Preparation and Characterization of Cyclohexyl Moiety Toughened POSS-Reinforced Epoxy Nanocomposites

Polyhedral oligomeric silsesquioxane (POSS)-reinforced epoxy nanocomposites were prepared by reacting commercially available diglycidyl ether of bisphenol-A (DGEBA) and tetraglycidyl diamino diphenyl methane (TGDDM) epoxy resins with 1,1-bis(3-methyl-4-glycidyloxyphenyl)cyclohexane (Cy-Ep) separately and reinforced with POSS nanocluster. POSS (OAPS)-reinforced hybrid Cy-Ep-epoxy resin castings were characterized for their mechanical and morphological properties. The data obtained from mechanical studies indicated that the incorporation of nano OAPS into Cy-Ep modified hybrid systems results in improved stability. Among the epoxy systems studied, the TGDDM-based hybrid epoxy system exhibited higher values of tensile and flexural properties than that of the DGEBA hybrid epoxy system, whereas the impact strength of the DGEBA system was higher than that of the TGDDM system. The dispersion of POSS was confirmed by scanning electron microscopy and visual observation studies.     

Synthesis and improved electrochemical performance of LiCo1‐xSnxO2 (x= 0 to 0.1) powders

Layered intercalation compounds LiCo_1‐xSn_xO₂ (x= 0 to 0.1) have been prepared using a simple combustion route method. X‐ray diffraction patterns and Laser Raman spectrum suggest that the synthesized materials had the R‐3m structure. Scanning electron images show that particles are well‐crystallized with a size distribution in the range of 50‐100 nm. The room temperature electrical conductivity of the sample increased with Sn content. For LiCo_1‐xSn_xO₂(x = 0, 0.01, 0.03, 0.05 and 0.1), the first discharge capacity increased with increase in Sn content. Among these samples, LiCo_0.95Sn_0.05O₂had produced the best performance of all others with a stable reversible capacity of 186 mAhg^‐1 after 30 cycles. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Inelasticity effects inππ production inγγ collisions

The inelasticity effects in the production of pion pairs in the processγγ→ππ for real photons are investigated using the partial wave dispersion relations. The total cross sections for different photon helicities are calculated. It is observed that this process is dominated by theππ final state interaction. A prediction for S* (997) →γγ decay width is also made. Work supported financially by CSIR, New Delhi     

Minimization of wafer bowing in GaN-based vertical light-emitting diodes by selective area growth using metal-organic chemical vapor deposition

The effect of selective area growth (SAG) on wafer bowing of GaN-based light-emitting diodes (LEDs) is investigated. The SAG of LED structures was carried out on a silicon dioxide (SiO₂) mask pattern with periodic 1000×1000 μm openings, along the sapphire 〈1?1 0 0〉 and 〈?1?1 2 0〉 directions. The morphology of a selectively-grown n-GaN epilayer was examined in relation to various growth parameters such as temperature, pressure, and V/III ratio. Under optimized growth conditions, formation of a ridge-shaped epilayer with a v-pit free smooth surface was realized. Furthermore, the ridge-shaped vertical LED structure, after the removal of the sapphire substrate by laser lift-off (LLO) showed less wafer bowing compared with conventional vertical LED structures. This is attributed to the suppression of lateral strain and dislocations during the site-selective growth process, due to a reduction in the lateral dimensions.     

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

We report on effects of Fe implantation doping-induced changes in structural, optical, morphological, and vibrational properties of cadmium sulfide thin films. Films were implanted with 90 keV Fe⁺ ions at room temperature for a wide range of fluences from 0.1×10¹⁶ to 3.6×10¹⁶ ions cm⁻² (corresponding to 0.38–12.03 at.% of Fe). Glancing angle X-ray diffraction analysis revealed that the implanted Fe atoms tend to supersaturate by occupying the substitutional cationic sites rather than forming metallic clusters or secondary phase precipitates. In addition, Fe doping does not lead to any structural phase transformation although it induces structural disorder and lattice contraction. Optical absorption studies show a reduction in the optical band gap from 2.39 to 2.17 eV with increasing Fe concentration. This is attributed to disorder-induced band tailing in semiconductors and ion-beam-induced grain growth. The strain associated with a lattice contraction is deduced from micro-Raman scattering measurements and is found that size and shape fluctuations of grains, at higher fluences, give rise to inhomogeneity in strain.     

Synthesis,crystal growth and properties of the charge transfer complex adduct of 2‐nitro aniline with picric acid – An organic non‐linear optical material

The organic NLO material 2‐nitro aniline and picric acid (2NAP) was synthesized, needle shaped single crystals of dimension 10 × 1 × 0.8 mm^‐3 were grown by slow evaporation solution growth technique from the saturated solution of the title compound in chloroform at ambient temperature. The material was characterized through elemental analysis, powder XRD, ¹H NMR, ¹³C NMR and FTIR techniques. The various planes of reflection have been identified from the XRD powder pattern. The formation of the charge transfer complex was confirmed by UV‐VIS spectroscopy. The thermal stability of the crystals was investigated using TG/DTA analyses techniques. The second harmonic generation (SHG) efficiency of the material was estimated using Nd: YAG laser as source. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Numerical analysis on flow and performance characteristics of a small-scale solar updraft tower (SUT) with horizontal absorber plate and collector glass

Journal of Thermal Analysis and Calorimetry - A numerical analysis has been performed to examine and assess the flow and performance characteristics of the solar updraft tower (SUT) power plant. A...     

The Crystal and Molecular Structure of (μ‐terephthlato) bis [(N‐Salicylidene ‐N'‐(2‐hydroxyethyl) ethylenediamine) Copper(II)]

The title compound [[Cu(shen)]₂(tp)], {[Cu(C₁₅H₁₇O₄N₂)]2}, where tp = dianion of terephthalic acid and shen = (N‐salicylidene‐N'‐(2‐hydroxyethyl ethylene‐diamine)) has been prepared and its crystal structure determined by single crystal X‐ray diffraction at room temperature. The complex crystallizes in the orthorhombic space group Pbca with four formula units in a unit cell of dimensions a = 12.298(2), b = 14.214(2) and c = 16.436(2)Å. The structure consists of binuclear units with Cu(II) ion bridged by the tp ligand in a bis‐unidentate fashion. The five coordinate Cu(II) complex adopts a distorted square‐based pyramid. A crystallographic inversion center has been located at the center of the benzene ring of the tp bridging ligand. The Cu … Cu distance inside a same binuclear entity is 11.069Å. Intermolecular aromatic ring stacking interactions were observed with the shortest atom to atom contact being 3.423Å.     

Modifications in structural and optical properties of Mn-ion implanted CdS thin films

In this paper, we report on modifications in structural and optical properties of CdS thin films due to 190 keV Mn-ion implantation at 573 K. Mn-ion implantation induces disorder in the lattice, but does not lead to the formation of any secondary phase, either in the form of metallic clusters or impurity complexes. The optical band gap was found to decrease with increasing ion fluence. This is explained on the basis of band tailing due to the creation of localized energy states generated by structural disorder. Enhancement in the Raman scattering intensity has been attributed to the enhancement in the surface roughness due to increasing ion fluence. Mn-doped samples exhibit a new band in their photoluminescence spectra at 2.22 eV, which originates from the d-d (⁴T₁ → ⁶A₁) transition of tetrahedrally coordinated Mn²⁺ ions.