the refraction index of the photonic crystal. The desorption (chemosorption) of oxygen molecules on the surface of the ZnO backbone leading to destruction (formation) of a depletion layer at the ZnO surface has been suggested as the mechanism responsible for the slow variation of polarizability of the inverted ZnO opal.     

Integration of self-assembled three-dimensional photonic crystals onto structured silicon wafers

We report on the fabrication of high-quality opaline photonic crystals from large silica spheres (diameter of 890 nm), self-assembled in hydrophilic trenches of silicon wafers by using a novel technique coined a combination of "lifting and stirring". The achievements reported here comprise a spatial selectivity of opal crystallization without special treatment of the wafer surface, a filling of the trenches up to the top, leading to a spatially uniform film thickness, particularly an absence of cracks within the size of the trenches, and finally a good 3D order of the opal lattice even in trenches with a complex confined geometry, verified using optical measurements. The opal lattice was found to match the pattern precisely in width as well as depth, providing an important step toward applications of opals in integrated optics.