Simulation of electron solid interactions in NbC and NbN using Monte Carlo method

A computer program has been developed using Rutherford’s Screened Scattering Model and Energy loss model due to Bethe and applied to simulate the electron interaction pattern in the sample of NbC and NbN with a resist layer of PMMA (Polymethyl Methylacrylate). Using the program we have studied the extent of penetration, lateral spread for different electron energies and the degree of electron back scattering. It has been found that backscattering and lateral spread is more in case of NbC than in NbN signifying hard, refractory and ceramic properties of NbC.     

Studies on energy band structure of NbC and NbN using DFT

Energy band structure of NbC and NbN are calculated using generalized gradient approximation (GGA) within density functional theory (DFT) including five high symmetry points W, L, Γ, X and K. The lowest band corresponds to 2s band of non metal (C and N) atoms and the next lowest band is formed by 2p nonmetal. The decomposing points of t _2g states (Γ ₂₅), e _g states (Γ ₁₂) and C or N 2p states (Γ ₁₅) show interesting behavior different from earlier reports.     

D-A-D-based Unsymmetrical Thiosquaraine Dye for the Dye-Sensitized Solar Cells†

In dye-sensitized solar cell, modulating the electronic properties of the sensitizer by varying the donor, π-spacer, acceptor and anchoring groups help optimizing the structure of the dye for better device performance. Here, a donor–acceptor–donor-based unsymmetrical thiosquaraine sensitizer ( SQ5S ) has been designed and synthesized. Photophysical, electrochemical, theoretical and photovoltaic characterizations of SQ5S dye have been compared with its oxygen analog, SQ5 . The incorporation of the sulfur atom in the acceptor unit of SQ5S dye showed an intense peak at 688 nm, which was 38 nm of red-shifted and showed the panchromatic light harvesting response with the onset of 850 nm compared with SQ5 dye. The LUMO and HOMO energy levels are well aligned with the conduction band of TiO₂ and the redox potential of electrolyte for the charge injection and the dye-regeneration processes, respectively. Photovoltaic efficiency of 1.51% (V_OC 610 mV, J_SC 3.07 mA cm⁻², ff 81%) has been achieved for SQ5S dye, whereas SQ5 showed the device performance of 5.43% (V_OC 723 mV, J_SC 9.3 mA cm⁻², ff 80%). The decreased device performance for the dye SQ5S has been attributed to the favorable intersystem crossing process associated with the photoexcited SQ5S that reduces the driving force for the charge injection process.