Modification of the photoluminescence anisotropy of semiconductor nanowires by coupling to surface plasmon polaritons

We demonstrate efficient modification of the polarized light emission from single semiconductor nanowires by coupling this emission to surface plasmon polaritons on a metal grating. The polarization anisotropy of the emitted photoluminescence from single nanowires is compared for wires deposited on silica, a flat gold film, and a shallow gold grating. By varying the orientation of the nanowire with respect to the grating grooves, the large intrinsic polarization anisotropy can be either suppressed or enhanced. This modification is interpreted by the appearance of an additional emission channel induced by surface plasmon polaritons and their conversion to p-polarized radiation at the grating.     

Anomalous thermopower in the metalliclike phase of a 2D hole system

We report very low temperature ( T) thermopower and resistivity ( rho) measurements on variable-density, two-dimensional hole systems confined to GaAs quantum wells. As the hole density is lowered from 1.49x10(11) cm(-2) to 0.14x10(11) cm(-2), the system crosses from an insulating ( drho / dT less, similar0) to a metallic regime ( drho / dT>0) and finally displays insulating behavior ( drho / dT<0). Diffusion thermopower shows a striking sign reversal in a narrow range of density in the metallic regime, suggesting a qualitative change in the conduction or the scattering mechanism.     

A monopole mass filter with a hyperbolic V-shaped electrode

In this article we compare the classical monopole mass filter of von Zahn and the monopole mass filter with a hyperbolic V-shaped electrode. The experimental results and those of computer simulation for both mass spectrometers are presented. We show that the replacement of a conventional 90 degrees V-shaped electrode by an electrode with a hyperbolic profile substantially improves the peak shape of any given mass, and increases the mass resolution by a factor of 3-4 and the abundance sensitivity by a factor of 100. The potential of high analytical performance combined with electroforming techniques for electrode manufacture indicate future practical uses of such instruments. Copyright 1999 John Wiley & Sons, Ltd.     

Growth kinetics of heterostructured GaP-GaAs nanowires

We have studied the vapor-liquid-solid (VLS) growth dynamics of GaP and GaAs in heterostructured GaP-GaAs nanowires. The wires containing multiple GaP-GaAs junctions were grown by the use of metal-organic vapor phase-epitaxy (MOVPE) on SiO(2), and the lengths of the individual sections were obtained from transmission electron microscopy. The growth kinetics has been studied as a function of temperature and the partial pressures of the precursors. We found that the growth of the GaAs sections is limited by the arsine (AsH(3)) as well as the trimethylgallium (Ga(CH(3))(3)) partial pressures, whereas the growth of GaP is a temperature-activated, phosphine(PH(3))-limited process with an activation energy of 115 +/- 6 kJ/mol. The PH(3) kinetics obeys the Hinshelwood-Langmuir mechanism, indicating that the dissociation reaction of adsorbed PH(3) into PH(2) and H on the catalytic gold surface is the rate-limiting step for the growth of GaP. In addition, we have studied the competitive thin layer growth on the sidewalls of the nanowires. Although the rate of this process is 2 orders of magnitude lower than the growth rate of the VLS mechanism, it competes with VLS growth and results in tapered nanowires at elevated temperatures.     

Shape resonances in slow electron scattering by aromatic molecules. I. Anthraquinone derivatives

A series of anthraquinone (C(14)O(2)H(8)) derivatives has been studied by means of electron capture negative ion mass spectrometry (ECNI-MS), photoelectron spectroscopy (PES), and AM1 quantum chemical calculations. Mean lifetimes of molecular negative ions M(-.) (MNI) have been measured. The mechanism of long-lived MNI formation in the epithermal energy region of incident electrons has been investigated. A simple model of a molecule (a spherical potential well with the repulsive centrifugal term) has been applied for the analysis of the energy dependence of cross sections at the first stage of the electron capture process. It has been shown that a temporary resonance of MNI at the energy approximately 0.5 eV corresponds to a shape resonance with lifetime 1-2.10(-13) s in the f-partial wave (l = 3) of the incident electron. The next resonant state of MNI at the energy approximately 1.7 eV has been associated with the electron excited Feshbach resonance (whose parent state is a triplet npi* transition). In all cases the initial electron state of the MNI relaxes into the ground state by means of a radiationless transition, and the final state of the MNI is a nuclear excited resonance with a lifetime measurable on the mass spectrometry timescale. Copyright 1999 John Wiley & Sons, Ltd.     

Domain decomposition algorithms for indefinite weakly singular integral equations: the h and p versions

We extend the approach of Cai and Widlund (Domain decompositionalgorithms for indefinite elliptic problems, SIAM J. Sci. Stat.Comput. 13 (1992), 243-258), which was designed for finite elementdiscretizations, to boundary element discretizations of indefiniteweakly singular integral equations. Both the h and p versionsof the Galerkin approximation are considered. We prove thatthe additive Schwarz method suggested by Cai and Widlund canbe used for this equation as an efficient preconditioner forGMRES, an iterative method of conjugate gradient type. For bothversions, the rates of convergence of this iterative methodare shown to approach 1 only logarithmically as the degreesof freedom tend to infinity.     

Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires

A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbit effective field in an InSb nanowire double dot. The obtained results are confirmed using spin blockade leakage current anisotropy and transport spectroscopy of individual quantum dots.     

Increase of the photoluminescence intensity of InP nanowires by photoassisted surface passivation

As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency. Time traces of the luminescence of surface-passivated wires show strong oscillations resembling the on-off blinking observed with single quantum dots. These results reflect the strong influence of a single or a few nonradiative recombination center(s) on the luminescence properties of an entire wire.