硅中热施主的电子结构

利用20—300K的Hall系数测量和6-300K的红外光吸收,研究了含氧P型CZ硅单晶经450℃不同时间热处理后所产生的热施主问题。Hall系数测量表明:经100hr热处理的样品存在两个施主能级:E₁=58meV,E₂=110meV。对不同热处理时间的样品,从低温红外光吸收则可看见由于热施主所引起的复杂吸收光谱。这些吸收峰的数目随着热处理时间的加长而增加和加强。利用类氢模型和有效质量理论拟会和计算,可以证明与氧有关的热施主很可能是双重电荷施主。这些双重施主有多种组态,它与450℃热处理的时间有关。 关键词：     

Crystal structure of μ-hydroxo-bis[tris(2–aminoethyl)amine]dicopper(II) perchlorate

A novel, high-symmetry dicopper complex bridged by only a single hydroxo has been synthesized and structurally characterized. The coordination geometry of copper(II) is a strict trigonal bipyramidal of C3 symmetry. The three equivalent amino nitrogen atoms of the ligand form the equatorial plane, while the tripodal nitrogen atom and the hydroxo anion occupy axial positions. The bridging Cu-(OH)-Cu angle of the single hydroxo anion is only 136.5°, which does not agree well with data found in similar compounds. The magnetic–structural relation is discussed. This revised version was published online in June 2006 with corrections to the Cover Date.