Molecular Layer Deposition and Thermal Transformations of Titanium(Aluminum)-Vanadium Hybrid Organic-Inorganic Films

In this work Molecular layer deposition (MLD) technique used to synthesize titanium-vanadium (TiV _x C _y O _z ) and aluminum-vanadium (AlV _x C _y O _z ) hybrid organic-inorganic films via alternating surface reactions of titanium tetrachloride (or trimethylaluminum), vanadium oxochloride, and ethylene glycol. Using in situ monitoring it was found that the surface reactions were self-limiting at temperatures of 90 and 115°C. The coating thickness per molecular layer deposition cycle (growth rate) at 115°C on a silicon substrate varied from 5.8 to 11.4 Å/cycle, and the film densities, from 1.7 to 2.0 g cm^–3. An analysis of the samples obtained at 115°C revealed their amorphous structure. A thermal treatment of titanium-vanadium films at 450°C in air resulted in formation of highly structured coatings. These coatings were composed of nanowires of single-crystal vanadium oxide (V₂O₅) and mixed nanostructures of titanium and vanadium oxides. Increase in thermal treatment temperature to 500°C resulted in elongation of the V₂O₅ nanowires up to tens of micrometers and in their separation from the substrate. A thermal treatment of aluminum-vanadium films in air resulted in formation of a low-density film. Pyrolysis of the films in an inert gas yielded composite coatings containing domains of graphitized carbon. These films can be potentially useful in modern devices for energy storage, electronics, medicine and other promising fields of technology.     

Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum,Ammonia, and Water

Russian Journal of General Chemistry - Thin films of aluminum nitride and oxynitride were deposited by atomic layer deposition (ALD) in the temperature range from 170 to 290°C (optimal...