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A. Parisini D. Nobili A. Armigliato M. Derdour L. Moro S. Solmi 《Applied Physics A: Materials Science & Processing》1992,54(3):221-224
The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×1017 As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×1021 cm–3 at 1050° C. 相似文献
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Berti M De Salvador D Drigo AV Petrovich M Stangl J Schaffler F Zerlauth S Bauer G Armigliato A 《Micron (Oxford, England : 1993)》2000,31(3):285-289
In this work we present some recent results concerning the alpha-particles irradiation of Si1-yCy alloy epitaxially grown on silicon. The study of the damage process is interesting because of the extensive use of backscattering technique as a tool of characterisation of this kind of materials and because of the possibility of adding information about the transformations that this metastable material undergoes. We point out that the irradiation damage process causes a change in the material structure different from that due to the thermal treatments. The irradiation damage occurs at a rate much higher than in Si, however it involves only a silicon atom fraction that appears to be proportional to the substitutional carbon content. 相似文献
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Armigliato Aldo Govoni Donato Balboni Roberto Frabboni Stefano Berti Marina Romanato Filippo Drigo Antonio V. 《Mikrochimica acta》1994,114(1):175-185
Si1–x
Ge
x
heterostructures have been grown by molecular beam epitaxy, with nominal compositions of 10 and 15 at %. Analytical electron microscopy, Rutherford backscattering spectrometry and ion channeling have been used in order to determine film thickness, Ge molar fraction and tetragonal distortion. The actual Ge concentrations were found to be smaller than the nominal ones. For all the SiGe films a coherent growth was found, with a small deviation from the perfect tetragonal distortion. The good agreement found between the results obtained by each analytical technique demonstrate that these methods of characterization are powerful tools for the control of the epitaxial layer parameters. 相似文献