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沸水阻断多聚磷酸盐分解离子色谱法检测水产品中的多聚磷酸盐 总被引:8,自引:0,他引:8
多聚磷酸盐在水产品中的快速分解影响其准确测定.用沸水破坏使多聚磷酸盐分解的物质,并用三氯甲烷去除水产品中蛋白质等杂质,离子色谱准确测定多聚磷酸盐各组分的量.实验中采用淋洗液自动发生器产生的KOH溶液作为流动相,保护柱和分离柱采用Ionpac AG11-HC和Ionpac AS11-HC抑制电导检测,可以较好地分离所检测焦磷酸根和三偏磷酸根.该方法操作简单,检出限为10 mg/kg,当水产品中添加多聚磷酸盐标准物质浓度达到10~1000 mg/kg范围时,回收率在70%~110%之间,相对标准偏差小于12% . 相似文献
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运用第一性原理方法, 计算了B, P两种元素单掺杂和共掺杂的β -Si3N4材料的电子结构和光学性质. 结果表明: B掺杂体系的稳定性更高, 而P掺杂体系的离子性更强; 单掺和共掺杂均窄化带隙, 且共掺在禁带中引入深能级, 使局域态增强; 单掺杂体系介电函数虚部、吸收谱和能量损失谱各峰均发生红移、幅值减小, 而共掺后介电函数虚部主峰出现蓝移、能量损失峰展宽、高能区电子跃迁大大增强, 且控制共掺杂的B, P比例可获得较低的带电缺陷浓度. 相似文献
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采用密度泛函理论(DFT)平面波赝势方法计算了N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面的电子结构. 由于DFT方法存在对过渡金属氧化物带隙能的计算结果总是与实际值严重偏离的缺陷, 本文也采用DFT+U(Hubbard 系数)方法对模型的电子结构进行了计算. DFT的计算结果表明N掺杂后, N 2p轨道与O 2p和Ti 3d价带轨道的混合会导致TiO2带隙能的降低, 而F掺杂以及氧空位的引入对材料的电子结构没有明显的影响. DFT+U的计算却给出截然不同的结果, N掺杂并没有导致带隙能的降低, 而只是在带隙中引入一个孤立的杂质能级, 反而F掺杂以及氧空位的引入带来明显的带隙能降低. DFT+U的计算结果与一些实验测量结果能够较好地符合. 相似文献
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基于边界层转捩后阶段的高精度直接数值模拟结果,发现流向条纹结构的低速条纹的演化过程中存在不连续现象,以及随高速条纹的发展会出现称之为"高速斑"的新特性. 通过详细剖析边界层转捩过程中的复杂涡系结构以及上喷下扫流动现象,证实流向高低速条纹新特性与流场涡系结构的演化过程紧密相关.
关键词:
流向条纹
边界层
转捩
直接数值模拟 相似文献
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Po-Tsung Hsieh Ricky Wen-Kuei Chuang Chao-Qun Chang Chih-Ming Wang Shoou-Jinn Chang 《Journal of Sol-Gel Science and Technology》2011,58(1):42-47
Yttrium-doped ZnO gel was spin-coated on the SiO2/Si substrate. The as-prepared ZnO:Y (YZO) thin films then underwent a rapid thermal annealing (RTA) process conducted at
various temperatures. The structural and photoluminescence characteristics of the YZO films were discussed thereafter. Our
results indicated that the grain size of YZO thin films being treated with various annealing temperatures became smaller as
compared to the ones without being doped with yttrium. Furthermore, unlike other ZnO films, the grains of YZO thin films appeared
to separate from one another rather than aggregating together as both types of the films were annealed under the same environment.
The photoluminescence characteristic measured showed that the UV emission was the only radiation obtained. However, the UV
emission intensity of YZO thin film was much stronger than that of the ZnO thin film after annealing them with the same condition.
It was also found that the intensity increased with an increase in the annealing temperature, which was caused by the exciton
generated and the texture surface of the YZO thin film. 相似文献