New labdane-type diterpenoids from Leonurus heterophyllus SW

Five new natural labdane-type diterpenoids (5-9), designated leoheteronins A-E, together with four known diterpenoids (1-4), two phytosterols as a mixture of beta-sitosterol and stigmasterol, and the flavone genkwanin (10) were isolated from the aerial parts of Leonurus heterophyllus SW. (Lamiaceae) collected in northern Vietnam. Compound 1 was isolated for the first time from a Leonurus species, and 10 is considered to be a chemotaxonomic marker of the Leonurus genus. Their structures were determined using spectroscopic analyses.     

Staphylionosides A-K: megastigmane glucosides from the leaves of Staphylea bumalda DC

Chemical investigation of leaves of Staphylea bumalda DC., collected in the suburbs of Hiroshima City, afforded 11 new megastigmane glucosides, named staphylionosides A-K (3-13), along with two known megastigmane glucosides (1, 2). The relative structures were elucidated from spectroscopic evidence, and the absolute structures of the aglycones were determined by means of the combination of beta-D-glucosylation-induced shift-trends and the modified Mosher's method.     

Growth and morphology of 6H-SiC epitaxial layers by CVD

Single crystals of 6H-SiC were epitaxially grown on 6H-SiC substrates in the temperature range of 1500 to 1750°C with gas composition: H₂ ≈ 1 l/min, SiCl₄ ≈ 1 ml/min, C₃H₈ ≈ 0.05 ml/min. The grown layers were transparent and mirror-like. The morphology of the grown layer was strongly influenced by the polarity of the substrate surface. Aggregates of trapezoidal crystals were observed on the (000$\text{1}$)C surface and a mosaic pattern was observed on the (0001)Si surface. By observing the initial stage of the crystal growth, the growth mechanism of 6H-SiC is discussed. On (000$\text{1}$)C surfaces the vertical growth dominates, while on (0001)Si surfaces the lateral growth dominates.     

Role of Ti 3d carriers in mediating the ferromagnetism of Co∶TiO2 anatase thin films

We study the surface and bulk electronic structure of the room-temperature ferromagnet Co∶TiO(2) anatase films using soft- and hard-x-ray photoemission spectroscopy with probe sensitivities of ～1 and ～10 nm, respectively. We obtain direct evidence of metallic Ti(3+) states in the bulk, which get suppressed to give a surface semiconductor, thus indicating the difference in electronic structure between surface and bulk. X-ray absorption and resonant photoemission spectroscopy reveal Ti(3+) electrons at the Fermi level (E(F)) and high-spin Co(2+) electrons occurring away from E(F). The results show the importance of the charge neutrality condition: Co(2+)+V(O)(2-)+2Ti(4+)?Co(2+)+2Ti(3+) (V(O) is oxygen vacancy), which gives rise to the elusive Ti 3d carriers mediating ferromagnetism via the Co 3d-O 2p-Ti 3d exchange interaction pathway of the occupied orbitals.     

Tareciliosides H-M: further cycloartane glycosides from leaves of Tarenna gracilipes

From the 1-BuOH-soluble fraction of a MeOH extract of leaves of Tarenna gracilipes, collected in Okinawa, six further new cycloartane glycosides, named tareciliosides H-M (1-6), were isolated. Their structures were established through a combination of spectroscopic analyses.     

Electron spin resonance of the two-dimensional metallic state and the quantum Hall state in a Si/SiGe quantum well

We report electrically detected electron spin resonance (ESR) measurements of a high mobility two-dimensional (2D) electron system formed in a Si/SiGe quantum well, with millimeter wave in a high magnetic field . The negative ESR signal observed under an in-plane magnetic field gives direct evidence that the spin polarization leads to a resistance increase in the 2D metallic state. Suppression of spin decoherence was observed in the quantum Hall state at the Landau level filling factor ν=2. Strength of the nuclear magnetic field in the resonance is evaluated to be less than , much smaller than that reported for GaAs/AlGaAs heterostructures.     

Empirical determination of the random fraction in disordered channel

A new method of deriving the random fraction in a disordered channel : rom dechanneling experiments is described. In this method backscattering spectra obtained at two different doses are employed, with an assumption on the dose dependence of the defect concentration. The method is applied to the experimental data for B-implanted Si and it is found that the obtained random fraction is similar to the result of the diffusion calculation made by the present authors. The depth profiles of defects are also obtained and compared with the result of theoretical calculations.     

Rate-determining process in chemical vapor deposition of SiC on off-axis -SiC

Homoepitaxial growth on off-axis α-SiC at reduced pressures in a horizontal cold-wall chemical vapor deposition (CVD) system operating at has been investigated. The growth rate was found inversely proportional to the square root of total pressure or the partial pressure of H₂, a carrier gas. A model to explain the experimental results is proposed, where the rate-determining process in CVD is competition between Si species and hydrogen atoms for C (carbon) dangling bonds at SiC step edges.