Ground-state properties of LiV2O4 and Li1-xZnx(V1-yTiy)2O4

We present susceptibility, microwave resistivity, NMR and heat-capacity results for Li_1-xZn_x(V_1-yTi_y)₂O₄ with 0 ? x ? 0.3 and 0 ? y ? 0.3. For all doping levels the susceptibility curves can be fitted with a Curie-Weiss law. The paramagnetic Curie-Weiss temperatures remain negative with an average value close to that of the pure compound Θ≈ - 36 K. Spin-glass anomalies are observed in the susceptibility, heat-capacity and NMR measurements for both type of dopants. From the temperature dependence of the spin-lattice relaxation rate we found critical-dynamic behavior in the Zn doped compounds at the freezing temperatures. For the Ti-doped samples two successive freezing transitions into disordered low-temperature states can be detected. The temperature dependence of the heat capacity for Zn-doped compounds does not resemble that of canonical spin glasses and only a small fraction of the total vanadium entropy is frozen at the spin-glass transitions. For pure LiV₂O₄ the spin-glass transition is completely suppressed. The temperature dependence of the heat capacity for LiV₂O₄ can be described using a nuclear Schottky contribution and the non-Fermi liquid model, appropriate for a system close to a spin-glass quantum critical point. Finally an ( x / y , T )-phase diagram for the low-doping regime is presented. Received 16 March 2001 and Received in final form 30 October 2001     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

Stabilization of needle-crystals by the Gibbs-Thomson effect

We develop a scheme based on pseudo-differential operators to analyze the propagation of excitations in inhomogeneous extended systems. This method is used in a very specific situation, however we think that it has some generality and should apply to various other problems of current interest. We study the well known two-dimensionalsymmetric model of solidification introduced by Langer and Turski. Assuming the existence of Ivantsov-like steady-state solutions, we calculate their excitation spectrum. We show that there are no unstable propagating modes if the Gibbs-Thomson effect is taken into account. This proves that the growth of needle-crystals is stable with respect to side-branching.     

Reconstruction of an acoustically sound-soft obstacle from one incident field and the far-field pattern

The problem considered is that of determining the shape of aplane acoustically sound-soft obstacle from the knowledge ofthe far-field pattern for one time-harmonic incident field.An iterative procedure is proposed based on two boundary integralsrepresenting the incident field and the far-field pattern, respectively.Numerical examples are included which show that the proceduregives accurate numerical approximations in relatively few iterations.     

Thermal Oxidative Stability of Heat-Stabilised Polyamide 66 by Differential Scanning Calorimetry

The thermal stability of heat-stabilised polyamide 66 in an oxidative environment is evaluated by DSC. The oxidative stability of the polyamide decreases as a result of repeated injection moulding. The results also indicate that the presence of glass fibres in the polyamide has a negative influence on the oxidative stability. Both isothermal and dynamic DSC measurements seem to be useful tools for assessing the stability of polyamides and there is a relationship between data determined using both procedures. This revised version was published online in July 2006 with corrections to the Cover Date.     

Determination of myo-inositol in a flow-injection system with co-immobilized enzyme reactors and amperometric detection

A selective and sensitive flow-injection system for the determination of myo-inositol (hexahydroxycyclohexane) is described. Inositol dehydrogenase, IDH, lactate dehydrogenase, LDH, and lactate oxidase, LOD, are co-immobilized on porous glass and used in a packed-bed enzyme reactor. myo-Inositol reacts to produce an equivalent amount of hydrogen peroxide, which oxidizes hexacyanoferrate(II) to hexacyanoferrate(III) in a second reactor containing immobilized peroxidase. The hexacyanoferrate(III) is then detected amperometrically at 0 mV vs. SCE in a flow-through detector. The system responds linearly to injected samples of myo-inositol (25 μl) in the concentration range 1–300 μM. The maximum throughput was 90 samples per hour. The IDH/LDH/LOD reactor was stable for at least 5 weeks.     

Growth of Ni2Si by rapid thermal annealing: Kinetics and moving species

The growth kinetics is characterized and the moving species is identified for the formation of Ni₂Si by Rapid Thermal Annealing (RTA) of sequentially deposited Si and Ni films on a 100 Si substrate. The interfacial Ni₂Si layer grows as the square root of time, indicating that the suicide growth process is diffusion-limited. The activation energy is 1.25±0.2 eV in the RTA temperature range of 350–450° C. The results extend those of conventional steady-state furnace annealing quite fittingly, and a common activation energy of 1.3±0.2 eV is deduced from 225° to 450° C. The marker experiment shows that Ni is the dominant moving species during Ni₂Si formation by RTA, as is the case for furnace annealing. It is concluded that the two annealing techniques induce the same growth mechanisms in Ni₂Si formation.