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Te-doped GaSb single crystals are studied by measuring Hall effect, infrared(IR) transmission and photoluminescence(PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process. 相似文献
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对HEDPA的合成机理、合成工艺、产品性能及应用进行了一系列的研究,成功地选出了合成HEDPA的最佳工艺,经试验,生产的HEDPA用于医药、染整等行业均有令人满意的效果. 相似文献
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