Electric-Field-Controlled Attenuator for Near IR Laser Radiation

A design of an attenuator for IR laser radiation and the method for its manufacturing are described. The device is based on the electric-field-induced shift of the optical absorption edge of indium selenide crystals. It is shown that InSe with a resistivity of 0,2-200 cm and applied electric field of 10² V/cm reduces the intensity of YAG:Nd⁺³ laser radiation ( = 1,06 m, pulse duration of 10 ns and power of 10 MW) by more than two orders of magnitude. The physical mechanism of the anomalous large shift of the absorption edge is given. The device can also be efficiently used as a cut-off filter for near IR range of spectrum.     

Calculation of Spectroscopic Parameters of Diatomic Molecules with an Open Electron Shell

Russian Physics Journal - The spectroscopic parameters of the BeH and CH molecules with an open electron shell are calculated in the basis of the Slater functions. An analytical expression for the...     

Conversion of Straight-Run Naphtha to C5−C6 Alkanes on Co(Ni)/HZSM–5/SO 4 2- —ZrO2 Composite Catalysts

Russian Journal of Applied Chemistry - The conversion of straight-run naphtha on composite catalytic systems containing HZSM-5 zeolite modified with 0.4 wt % Co or Ni and 15% SZ (10% SO 4 2-...     

Synthesis and Study of 1-Alkenyl-2-propargyloxy-3-aminomethylbenzenes as Acid Corrosion Inhibitors and Antimicrobial Additives to Cutting Fluids

Russian Journal of Applied Chemistry - A series of polyfunctional organic compounds, 1-propenyl- and 1-allyl-2-propargyloxy-3-aminomethylbenzenes containing simultaneously an aminomethyl group and...