Surface-interface investigations of an ultrathin pulsed laser deposited NiO/ZnO bilayer structure

We hereby report detailed structural and morphological studies for an ultrathin NiO/ZnO bilayer structure grown on sapphire (001) substrate using pulsed laser deposition technique. The combined X-ray reflectivity (XRR) and grazing incidence X-ray fluorescence (GIXRF) studies revealed formation of a low-density defective ZnO interfacial layer of thickness ~32 Å at the ZnO/sapphire interface prior to growth of main ZnO layer. Our results further indicate that the variation of electron density across the NiO/ZnO bilayer structure is smooth and we do not observe presence of any interface layer between them. X-ray diffraction measurements show that deposited ZnO layer is epitaxial in nature whereas NiO is highly oriented along (100) direction. The angle dependent X-ray absorption near edge fine structure (XANES) measurements at Ni–K edge has been utilized to determine depth-resolved oxidation state of Ni and the results have been correlated with the depth-resolved electron density of NiO layer. The method described here offers nondestructive determination of the microstructural parameters as well as depth-resolved mapping of oxidation state of a thin film-based heterojunction device. It extends several advantages over destructive methods which are abundantly reported in literature.     

Ion beam sputter deposited W/Si multilayers: Influence of re-sputtering on the interface structure and structure modification at ultra short periods

X-ray multilayer mirrors of period ranging from 9.6 to 1.7 nm, deposited using ion beam sputtering, have been examined using grazing incidence X-ray reflectivity (GIXRR) and grazing incidence X-ray diffraction. Detailed analysis of GIXRR data revealed that significant amount of re-sputtering of Si layer takes place while W deposition is underway. Re-sputtering is mainly due to bombardment of high-energy neutrals getting reflected from the W target. Due to re-sputtering interface of the multilayer becomes asymmetric. This puts a major hindrance in avoiding the intermixing and achieving sharp interfaces at shorter periods. Maximum thickness of Si which gets lost due to re-sputtering during deposition is ∼0.8 nm. The shortest period multilayer estimated, that could be deposited without intermixing, was 2.7 nm. These results are of significance for developing low period W/Si multilayers.     

Modulation of Electronic Mobility of a One‐Dimensional Coordination Polymeric Molecular Wire with Light

Metal ions often influence the photoswitching efficiency of a photochromic system. This article reports a one‐dimensional polymer having cyclic azobenzenes coordinated to silver ions that are bridged by nitrates. The coordination polymer (CP‐ 2 ) displays a photoresponsive behavior. The switching ability in the polymer form was faster compared to the parent azobenzene ligand without the metal ions. Azobenzenes are reported to be poorly conducting. Here, although the azobenzene ligand does not show significant electronic mobility, the coordination polymer (CP‐ 2 ) displays a modest conductivity. The conductance in the cis form of the polymer is significantly higher compared to the trans form. Upon exposure to visible light, the cis form undergoes photoisomerization to the trans form with a drastic drop in the electronic mobility. The trans form can be reverted to the cis form thermally or by using UV light. Thus, this system offers a reversible control of the conductivity using light.