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弹性体材料在早期退化阶段会出现一些长度不同,且分布不均匀的介观尺度微裂纹,声波在这些裂纹聚集区(或裂纹群)传播会激发较强的非经典非线性。文中以缓变截面的锥棒为研究对象,在Preisach-Mayergoyz (PM)空间模型下研究了声波通过微裂纹聚集区激发的非经典非线性谐波传播特性,实验验证了三次谐波位移幅度与缺陷位置、宽度的反演关系。理论计算和实验结果表明:微裂纹群激发了较强的奇次谐波,引起非经典非线性传播;其谐波幅度与微裂纹聚集区域位置、宽度及非经典非线性参数紧密相关,利用三次或五次谐波位移幅度能够准确定位缺陷的区域。 相似文献
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A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser 下载免费PDF全文
A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current. 相似文献
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在高强度聚焦超声(high intensity focused ultrasound, HIFU) 的研究中, 生物组织的衰减和色散性质会对声能量的空间分布产生影响. 本文提出应用分数导数修正非线性Khokhlov-Zabolotskaya-Kuznetsov (KZK)方程, 研究生物组织中非线性HIFU声场. 对三种生物仿体的衰减和声速色散的理论实验研究表明分数导数应用的可行性, 在此基础上通过数值仿真分析研究了衰减及声速随频率的变化对HIFU焦域分布的影响. 研究结果表明, 在计算强非线性聚焦超声时, 由于高次谐波的强色散作用, 引入分数导数来解决生物组织特殊的衰减以及色散问题可进一步提高HIFU治疗的安全性.
关键词:
分数导数
声衰减
色散
高强度聚焦超声 相似文献
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GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al_2O_3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm~2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer. 相似文献
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垂直腔面发射激光器因其具有低阈值、低功耗、可实现高速调制等优势,广泛地应用于光通信和光互连等领域。寄生电容是影响激光器的调制带宽的主要因素之一。本文通过采用低k值的苯并环丁烯(BCB)平整技术有效地降低了垂直腔面发射激光器的寄生电容。详细研究了BCB平整技术的最优工艺参数,为未来高速垂直腔面发射激光器的制造技术提供参考。低k值BCB平整垂直腔面发射激光器在7 μm氧化孔径下3 dB小信号调制带宽可达15.2 GHz。 相似文献