Strong water repellency effect on SiO<Subscript>2</Subscript> films processed at a nanometric scale

The present study deals with the creation of nano-rough surfaces with stable and controlled high hydrophobicity. These surfaces were obtained by combining the ion track etching technique with a simple functionalization by grafting perfluoroctyltrichlorosilane (PFOTS) molecules. Surface morphology was investigated by AFM observations which evidenced a self-affine fractal structure with a fractal dimension D_f ~ 2.6. The study of the wetting properties of these surfaces allowed to elucidate the conditions for observing a high hydrophobicity phenomenon and to predict the contact angle values for surfaces designed at a nanometric scale.     

Interest of Rapid Thermal Annealing (RTA) for the Elaboration of SnO2:Sb Transparent Conducting Oxide by the Sol-Gel Technique

Transparent Conducting Oxide (TCO) films of Sb doped SnO₂ have been successfully elaborated by us using the Sol-Gel Dip Coating (SGDC) technique. Good conductive and optical properties of such films depend on the densification and crystallisation of the SGDC deposits, which can be achieved by classical thermal procedures but such procedures are time consuming in case of multilayered films. Here are presented results of Rapid Thermal Annealing (RTA) of these films, which lead to good conductive properties even in the case of monolayered films.     

Structure and dielectric properties of HfO<Subscript>2</Subscript> films prepared by a sol–gel route

Mono- and multilayer HfO₂ sol–gel thin films have been deposited on silicon wafers by dip-coating technique using a solution based on hafnium ethoxide as precursor. The densification/crystallization process was achieved by classical annealing between 400 and 600 °C for 0.5 h (after drying at 100 °C). Systematic TEM studies were performed to observe the evolution of the thin film structure depending on the annealing temperature. The overall density of the films was determined from RBS spectrometry correlated with cross section (XTEM) thickness measurements. After annealing at 450 °C the films are amorphous with a nanoporous structure showing also some incipient crystallization. After annealing at 550 °C the films are totally crystallized. The HfO₂ grains grow in colonies having the same crystalline orientation with respect to the film plane, including faceted nanopores. During annealing a nanometric SiO₂ layer is formed at the interface with the silicon substrate; the thickness of this layer increases with the annealing temperature. Capacitive measurements allowed determining the value of the dielectric constant as 25 for four layer films, i.e. very close to the value for the bulk material.     

Microstructural and magnetic properties of thick (≥10 μm) magnetron sputtered barium ferrite films

This work focuses on the properties of 10-15 μm thick barium M-type hexaferrite (BaFe₁₂O₁₉ or BaM) films deposited by non-reactive RF magnetron sputtering on alumina substrates. High deposition rates were achieved through deposition at room temperature and operation at an RF power of 100 W. By varying sputtering gas pressure, the dc magnetic properties were correlated with structural, morphological and compositional properties obtained by X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS), respectively. A deposition pressure of P=3 Pa enables one to reach the best compromise between high deposition rate (0.75 μm/h) and adequate crystallographic, stoichiometric and magnetostatic properties. Finally the gyromagnetic properties at high frequency were assessed through the characterization of coplanar isolator up to 60 GHz. As such, hexaferrite films prepared using this technique may offer opportunities for the next generation of self-biased planar microwave devices.     

Structure of Ni/SiO2 films prepared by sol-gel dip coating

The sol-gel dip coating technique has been used to deposit composite oxide films (NiO)_x(SiO₂)_1−x with x = 0.1 on silicon wafers. Single and multilayer coatings allowed a variation of the film thickness from 70 to 400 nm. Film morphology, atomic structure and atomic composition have been investigated by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). The local environment of the Ni atoms was characterized by extended X-ray absorption fine structure (EXAFS). The samples were studied in the as-prepared state and after annealing in H₂ at 600 °C for 1 h. The structural and chemical state evolution of clusters present inside the silica matrix is discussed in terms of out-of-equilibrium reaction processes specific to low-dimensional objects and superficial effects.     

Excimer Laser Crystallization of SnO2:Sb Sol-Gel Films

Instead of classical or rapid thermal annealing, KrF excimer laser irradiation has been successfully applied to crystallize dried SnO₂:Sb films elaborated by a sol-gel process. The penetration of the crystallization front below the film surface, as imaged by transmission electron microscopy, is controlled by the laser fluence and the number of pulses and can thus be confined in the film itself without affecting sensitive substrates. All films laser irradiated at fluences higher than 40 mJ/cm² become conductive. At constant laser fluence, the electrical sheet resistance goes through a minimum with increasing number of pulses. The consequence of film's densification and morphology on electrical properties is discussed.