Synthesis and Reactions of Some New Pyrrolylfuro[2,3‐d]Pyrimidines and Pyrrolopyrazinofuropyrimidines

5‐Amino‐4‐methyl‐2‐phenyl‐6‐substitutedfuro[2,3‐d]pyrimidines ( 2a‐c ) were reacted with 2,5‐dimethoxytetrahydrfuran to afford the pyrrolyl derivatives 3a‐c . Compound 3a was chosen as intermediate for the synthesis of poly fused heterocycles incorporated furopyrimidines moiety 4–11 . Some of the synthesized compounds were screened for their antibacterial and antifungal activities.     

On the Discrete Hardy Inequality

Necessary and sufficient conditions for the boundedness of thediscrete Hardy operator of the form , from to when 0 < q < 1 <p , is given.     

Experimental and Quantum Chemical Studies of 5-Fluoroisatin-3-(N-Cyclohexylthiosemicarbazone) and Its Metal Complexes

Abstract

Zn(II) and Ni(II) complexes of 5-fluoroisatin-3-[-(N-cyclohexylthiosemicarbazone)] (H₂FIC) have been prepared and characterized structurally by means of elemental analyses, FTIR, electronic, and ¹H NMR spectra. The theoretical wavenumbers, IR intensities, and molecular parameters have been calculated by the ab-initio Hartree–Fock (HF) method with the LanL2DZ basis set. The theoretical wavenumbers show a good agreement with experimental data. The bond lengths, bond angles, the highest occupied molecular orbital energy (E_HOMO), the lowest unoccupied molecular orbital energy (E_LUMO), the energy gap between E_HOMO and E_LUMO (ΔE_HOMO-LUMO), dipole moment, and charges on the atoms of H₂FIC as monomer form were studied by the density functional theory/Becke-3-Lee-Yang-Parr (DFT/B3LYP) and ab-initio HF methods using 6-31G(d,p) basis set. The trimeric possible structure of H₂FIC was also investigated using HF method. The observed IR wavenumbers of the H₂FIC were analyzed in the light of the computed vibrational spectra of its monomer and trimer forms.

Supplemental materials are available for this article. Go to the publisher's online edition of Phosphorus, Sulfur, and Silicon and the Related Elements to view the free supplemental file.     

The Crystal and Molecular Structure of an Antidepressant Drug (Isocarboxazid)

The crystal arid molecular structure of 5-methyl-3-isoxazole carboxylic acid 2-benzylhydrazine (isocarboxazid, C₁₂H₁₃N₃O₂), an antidepressant drug, has been determined by X-ray diffraction method and IR analysis. The compound crystallizes in the monoclinic space group P2₁/c, with a = 6.376(1), b = 14.131(1), c = 13.256(1) Å, β = 99.75(1)°. The structure has been solved by using SIR program and refined to R = 0.048. The benzene and isoxazoles rings are not coplanar and have a dihedral angle of 167.7(5)° between their respective planes. Some of the bond lengths and angles found in the molecule are distorted due to π-electron delocalization and strain. The infrared spectrum of isocarboxazid has been also reported and assignments have been suggested for some characteristic bands. These assignments were confirmed by X-ray analysis.     

Structural,optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

We have studied the structural properties of undoped and Si-doped Al_xGa_1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the Al_xGa_1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A₁(LO) and E₂(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (Φ_B) of undoped and Si-doped Al_xGa_1?xN samples was found to be 0.86 and 0.74 eV, respectively.     

Fourier Transform Infrared and Raman Spectra of 4-Vinylpyridine and its Transition Metal(II) Tetracyanonickelate Complexes

Abstract

Infrared and Raman spectra (4000-200 cm^?1) were recorded for 4-vinylpyridine and vibrational assignments made for fundamental modes on the basis of frequency shifts of the coordinated ligand, of the group vibrational concept and comparison with the assignments for related molecules. the infrared spectra of M(4-vinylpyridine)₂Ni(CN)₄ (M=Mn, Cd, Fe, Co, Ni or Cu) are reported.     

Studies on photoinduced effects in pulse-electrodeposited Ag/Hg-1212/CdSe hetero-nanostructures

Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined. The increase in carrier concentration across the junction due to photo-irradiation has been observed.     

Effect of laser irradiation of C-V characteristics of electrodeposited Ag/Tl-2223/CdSe hetero-nanostructures

One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation, metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction built-in-potential (V _D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied.