Stability testing in an integrated scheme

ISO Guide 35 deals with RM stability issues and scrutinizes the evaluation of stability testing results under the assumption that either there is no trend at all (a rather rare situation), or any observed deterministic change is insignificant and thus can be neglected. However, market demands for reliable reference materials are obviously not limited to stable or at least seemingly stable materials. In many analytical applications, analytes and measurands under consideration are known, or at least suspected, to be unstable on time scales that may vary widely from measurand to measurand. The Federal Institute for Materials Research and Testing (BAM) has developed (and successfully uses) an integrated approach in its certification practice. The approach is based on an initial stability study and subsequent post-certification monitoring. Data evaluation is model-based and takes advantage of all information collected in the stability testing scheme(s). It thus allows one to deal with any kind of instability observed, to assess limiting time intervals at any stress condition in the range tested, to estimate a final expiry date for materials with detected instabilities or the maximum admissible re-testing interval for seemingly stable materials, and to assess maximum admissible stress loads during delivery of the material to the customer. The article describes (and exemplifies) typical study layout, the model selection, and the integrated data assessment.     

Isotopic study of the mechanism of ozone formation

The mechanism of ozone formation has been studied using ¹⁶O and ¹⁸O₂. High-resolution microwave spectroscopy was used to measure the amounts of the isotopomeric ozone species formed. The study is hampered by the very rapid exchange process between the reactants, that tends to scramble the isotopes and hence give a 2:1 statistical ratio between the two possible isotopomers. We have found a strategy to come around this difficulty and conclude that the mechanism is a simple end-on-addition.     

Existence and convergence for quasi‐static evolution in brittle fracture

This paper investigates the mathematical well‐posedness of the variational model of quasi‐static growth for a brittle crack proposed by Francfort and Marigo in [15]. The starting point is a time discretized version of that evolution which results in a sequence of minimization problems of Mumford and Shah type functionals. The natural weak setting is that of special functions of bounded variation, and the main difficulty in showing existence of the time‐continuous quasi‐static growth is to pass to the limit as the time‐discretization step tends to 0. This is performed with the help of a jump transfer theorem which permits, under weak convergence assumptions for a sequence {u_n} of SBV‐functions to its BV‐limit u, to transfer the part of the jump set of any test field that lies in the jump set of u onto that of the converging sequence {u_n}. In particular, it is shown that the notion of minimizer of a Mumford and Shah type functional for its own jump set is stable under weak convergence assumptions. Furthermore, our analysis justifies numerical methods used for computing the time‐continuous quasi‐static evolution. © 2003 Wiley Periodicals, Inc.     

Growth and long-run stability

This paper analyses the implications of persistent growth upon the stability properties of dynamic models. Besides the traditional concept of asymptotic stability, new stability criteria-strong/weak absolute, strong/weak relative, strong/weak logarithmic stability-are introduced, and global stability conditions for satisfying these criteria are stated for general first-order autonomous differential equations. The conflict between rapidity of growth and the degree of stability is demonstrated. Economic applications of the stability theorems are illustrated within the growth models of Harrod and Solow.     

Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.