聚甲基丙烯酸甲酯单分子膜的原子力学显微镜研究

报道了利用原子力显微镜（ＡＦＭ）技术对聚甲基丙烯酸甲酯（ＰＭＭＡ）单分子膜进行分子结构水平的观察研究．由ＡＰＭ图像中得到的ＰＭＭＡ单体所占面积与用π－Ａ曲线中换算出液面上ＰＭＭＡＬａｕｇｍｕｉｒ膜中单体的面积符合得很好．从ＡＦＭ图像中可见ＰＭＭＡＬＢ膜中ＰＭＭＡ的线型碳链是与档板（ｂａｒｒｉｅｒ）平行的紧密排列，与ＬＢ提膜方向相垂直．并由此对ＰＭＭＡＬＢ膜的形成过程进行分析．此外，还观察到了在Ｓｉ基底上ＰＭＭＡ直链的卷绕伸直排列形态，初步分析了其形成原因．     

Met.(Cu,Ag)-TCNQ有机薄膜的EB CL像

自从1979年Potember等人首先发现了CuTCNQ有机薄膜具有受电流控制的电开关特性以来[1]，有关CuTCNQ及AgTCNQ这些阴离子基过渡金属盐（以下简称为Met．（CU、Ag）-TCNQ）有机薄膜的光存储特性、光电开关特性，以及某些气教特性的研究结果便不断报导出来[2-4]，引起人们极大的兴趣．作为很有前途的有机光电功能材料，至今对其电导及光电特性的机理研究仍显得十分薄弱，极大影响了它们进一步向实用器件方向的发展．由于CuTCNQ的晶体参数至今未见报导，我们依据CuTCNQ粉末X射线小角衍射谱对比AgTCNQ相应的粉末X射线衍射数据，…     

电子束在LB抗蚀层及衬底中散射轨迹的Monte—Carlo模拟

研究了高能电子束在ＬＢ膜及多层膜中的输运特性，用Ｍｏｎｔｅ－Ｃａｒｌｏ技术模拟电子在ＬＢ聚甲基丙燃酸甲酯抗蚀层及蒸镀有铬膜的硅衬中的散射轨迹，并讨论了电子束曝光刻蚀应用ＬＢ膜作抗蚀层的优越性。     

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance--voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al_0.3Ga_0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schr?dinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to --3~V, the value of the relative permittivity decreases from 7.184 to 7.093.