Synthesis and Reactions of Some New Pyrrolylfuro[2,3‐d]Pyrimidines and Pyrrolopyrazinofuropyrimidines

5‐Amino‐4‐methyl‐2‐phenyl‐6‐substitutedfuro[2,3‐d]pyrimidines ( 2a‐c ) were reacted with 2,5‐dimethoxytetrahydrfuran to afford the pyrrolyl derivatives 3a‐c . Compound 3a was chosen as intermediate for the synthesis of poly fused heterocycles incorporated furopyrimidines moiety 4–11 . Some of the synthesized compounds were screened for their antibacterial and antifungal activities.     

On the Discrete Hardy Inequality

Necessary and sufficient conditions for the boundedness of thediscrete Hardy operator of the form , from to when 0 < q < 1 <p , is given.     

Pseudoguaiane-type sesquiterpenes and inhibitors on nitric oxide production from Dichrocephala integrifolia

Three new pseudoguaiane-type sesquiterpenes, dichrocepholides A-C, and two new pseudoguaiane-type sesquiterpene dimers, dichrocepholides D and E, were isolated from the aerial part of Dichrocephala integrifolia. Their stereostructures were determined on the basis of chemical and physicochemical evidence. In addition, the extract and its principal sesquiterpene constituent, parthenin, showed an inhibitory activity on nitric oxide (NO) production and on induction of inducible NO synthase.     

Absorption, fluorescence, and semiempirical ASED-MO studies on a typical Brooker''s merocyanine dye

Solvatochromism and Solvatofluorchromism of Brooker's merocyanine 1-methyl-4- (4′-hydroxystyryl) pyridinium betaine, M, were studied in twelve polar protic and aprotic solvents. Moderate hypsochromic fluorescence energy shifts are 4.57 kcal mole⁻¹ while strong hypsochromic absorption energy shifts are 16.63 kcal mole⁻¹. Decreasing of the dipole moment of M upon excitation is the factor, which is responsible for the difference between the two energy shifts. The change of both energies rectilinearly with solvent acidity scale shows the importance of oxygen atom of M as a strong basic center. The application of the atom superposition and electron delocalization molecular orbital (ASED-MO) theory reproduces geometrical and electronic structures for M, which agree well with the experimental observations. The calculations suggest strongly that the dye has a benzenoid valence structure in the ground state and shifts towards a quinonoid one upon excitation with an observed decreasing of the dipole moment. The changing of the dipole moment is explained clearly depending upon the calculated charge distribution over the whole skeleton of the molecule. The formation of a H-bond between the water molecule and the highly negative oxycyclic oxygen atom of M has slightly effect on its dipole moment in the ground state. This leads to suggest that this kind of interaction could be represented as attacking of water with acidic character on the basic site of M. Also, the calculations predict that the formation of monohydrated complex is an exothermic, down hill reaction, which is confirmed from the stabilization of the frontier molecular orbitals, oxygen lone-pair and the HOMO levels.     

Structural,optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

We have studied the structural properties of undoped and Si-doped Al_xGa_1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the Al_xGa_1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A₁(LO) and E₂(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (Φ_B) of undoped and Si-doped Al_xGa_1?xN samples was found to be 0.86 and 0.74 eV, respectively.     

Studies on photoinduced effects in pulse-electrodeposited Ag/Hg-1212/CdSe hetero-nanostructures

Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined. The increase in carrier concentration across the junction due to photo-irradiation has been observed.     

Effect of laser irradiation of C-V characteristics of electrodeposited Ag/Tl-2223/CdSe hetero-nanostructures

One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation, metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction built-in-potential (V _D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied.     

在不同温度下球墨鑄铁的冲击性能

本文描述高温冲击实验的技术,以及由-85℃至1070℃的铸态和锻造后的球墨铸铁的冲击性能。研究结果找到了基体主要为铁素体的球墨铸铁的两个变脆温度范围(-20℃以下和550℃至700℃之间)和一个比较具有韧性的温度范围(850℃与1050℃之间)。在这些温度范围内,曾考查试样的断口情况和断裂时的弯曲角度,并与其基体组织的变化相联系,进行讨论。最后,本文指出研究结果在球墨铸铁的应用上所起的作用,以及在球墨铸铁热加工时对于选择热加工温度的意义。